250 W Power Field Effect Transistors (FET) 552

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
PHP125N06T	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	500 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.008 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	ESD PROTECTED	TO-220AB
PHB174NQ04LT	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	560 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0048 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		245
PHB145NQ06T	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	560 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.006 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		245
PHP174NQ04LT,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	560 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0048 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
PSMN030-150P,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	222 A	300 mJ	55.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.03 ohm	55.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
PSMN030-150P	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	222 A	300 mJ	55.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.03 ohm	55.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
PSMN057-200B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	156 A	300 mJ	39 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.057 ohm	39 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
PSMN057-200P,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	156 A	300 mJ	39 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.057 ohm	39 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
BUK7L06-34ARC,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	PLASTIC/EPOXY	SWITCHING	34 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	590 A	1000 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.006 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
PSMN030-150B,118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	222 A	300 mJ	55.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.03 ohm	55.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
PSMN030-150B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	222 A	300 mJ	55.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.03 ohm	55.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
BUK7L06-34ARC	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	NO	250 W	PLASTIC/EPOXY	SWITCHING	34 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	590 A	1000 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.006 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
PSMN057-200P	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	156 A	300 mJ	39 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.057 ohm	39 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
IRHM53160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.018 ohm	35 A	SINGLE	S-CSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-254AA	e0
IRHM8360U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	400 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	88 A	500 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.25 ohm	22 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRHM8160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	201 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.045 ohm	35 A	SINGLE	R-CSFM-T3			Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRFM360D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	400 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	92 A	980 mJ	23 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.23 ohm	23 A	SINGLE	R-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IST007N04NM6	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1760 A	400 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0007 ohm	440 A	SINGLE	R-PSSO-F5	3	DRAIN				e3			150 pF	IEC-61249-2-21; IEC-68-1
IRHM57264SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	250 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.066 ohm	35 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRFM460U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	500 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	76 A	1200 mJ	19 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.31 ohm	19 A	SINGLE	R-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
JANSR2N7472U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	130 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	280 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0135 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0
IRHLNA73064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	402 mJ	56 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.012 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	FAST SWITCHING		e0
BSPB80N06S2L-06	Infineon Technologies	N-CHANNEL	SINGLE	YES	250 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							80 A
IRHM8160U	Infineon Technologies	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		35 A								e0
IRHM8160D	Infineon Technologies	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		35 A								e0
JANSF2N7585U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	200 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.04 ohm	50 A	SINGLE	S-CSSO-G2		DRAIN	Qualified						10.8 pF	MIL-19500; RH - 300K Rad(Si)
IRHSLNA54Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.004 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
JANSR2N7472U2AA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	130 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	280 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	130 ns		.0135 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							116 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
JANSR2N7468U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	119 ns		.0056 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							90 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHMS593160	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	480 mJ	45 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.05 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRHSNA53064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	370 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0056 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHM9064	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.053 ohm	35 A	SINGLE	S-CSFM-P3			Not Qualified	HIGH RELIABILITY	TO-254AA	e0
IRHSLNA57064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	370 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	125 ns	TIN LEAD	.0061 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED		e0				RH - 100K Rad(Si)
JANSF2N7583U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	268 mJ	56 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN								MIL-19500; RH - 300K Rad(Si)
JANSR2N7467U2	Infineon Technologies	N-CHANNEL	SINGLE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0035 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0
JANSF2N7433	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	250 ns	-55 Cel	330 ns	TIN LEAD	.077 ohm	35 A	SINGLE	S-CSFM-P3			Qualified		TO-254AA	e0			360 pF	MIL-19500/663
IRFM064U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	380 A	620 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.017 ohm	35 A	SINGLE	R-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRHM58064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	1090 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.012 ohm	35 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRHM93160	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.075 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0
BSPP80N06S2L-06	Infineon Technologies	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							80 A
IPI120N10S403AKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	770 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0039 ohm	120 A	SINGLE	R-PSIP-T3		DRAIN			TO-262AA	e3			300 pF	AEC-Q101
JANSR2N7524U2	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	UNSPECIFIED		60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	725 mJ	56 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.016 ohm	56 A	BOTTOM	R-XBCC-N3		DRAIN	Qualified		TO-276AC					MIL-19500
IRHSLNA54064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	370 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0061 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHSNA57064SCSA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	309 mJ	56 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	125 Cel	SILICON	160 ns	-55 Cel	125 ns		.0065 ohm	56 A	BOTTOM	R-XBCC-N3		DRAIN								MIL-19500
IRHM54Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	UNSPECIFIED	SWITCHING	30 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0095 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
JANSH2N7469U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	363 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.012 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500/673
IRHM4160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	201 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.045 ohm	35 A	SINGLE	R-CSFM-T3			Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRHM7Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	30 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.014 ohm	35 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.