1.5 W Power Field Effect Transistors (FET) 320

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
NTD32N06LT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	313 mJ	32 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.028 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	e0		235
NTD3055L170T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.17 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e0		235
ECH8675-TL-H	Onsemi	P-CHANNEL		YES	1.5 W										4.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				TIN BISMUTH		4.5 A			1				e6
ECH8649	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				7.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						7.5 A
ECH8657	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						4.5 A
NTD3055-150	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.15 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e0		235
ECH8663R	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						8 A
ECH8602M-TL-H	Onsemi	N-CHANNEL		YES	1.5 W										6 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				TIN BISMUTH		6 A			1				e6
ECH8655R	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						9 A
ECH8672-TL-H	Onsemi	P-CHANNEL		YES	1.5 W										3.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				TIN BISMUTH		3.5 A			1				e6
ECH8662	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						6.5 A
NTD3055L170G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN	.17 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e3	30	260
NTD3055-094T4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			Tin/Lead (Sn80Pb20)	.094 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		e0	30	235
ECH8419TL	Onsemi	N-CHANNEL	SINGLE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	35 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A		9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				.017 ohm	9 A	DUAL	R-PDSO-F8
ECH8659-M-TL-H	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				Tin/Bismuth (Sn/Bi)		7 A			1				e6
ECH8606	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						6 A
NTD3055-094G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN	.094 ohm	12 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		e3		260
ECH8649-TL-H	Onsemi	N-CHANNEL		YES	1.5 W										7.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				TIN BISMUTH		7.5 A			1				e6
NTD3055-094-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	45 A	61 mJ	12 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.094 ohm	12 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		e0		235
NTD3055L170-1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A	30 mJ	9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			TIN LEAD	.17 ohm	9 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		e0
ECH8621R	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						8 A
ECH8601R	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						6.5 A
ECH8655R-R-TL-H	Onsemi	N-CHANNEL		YES	1.5 W										9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				Tin/Bismuth (Sn/Bi)		9 A			1				e6	30	260
ECH8659-TL-W	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.5 W	UNSPECIFIED	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	40 A		7 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			TIN BISMUTH	.024 ohm	7 A	DUAL	R-XDSO-F8	1			ESD PROTECTED	e6	30	260
ECH8651R	Onsemi	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel						10 A
BUK481-60A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A		1.6 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	45 ns		.35 ohm	1.6 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					50 pF
BUK581-60AT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A		1.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	65 ns	60 ns		.4 ohm	1.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					50 pF
BUK581-100AT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.6 A	10 mJ	.9 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	65 ns	55 ns		.9 ohm	.9 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE				25 pF
PHN203,118	NXP Semiconductors	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				NICKEL PALLADIUM GOLD					2				e4	30	260
PMPB33XN,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	1.5 W						ENHANCEMENT MODE	1			4.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				TIN		4.3 A			1				e3	30	260
BUK481-100AT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	10 mJ	1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	40 ns		.8 ohm	1 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					25 pF
BUK581-60A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A		1.5 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	65 ns	60 ns		.4 ohm	1.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					50 pF
BUK581-100A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.6 A	10 mJ	.9 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	65 ns	55 ns		.9 ohm	.9 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE				25 pF
BUK481-100A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	10 mJ	1 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	40 ns	MATTE TIN	.8 ohm	1 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified		e3			25 pF
BUK481-60AT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.4 A		1.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	45 ns		.35 ohm	1.6 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					50 pF
BSP130T/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR		1			.3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			Matte Tin (Sn)	8 ohm	.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		e3	40	260
BSP206	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.7 A		.35 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	8 ns	25 ns		6 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					12 pF
BSP127T/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	270 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	30 ns		8 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					10 pF
BSP127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	270 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	30 ns		8 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					10 pF
BSP107T/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.35 A		.2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	20 ns		28 ohm	.2 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					10 pF
BSP230/T3	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.75 A		.21 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			TIN	17 ohm	.21 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		e3	30	260
BSP107	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.35 A		.2 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	20 ns		28 ohm	.2 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					10 pF
BSP130	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			Tin (Sn)	8 ohm	.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		e3	30	260
BSP205	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.55 A		.275 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	6 ns	15 ns		10 ohm	.275 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					10 pF
BSP89	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR		1			.375 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			Tin (Sn)	7.5 ohm	.375 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		e3	30	260
BSP121	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.2 A		.35 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	10 ns	20 ns		6 ohm	.35 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified					10 pF
BSP126	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.2 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			Tin (Sn)	7 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		e3	30	260
BSP171	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	8 mJ	1.6 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	125 Cel	SILICON				.35 ohm	1.7 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.