11 W Power Field Effect Transistors (FET) 21

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFE110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

14 A

7 mJ

3.1 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.69 ohm

3.5 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

SPU01N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

20 mJ

.8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

6 ohm

.8 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-251AA

e3

TSM1NB60CWRPG

Taiwan Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.8 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

10 ohm

.3 A

DUAL

R-PDSO-G4

3

DRAIN

e3

30

260

1 pF

AON7408

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

YES

11 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

IRFE310

Infineon Technologies

N-CHANNEL

SINGLE

YES

11 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

.82 mJ

1.2 A

18

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.6 ohm

1.2 A

QUAD

R-CQCC-N18

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRHE8110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

14 A

68 mJ

3.1 A

18

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.69 ohm

3.5 A

QUAD

R-CQCC-N18

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRFE9110

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

10 A

102 mJ

2.2 A

16

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.38 ohm

2.5 A

QUAD

R-CQCC-N16

SOURCE

Not Qualified

AVALANCHE RATED

e0

IRFE210

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

9 A

20 mJ

1.8 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.25 A

QUAD

R-CQCC-N15

SOURCE

Not Qualified

HIGH RELIABILITY

e0

SPUX7N60S5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

.8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.8 A

SINGLE

R-PSIP-T3

Not Qualified

SPDX7N60S5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.8 A

SINGLE

R-PSSO-G2

Not Qualified

IRFE9210

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5.2 A

72 mJ

1.3 A

18

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.45 ohm

1.3 A

QUAD

R-CQCC-N18

SOURCE

Not Qualified

HIGH RELIABILITY

e0

ISK036N03LM5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

PLASTIC/EPOXY

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

174 A

7 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0046 ohm

44 A

DUAL

S-PDSO-N6

DRAIN

60 pF

ISK024NE2LM5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

PLASTIC/EPOXY

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

221 A

7 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0034 ohm

55 A

DUAL

S-PDSO-N6

DRAIN

e3

70 pF

SPU01N50M2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

.8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.8 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

SPS01N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

20 mJ

.8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.8 A

SINGLE

R-PSIP-T3

3

Not Qualified

AVALANCHE RATED

TO-251AA

SPS01N60C3BT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

20 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

127 ns

6 ohm

.8 A

SINGLE

R-PSIP-T3

AVALANCHE RATED

TO-251

2.5 pF

SPU01N60S5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

20 mJ

.8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.8 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-251AA

e3

SPS01N60C3AT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

20 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

127 ns

6 ohm

.8 A

SINGLE

R-PSIP-T3

AVALANCHE RATED

TO-251

2.5 pF

SPD01N60S5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

20 mJ

.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.8 A

SINGLE

R-PSSO-G2

Not Qualified

AVALANCHE RATED

TO-252AA

e3

SPD01N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

20 mJ

.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

6 ohm

.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-252AA

e3

260

SPD01N50M2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 W

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.8 A

SINGLE

R-PSSO-G2

Not Qualified

AVALANCHE RATED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.