1.5 W Power Field Effect Transistors (FET) 320

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTD3055-094T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.094 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
DMG2301L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.12 ohm	3 A	DUAL	R-PDSO-G3						e3		260	45 pF
DMHC3025LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	60 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.025 ohm	4.6 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
SI7414DN-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED	SWITCHING	60 V	C BEND	SQUARE	ENHANCEMENT MODE	1	30 A	18 mJ	5.6 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.025 ohm	5.6 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
ECH8695R-TL-W	Onsemi	N-CHANNEL		YES	1.5 W										11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		11 A			1					e6	30	260
BSP89,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR		1			.375 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	7.5 ohm	.375 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDN8601	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	13 mJ	2.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns	-55 Cel	26 ns	MATTE TIN	.109 ohm	2.7 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	5 pF
MCH6342-TL-W	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.073 ohm	4.5 A	DUAL	R-XDSO-F6	1			ESD PROTECTED		e6	30	260
CSD86311W1723	Texas Instruments	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	25 V	BALL	RECTANGULAR	ENHANCEMENT MODE	2	4.5 A		4.5 A	12	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.5 W	150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.051 ohm	4.5 A	BOTTOM	R-PBGA-B12	1		Not Qualified			e1	30	260	13 pF
BSP295	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A		1.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.5 ohm	1.8 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
NTD3055L170T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.17 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
DMN3018SSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	60 A		6.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.022 ohm	6.7 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
QS8M51TR	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	6 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.355 ohm	2 A	DUAL	R-PDSO-F8	1					e2	10	260
RQ7E100ATTCR	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	72 mJ	10 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.0148 ohm	10 A	DUAL	R-PDSO-F8						e3			335 pF
BSP130,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR		1			.3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	8 ohm	.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDN537N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.023 ohm	6.5 A	DUAL	R-PDSO-G3	1					e3	NOT SPECIFIED	NOT SPECIFIED
QS8M13TCR	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.039 ohm	6 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
ZXMS6001N3TA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		550 mJ	1.1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.675 ohm	1.1 A	DUAL	R-PDSO-G4	1	SOURCE	Not Qualified		TO-261AA	e3	30	260
FDN028N20	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	6 mJ	6.1 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns	-55 Cel	39 ns	MATTE TIN	.028 ohm	6.1 A	DUAL	R-PDSO-G3	1					e3	30	260	130 pF
SI6415DQ-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		6.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.019 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
SI7810DN-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	20 A	18 mJ	2.8 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.062 ohm	3.4 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
NTLJD3115PT1G	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.135 ohm	2.3 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
RQJ0304DQDQS#H1	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.6 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.42 ohm	2.6 A	SINGLE	R-PSSO-F3		DRAIN					NOT SPECIFIED	NOT SPECIFIED
MCH6337-TL-E	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			4.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		4.5 A			1					e6
QS8J4TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.056 ohm	4 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
SI7414DN-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			5.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		5.6 A								e0
RQ7L050ATTCR	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	20 A	4.4 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.044 ohm	5 A	DUAL	R-PDSO-F8	1						10	260	135 pF
DMC10H172SSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A	20 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.16 ohm	2 A	DUAL	R-PDSO-G8						e3			20 pF	MIL-STD-202
QS8J1TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.029 ohm	4.5 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
RQ1E070RPTR	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.017 ohm	7 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
QS8K13TCR	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	18 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.039 ohm	6 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
QS8K21TR	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	45 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.075 ohm	4 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
SSM6J801R,LF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0325 ohm	6 A	DUAL	R-PDSO-F6									99 pF
SSM6K809R,LXHF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A	19.5 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.036 ohm	6 A	DUAL	R-PDSO-F6									35 pF	AEC-Q101
ECH8310-TL-H	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A		9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR			SILICON				Tin/Bismuth (Sn/Bi)	.017 ohm	9 A	DUAL	R-PDSO-F8	1					e6	30	260	250 pF
SI7421DN-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	30 A		6.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	155 ns	MATTE TIN	.025 ohm	6.4 A	DUAL	S-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260
CSD75211W1723	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	BALL	RECTANGULAR	ENHANCEMENT MODE	1	4.5 A		4.5 A	12	GRID ARRAY	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.07 ohm	4.5 A	BOTTOM	R-PBGA-B12	1		Not Qualified			e1	30	260
CSD25201W15	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	BALL	SQUARE	ENHANCEMENT MODE	1			4 A	9	GRID ARRAY	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.07 ohm	4 A	BOTTOM	S-PBGA-B9			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
CSD22202W15	Texas Instruments	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.5 W	UNSPECIFIED	SWITCHING	8 V	BALL	SQUARE	ENHANCEMENT MODE	1	48 A		10 A	9	GRID ARRAY	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.0174 ohm	5 A	BOTTOM	S-XBGA-B9	1					e1	30	260	250 pF
MMFT2406T1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.7 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	6 ohm	.7 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified		TO-261AA	e3		260
MMFT2406T1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.7 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	6 ohm	.7 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified		TO-261AA	e0		235
MMFT2406T3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.7 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	6 ohm	.7 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified		TO-261AA	e0		235
MMFT2406T3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			.7 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	6 ohm	.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261AA	e3		260
NTD15N06-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.09 ohm	15 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
NTD15N06LT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.1 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NTD15N06T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.09 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
FDJ1028N	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.2 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.09 ohm	3.2 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e4		260
NTD15N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.09 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.