1.1 W Power Field Effect Transistors (FET) 61

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDT3612	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	90 mJ	3.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.12 ohm	3.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDT458P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.4 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.13 ohm	3.4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
NX3020NAKV,115	NXP Semiconductors	N-CHANNEL		YES	1.1 W						ENHANCEMENT MODE				.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		.2 A			1					e3	30	260
NX3020NAKS,115	NXP Semiconductors	N-CHANNEL		YES	1.1 W						ENHANCEMENT MODE				.18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		.18 A								e3	30	260
FDT458P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.4 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.13 ohm	3.4 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FDN5632N_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.1 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR		1			1.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		1.7 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
FDN5632N-F085	Onsemi	N-CHANNEL	SINGLE	YES	1.1 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR		1			1.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		1.7 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
NTHD3100CT1G	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.08 ohm	2.9 A	DUAL	R-XDSO-C8	1		Not Qualified			e3	30	260
NTHC5513T1G	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.08 ohm	3.1 A	DUAL	R-XDSO-C8	1		Not Qualified			e3	30	260
NX3020NAKVYL	NXP Semiconductors	N-CHANNEL		YES	1.1 W						ENHANCEMENT MODE				.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.2 A
CPC3701CTR	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	DEPLETION MODE	1	1 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		125 Cel	SILICON	110 ns	-55 Cel	200 ns		1 ohm		SINGLE	R-PSSO-F3		DRAIN
ZXMP4A57E6TA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		3.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.08 ohm	2.9 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	78 pF
TPIC5323LD	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	3 A	22.5 mJ	1 A	16	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.09 W	150 Cel	SILICON	80 ns		95 ns		.65 ohm	1 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE, ESD PROTECTED	MS-012AC		NOT SPECIFIED	NOT SPECIFIED	28 pF
TPIC5303D	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	5 A	10.2 mJ	1.4 A	16	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.08 W	150 Cel	SILICON	65 ns		54 ns		.46 ohm	1.4 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified	ESD PROTECTED	MS-012AC		NOT SPECIFIED	NOT SPECIFIED	28 pF
TPIC5421LDW	Texas Instruments	N-CHANNEL	COMPLEX	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	3 A	180 mJ	1.5 A	20	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.125 W	150 Cel	SILICON	92 ns		58 ns		.475 ohm	1 A	DUAL	R-PDSO-G20		ISOLATED	Not Qualified	ESD PROTECTED, LOGIC LEVEL COMPATIBLE	MS-013AC		NOT SPECIFIED	NOT SPECIFIED	125 pF
TPIC5322LD	Texas Instruments	N-CHANNEL	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	3	3 A	40.5 mJ	1 A	16	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.09 W	150 Cel	SILICON	52 ns		66 ns		.525 ohm	1 A	DUAL	R-PDSO-G16		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AC		NOT SPECIFIED	NOT SPECIFIED	40 pF
NTHD3101FT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	13 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.08 ohm	3.2 A	DUAL	R-XDSO-C8	1		Not Qualified			e3	30	260
NTHC5513T1	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.08 ohm	3.1 A	DUAL	R-XDSO-C8	1		Not Qualified			e0		235
NTHD4P02FT1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	9 A		2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	37 ns	-55 Cel	90 ns	TIN LEAD	.155 ohm	2.2 A	DUAL	R-PDSO-F8			Not Qualified			e0		235	50 pF
FTD8007	Onsemi	N-CHANNEL		YES	1.1 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
NTHD3100CT3G	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.08 ohm	2.9 A	DUAL	R-XDSO-C8	1		Not Qualified			e3		260
NTHD4P02FT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	9 A		2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	37 ns	-55 Cel	90 ns	MATTE TIN	.155 ohm	2.2 A	DUAL	R-PDSO-F8	1		Not Qualified			e3	30	260	50 pF
NTHD3100CT1	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.08 ohm	2.9 A	DUAL	R-XDSO-C8			Not Qualified			e0		235
NTGD4161PT1G	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.1 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.16 ohm	1.5 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	40	260
NTHD3100CT3	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.08 ohm	2.9 A	DUAL	R-XDSO-C8	1		Not Qualified			e0		235
HUFA75307T3ST	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			2.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.09 ohm	2.6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
2N7002H	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			1.6 ohm	.36 A	DUAL	R-PDSO-G3				LOGIC LEVEL COMPATIBLE	TO-236AB				4 pF	AEC-Q101; IEC-60134
DT410EL	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.25 ohm	2.1 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT454P	Diodes Incorporated	P-CHANNEL	SINGLE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5.9 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.05 ohm	5.9 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT2955	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		2.5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.3 ohm	2.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT452P	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.035 ohm	3 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT014L	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.16 ohm	2.6 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT455N	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		11.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.015 ohm	11.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified
DT451N	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		7.2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.1 ohm	5.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT3055	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.1 ohm	4 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT452AP	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.065 ohm	5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT453N	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		8 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.028 ohm	8 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT3055L	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		3.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.1 ohm	3.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT014	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.2 ohm	2.7 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified
DT451AN	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		7.2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.035 ohm	7.2 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DT456P	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		7.5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.054 ohm	7.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
ZXMP4A57E6QTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		3.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.08 ohm	2.9 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260	78 pF	AEC-Q101
DMN2451UFDQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	3 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.8 ohm	.96 A	DUAL	S-PDSO-N3		DRAIN							3.1 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMN2451UFDQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	3 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.8 ohm	.96 A	DUAL	S-PDSO-N3		DRAIN							3.1 pF	AEC-Q101; IATF 16949; MIL-STD-202
TPCS8204(TE12L)	Toshiba	N-CHANNEL		YES	1.1 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
TPCS8212(TE12L)	Toshiba	N-CHANNEL		YES	1.1 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
TPC8A01	Toshiba	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	34 A	93.9 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.03 ohm	8.5 A	DUAL	R-PDSO-G8			Not Qualified			e0
TPCS8208(TE12L)	Toshiba	N-CHANNEL		YES	1.1 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		6 A								e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.