250 W Power Field Effect Transistors (FET) 552

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IPP80N06S2-07	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0066 ohm	80 A	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3		260
AUIRFS4310ZTRR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	560 A	130 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.006 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3
IRHNS57Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	130 ns		.0035 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							150 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHNS55160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	363 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	125 ns		.012 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							60 pF	MIL-19500; RH - 500K Rad(Si)
IPB011N04NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1260 A	610 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0011 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE		e3		260
IRHNA593064SCS	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	725 mJ	56 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	185 ns	-55 Cel	135 ns		.016 ohm	56 A	DUAL	R-CDSO-N3		DRAIN		HIGH RELIABILITY						RH - 300K Rad(Si)
IRHNA63160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	462 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.01 ohm	56 A	DUAL	R-CDSO-N3		DRAIN							20 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IRHNA597160SCSD	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	188 A	400 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	130 ns	-55 Cel	220 ns		.049 ohm	47 A	DUAL	R-CDSO-N3		DRAIN							115 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
AUIRF6218S	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	210 mJ	27 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.15 ohm	27 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB					AEC-Q101
IRHNS55064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	119 ns		.0056 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							90 pF	MIL-19500; MIL-STD-750; RH - 500K Rad(Si)
IPB120N06S4-H1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	1060 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0021 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRFH5300TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	420 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0021 ohm	40 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260
IPB80N06S2L-06	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0084 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3		245
AUIRF6218STRR	Infineon Technologies	P-CHANNEL	SINGLE	YES	250 W							1			27 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel							27 A
IRHNA6S7264	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	240 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.04 ohm	50 A	DUAL	R-CDSO-N3		DRAIN							10.8 pF	MIL-STD-750; RH - 100K Rad(Si)
IRFH5010TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	227 mJ	13 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.009 ohm	13 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3
IRFBA35N60C	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.08 ohm	35 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-273AA	e3
IRHNA593260PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	134 A	303 mJ	33.5 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	135 ns	-55 Cel	220 ns		.102 ohm	33.5 A	BOTTOM	R-CBCC-N3		DRAIN		HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED		RH - 300K Rad(Si)
IPP80N06S207AKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0066 ohm	80 A	SINGLE	R-PSFM-T3					TO-220AB				215 pF
IRHNS597260	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	134 A	303 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	135 ns	-55 Cel	220 ns		.102 ohm	33.5 A	SINGLE	S-CSSO-G2		DRAIN							86 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHNS597160	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	188 A	400 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	130 ns	-55 Cel	220 ns		.049 ohm	47 A	SINGLE	S-CSSO-G2		DRAIN							115 pF	MIL-19500; RH - 100K Rad(Si)
IRHNS67264	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	200 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.04 ohm	50 A	SINGLE	S-CSSO-G2		DRAIN							10.8 pF	RH - 100K Rad(Si)
IRHNA67260D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	268 mJ	56 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN								RH - 100K Rad(Si)
IRFSL4310ZTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	550 A	130 mJ	127 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.006 ohm	75 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-262AA	e3
IPI120N10S4-03	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	770 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0039 ohm	120 A	SINGLE	R-PSIP-T3		DRAIN			TO-262AA		NOT SPECIFIED	NOT SPECIFIED	300 pF	AEC-Q101
IRHNS57160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	363 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	125 ns		.012 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							60 pF	MIL-19500; RH - 100K Rad(Si)
JANTXVR2N7473U2	Infineon Technologies	N-CHANNEL	SINGLE	YES	250 W	CERAMIC, METAL-SEALED COFIRED		200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	214 A	380 mJ	53.5 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		53.5 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0				MIL-19500/684A
IRF6218STRRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	210 mJ	27 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.15 ohm	27 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRFSL4310ZPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	560 A	130 mJ	127 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.006 ohm	120 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-262AA	e3	40	260
IPI024N06N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	634 mJ	120 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0024 ohm	120 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3	40	260
IRHNS593260	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	134 A	303 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	135 ns	-55 Cel	220 ns		.102 ohm	33.5 A	SINGLE	S-CSSO-G2		DRAIN							86 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IRHNS63160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	462 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.01 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN							20 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IRHNA6S7160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	462 mJ	56 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.01 ohm	56 A	DUAL	R-CDSO-N3		DRAIN		HIGH RELIABILITY						RH - 100K Rad(Si)
IRHNA63264	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	283 mJ	50 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns	TIN LEAD	.018 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0				RH - 300K Rad(Si)
AUIRF6218L	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	210 mJ	27 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.15 ohm	27 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED	TO-262AA					AEC-Q101
IRHNS53Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	130 ns		.0035 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							150 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IPB180N04S4-H0	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	850 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0011 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3		260
IPB180N03S4L-H0	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	980 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.00095 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-263	e3
IPP024N06N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	634 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0024 ohm	120 A	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3
IRHNA57064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	119 ns	TIN LEAD	.0056 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY, RADIATION HARDENED		e0				RH - 100K Rad(Si)
IRHNA593260SCS	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	134 A	303 mJ	33.5 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	135 ns	-55 Cel	220 ns		.102 ohm	33.5 A	BOTTOM	R-CBCC-N3		DRAIN		HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED		MIL-19500
IRHNA597Z60	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	1116 mJ	56 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	180 ns	TIN LEAD	.013 ohm	56 A	DUAL	R-CDSO-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0				RH - 100K Rad(Si)
IRHNA67160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	462 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.01 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRFH5250TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	468 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.00175 ohm	45 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260
IRLH5036TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	286 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0055 ohm	20 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3
IPB80N06S207ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0063 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				215 pF	AEC-Q101
AUIRFS4310Z	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	560 A	130 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.006 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
IPB009N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1260 A	610 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0013 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	TO-263AA	e3		260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.