250 W Power Field Effect Transistors (FET) 552

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TK16J55D(F)

Toshiba

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NP160N04TUJ-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

160 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.002 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FS30SM-5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.13 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

H5N5004PL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.11 ohm

50 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

AVALANCHE RATED

e2

NP160N04TUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

250 W

1

160 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

160 A

H5N2513PL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.026 ohm

100 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

PM5050J

Renesas Electronics

NO

250 W

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

50 A

8

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.18 ohm

50 A

UPPER

R-XUFM-X8

Not Qualified

FS30SM-6

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.17 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FS14SM-12

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FS18SM-9

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.33 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NP161N04TUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

160 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0018 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

e3

NP160N04TUJ-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

160 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.002 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP160N055TUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

250 W

1

160 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

160 A

NOT SPECIFIED

NOT SPECIFIED

FS18SM-10

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

54 A

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NP161N04TUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

160 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0018 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

H5N5016PL

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.128 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

H5N5016PL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.128 ohm

50 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

NP160N055TUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

250 W

1

160 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

160 A

NOT SPECIFIED

NOT SPECIFIED

PM4550J

Renesas Electronics

NO

250 W

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

50 A

7

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.18 ohm

50 A

UPPER

R-PUFM-X7

Not Qualified

H5N5004PL

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.11 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e0

NP160N04TUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

250 W

1

160 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

160 A

NOT SPECIFIED

NOT SPECIFIED

2SK1837

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.11 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e0

2SK1526-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.15 ohm

40 A

SINGLE

R-PSFM-T3

1

Not Qualified

e2

2SK1521-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.1 ohm

50 A

SINGLE

R-PSFM-T3

1

Not Qualified

e2

NP109N055PUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

250 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

2SK1527-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.16 ohm

40 A

SINGLE

R-PSFM-T3

1

Not Qualified

e2

2SK1522-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.11 ohm

50 A

SINGLE

R-PSFM-T3

1

Not Qualified

e2

2SK1527

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.16 ohm

40 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

NP109N04PUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

250 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

2SK1836

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

2SK1526

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.15 ohm

40 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

NP109N04PUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

250 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP109N055PUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

250 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

2SK1521

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.1 ohm

50 A

SINGLE

R-PSFM-T3

Not Qualified

e0

2SK1837-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.11 ohm

50 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

e2

IXTM10N80

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

IXTM11N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

METAL

SWITCHING

800 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

44 A

11 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

.95 ohm

11 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

NOT SPECIFIED

NOT SPECIFIED

IXTM40N30

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

METAL

SWITCHING

300 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

160 A

40 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

.088 ohm

40 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

IXTM50N20

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

METAL

SWITCHING

200 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

200 A

50 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

.045 ohm

50 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AE

NOT SPECIFIED

NOT SPECIFIED

IXFZ67N10

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

67 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

67 A

IXFM9N100

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9 A

e0

IXFZ35N30

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

35 A

IXKC25N80C

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

690 mJ

25 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.15 ohm

20 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e1

IXFZ42N20

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

42 A

IXTQ48N20T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.05 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

40 pF

IXFH5N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

300 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.8 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

IXFH15N65

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IXFH17N60

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

17 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

17 A

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.