1.5 W Power Field Effect Transistors (FET) 320

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF7700GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A		8.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.015 ohm	8.6 A	DUAL	R-PDSO-G8	2		Not Qualified	HIGH RELIABILITY	MO-153AA	e3
IRF7705GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.018 ohm	8 A	DUAL	R-PDSO-G8	2		Not Qualified	HIGH RELIABILITY	MO-153AA	e3
BSP171	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	8 mJ	1.6 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	125 Cel	SILICON			.35 ohm	1.7 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
BSP88	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.29 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	6 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
BSP17	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY		50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.8 A	6 mJ	2.9 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.1 ohm	3.2 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	AVALANCHE RATED
IRF7707GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.022 ohm	7 A	DUAL	R-PDSO-G8	2		Not Qualified	HIGH RELIABILITY, ULTRA LOW RESISTANCE	MO-153AA	e3
DMT3020LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	50 A	8.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.02 ohm	16 A	DUAL	R-PDSO-G8	1					e3	30	260	27 pF	MIL-STD-202
DMS2220LFW-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.095 ohm	2.9 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	HIGH RELIABILITY		e4		260
DMS2120LFWB-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.095 ohm	2.9 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	HIGH RELIABILITY		e4	30	260
DMC10H220LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	9 A	.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.22 ohm	1.7 A	DUAL	R-PDSO-G8						e3			12 pF	MIL-STD-202
DMS3015SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0119 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN6070SSDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.087 ohm	2.7 A	DUAL	R-PDSO-G8						e3		260	20 pF	AEC-Q101; MIL-STD-202
DMG2301L-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.12 ohm	3 A	DUAL	R-PDSO-G3						e3		260	45 pF
DMG4710SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A		12.7 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0125 ohm	8.8 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN6022SSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	45 A	24 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.034 ohm	6 A	DUAL	R-PDSO-G8	1					e3	30	260	51 pF	MIL-STD-202
DMN2028UFDH-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	40 A		6.8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.036 ohm	6.8 A	DUAL	R-PDSO-N8	1					e3	30	260		AEC-Q101
SSM6J801R	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0325 ohm	6 A	DUAL	R-PDSO-F6							NOT SPECIFIED	NOT SPECIFIED	99 pF
TPC8223-H(TE12L)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					9 A
TPCS8102	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	46.8 mJ	6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.06 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified	FAST SWITCHING			NOT SPECIFIED	NOT SPECIFIED
SSM6K809R,LXGF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A	19.5 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.036 ohm	6 A	DUAL	R-PDSO-F6									35 pF	AEC-Q101
TPC8221-H(TE12L)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					6 A
TPC8229-H(TE12L)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				3.2 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					3.2 A
TPC8228-H(TE12L)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				3.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					3.8 A
TPC8228-H(TE12L,Q)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				3.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					3.8 A
TPCS8004	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5.2 A	1.05 mJ	1.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.8 ohm	1.3 A	DUAL	R-PDSO-G8			Not Qualified			e0
TPC8229-H(TE12L,Q)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				3.2 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					3.2 A
TPC8207(TE12L)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					6 A
SSM6K809R,LF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A	19.5 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.036 ohm	6 A	DUAL	R-PDSO-F6									35 pF
TPC8223-H(TE12L,Q)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					9 A
TPCS8101	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	46.8 mJ	6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.04 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TPC8208(TE12L)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					5 A
TPC8221-H(TE12L,Q)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					6 A
TPC8227-H(TE12L,Q)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				5.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					5.1 A
TPC8227-H(TE12L)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				5.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					5.1 A
TPC8213-H	Toshiba	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	90 mJ	5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.056 ohm	5 A	DUAL	R-PDSO-G8			Not Qualified			e0
SSM6J801R,LF(T	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0325 ohm	6 A	DUAL	R-PDSO-F6									99 pF
2SK2992(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1 A
2SK2964(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
2SK3471(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					.5 A
2SK2963(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1 A
2SK2992(TE12L,F)	Toshiba	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1 A
RQJ0602EGDQSTL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.2 A		1.5 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.868 ohm	1.5 A	SINGLE	R-PSSO-G3	1	DRAIN	Not Qualified			e6	20	260
UPA2591T1H-T2-AT	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.07 ohm	4 A	DUAL	R-PDSO-F8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
RQK0302GGDQSTL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	5.6 A		3.8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.15 ohm	3.8 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified			e6	20	260
UPA2593T1H-T2-AT	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Pure Tin (Sn)	.103 ohm	4.5 A	DUAL	R-PDSO-F8			Not Qualified
UPA620TT-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					5 A
UPA2593T1H-T1-AT	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.103 ohm	4.5 A	DUAL	R-PDSO-F8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
HAT3021R-EL-E	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20.4 A		2.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.145 ohm	3.4 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.