1.5 W Power Field Effect Transistors (FET) 320

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
NTD32N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	313 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.028 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
ECH8607	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						5 A
ECH8616-TL-E	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				Tin/Bismuth (Sn/Bi)		3 A			1					e6
NTD3055-150T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
FDZ193P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	BALL	RECTANGULAR	ENHANCEMENT MODE	1	15 A		3 A	6	GRID ARRAY	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			TIN SILVER COPPER	.3 ohm	3 A	BOTTOM	R-PBGA-B6	1		Not Qualified			e1	30	260
NTD3055L170	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.17 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
ECH8419-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W							1			9 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				Tin/Bismuth (Sn/Bi)		9 A			1					e6
NTD3055L170-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN	.17 ohm	9 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3		260
NTD32N06L-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	90 A	313 mJ	32 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.028 ohm	32 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0
ECH8622R	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						7 A
NTD3055-094-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN	.094 ohm	12 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTD3055-150-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.15 ohm	9 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e0		235
ECH8659	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	40 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				.024 ohm	7 A	DUAL	R-PDSO-F8									72 pF
ECH8673TL	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	30 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				.085 ohm	3.5 A	DUAL	R-PDSO-F8
ECH8309-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			9.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				TIN BISMUTH		9.5 A			1					e6	30	260
ECH8657-TL	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						4.5 A
ECH8602M	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						6 A
ECH8616	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	20 A		3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				.093 ohm	3 A	DUAL	R-PDSO-F8			Not Qualified
ECH8612	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						7 A
NTD3055-094	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.094 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
ECH8315-TL-H	Onsemi	P-CHANNEL	SINGLE	YES	1.5 W							1			7.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				Tin/Bismuth (Sn/Bi)		7.5 A			1					e6	30	260
ECH8618	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						2 A
NTD32N06LT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	313 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.028 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e0		235
NTD3055L170T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.17 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
ECH8675-TL-H	Onsemi	P-CHANNEL		YES	1.5 W										4.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				TIN BISMUTH		4.5 A			1					e6
BUK481-60A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A		1.6 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	45 ns		.35 ohm	1.6 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						50 pF
BUK581-60AT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A		1.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	65 ns	60 ns		.4 ohm	1.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						50 pF
BUK581-100AT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.6 A	10 mJ	.9 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	65 ns	55 ns		.9 ohm	.9 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE					25 pF
PHN203,118	NXP Semiconductors	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				NICKEL PALLADIUM GOLD					2					e4	30	260
PMPB33XN,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			4.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				TIN		4.3 A			1					e3	30	260
BUK481-100AT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	10 mJ	1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	40 ns		.8 ohm	1 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						25 pF
BUK581-60A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A		1.5 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	65 ns	60 ns		.4 ohm	1.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						50 pF
BUK581-100A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.6 A	10 mJ	.9 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	65 ns	55 ns		.9 ohm	.9 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE					25 pF
BUK481-100A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	10 mJ	1 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	40 ns	MATTE TIN	.8 ohm	1 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e3			25 pF
BUK481-60AT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A		1.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	45 ns		.35 ohm	1.6 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						50 pF
BSP130T/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR		1			.3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			Matte Tin (Sn)	8 ohm	.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	40	260
BSP206	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.7 A		.35 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	8 ns	25 ns		6 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						12 pF
BSP127T/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	270 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	30 ns		8 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						10 pF
BSP127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	270 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	30 ns		8 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						10 pF
BSP107T/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.35 A		.2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	20 ns		28 ohm	.2 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						10 pF
BSP230/T3	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.75 A		.21 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			TIN	17 ohm	.21 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
BSP107	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.35 A		.2 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	20 ns		28 ohm	.2 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						10 pF
BSP130	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			Tin (Sn)	8 ohm	.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
BSP205	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.55 A		.275 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	6 ns	15 ns		10 ohm	.275 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						10 pF
BSP89	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR		1			.375 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			Tin (Sn)	7.5 ohm	.375 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
BSP121	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.2 A		.35 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	20 ns		6 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified						10 pF
BSP126	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.2 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			Tin (Sn)	7 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
IRF7703GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			MATTE TIN	.028 ohm	6 A	DUAL	R-PDSO-G8	2		Not Qualified	HIGH RELIABILITY	MO-153AA	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.