1.5 W Power Field Effect Transistors (FET) 320

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
MCH6436-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		6 A			1				e6	30	260
NTD15N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.1 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e0		235
EMH1303-TL-E	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			7 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Bismuth (Sn/Bi)		7 A			1				e6
EMH1401	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					6 A
NTD18N06T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.06 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		e0		235
MCH6445	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					4 A
NTLJF3117PTAG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	.135 ohm	2.3 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified		e3		260
NTD18N06L-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.065 ohm	18 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e0
MCH6440	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					.6 A
MCH6408	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					5 A
NTD18N06-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.06 ohm	18 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		e0
MCH6445-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		4 A			1				e6
FX609	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						2 A
MCH6320-TL-E	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			3.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		3.5 A			1				e6
MCH6421	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					5.5 A
NTD15N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.1 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e3		260
FW513TL	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						DEPLETION MODE	1			.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					.35 A
MCH6436	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					6 A
MCH6421-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1			5.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		5.5 A			1				e6	30	260
EMH1307-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			6.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		6.5 A			1				e6
MCH6336-TL-E	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Bismuth (Sn/Bi)		5 A			1				e6
NTD18N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.065 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e0		235
MCH6431-TL-W	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.055 ohm	5 A	DUAL	R-XDSO-F6	1			ESD PROTECTED	e6	30	260
MCH6445-TL-W	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		4 A			1				e6	30	260
NTD15N06-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.09 ohm	15 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		e3		260
NTD18N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.06 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e0		235
EFC2J004NUZTDG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					BOTTOM	R-PBCC-N6						NOT SPECIFIED	NOT SPECIFIED
MCH6341-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		5 A			1				e6	30	260
MCH6422	Onsemi	N-CHANNEL	SINGLE	NO	1.5 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
MCH6342-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			4.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		4.5 A			1				e6
MCH6341-TL-W	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Bismuth (Sn/Bi)		5 A			1				e6	30	260
MCH6431-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1			5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		5 A			1				e6	30	260
MCH6437	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					7 A
FX611	Onsemi	N-CHANNEL	SINGLE	NO	1.5 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						2 A
NTLJD3115PTAG	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	Tin (Sn)	.135 ohm	2.3 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e3	40	260
FW513	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						DEPLETION MODE	1			.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					.35 A
MCH6337-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			4.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN BISMUTH		4.5 A			1				e6	30	260
MCH6336-TL-W	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.043 ohm	5 A	DUAL	R-XDSO-N6	1			ESD PROTECTED	e6	30	260
NTD15N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.09 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e3		260
FQNL2N50BTA	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1	1.4 A		.35 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	5.3 ohm	.35 A	BOTTOM	O-PBCY-T3			Not Qualified		e3
EMH1405-TL	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			8.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					8.5 A
MCH6406	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					5 A
NTD18N06LT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.065 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e0		235
MCH6336-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Bismuth (Sn/Bi)		5 A			1				e6
MCH6437-TL-W	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED		20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.024 ohm	7 A	DUAL	R-XDSO-F6	1			ESD PROTECTED	e6	30	260
MCH6436-TL-W	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.034 ohm	6 A	DUAL	R-XDSO-F6	1			ESD PROTECTED	e6	30	260
NTD18N06G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.06 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e3		260
NTD18N06LG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A	72 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.065 ohm	18 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.