250 W Power Field Effect Transistors (FET) 552

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SPI80N06S2-07	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0066 ohm	80 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA
SPP80N04S2-H4	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	660 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.004 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
SP001102598	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	770 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0035 ohm	120 A	SINGLE	R-PSSO-G3		DRAIN			TO-263AB				300 pF	AEC-Q101
SP001557376	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	560 A	475 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.006 ohm	120 A	SINGLE	R-PSSO-G2		DRAIN							220 pF
IPB120N10S4-03	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	770 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0035 ohm	120 A	SINGLE	R-PSSO-G3	1	DRAIN			TO-263AB	e3			300 pF	AEC-Q101
IPB065N06LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0062 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-263AB	e3		245
IPP80N06S2L-06	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0081 ohm	80 A	SINGLE	R-PSFM-T3	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3		260
BUZ100L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	250 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.018 ohm	60 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-220AB	e0
IRHNS63264	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	200 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.04 ohm	50 A	SINGLE	S-CSSO-G2		DRAIN							10.8 pF	RH - 300K Rad(Si)
IRHNS9A3064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	400 A	4000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	179 ns		.004 ohm	100 A	SINGLE	S-CSSO-G2		DRAIN							30 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IPB016N06L3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	634 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0016 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263	e3		260
IRHNS67160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	462 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.01 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN							20 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHNA67264SCSA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	240 mJ	50 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.04 ohm	50 A	DUAL	R-CDSO-N3		DRAIN		HIGH RELIABILITY						RH - 100K Rad(Si)
IPB017N06N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	634 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0017 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified		TO-263	e3	30	260
IRHNA67260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	268 mJ	56 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns	TIN LEAD	.028 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 100K Rad(Si)
IRFH5250TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	468 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.00175 ohm	45 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260
IRHNS597064	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	725 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	185 ns	-55 Cel	135 ns		.016 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN		HIGH RELIABILITY					267 pF	RH - 100K Rad(Si)
IRHNS593064	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	725 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	185 ns	-55 Cel	135 ns		.016 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN		HIGH RELIABILITY					267 pF	RH - 300K Rad(Si)
IRHNS67264SCS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	200 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.04 ohm	50 A	SINGLE	S-CSSO-G2		DRAIN							10.8 pF	RH - 100K Rad(Si)
IPB026N10NF2S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	648 A	430 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.00265 ohm	162 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				49 pF	IEC-61249-2-21
IRHNS63260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	263 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN							13 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IRHNA63164	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	283 mJ	56 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.018 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 300K Rad(Si)
IPP065N06LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0065 ohm	80 A	SINGLE	R-PSFM-T3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-220AB	e3
IRHNS593160	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	188 A	400 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	130 ns	-55 Cel	220 ns		.049 ohm	47 A	SINGLE	S-CSSO-G2		DRAIN							115 pF	MIL-19500; RH - 300K Rad(Si)
IRHNA593Z60	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	1116 mJ	56 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	180 ns	TIN LEAD	.013 ohm	56 A	DUAL	R-CDSO-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0				RH - 300K Rad(Si)
IRHNA67260PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	268 mJ	56 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN					NOT SPECIFIED	NOT SPECIFIED		RH - 100K Rad(Si)
BUZ100	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	250 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.018 ohm	60 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
IPP120N10S403AKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	770 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0039 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB	e3			300 pF	AEC-Q101
IRHNA63260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	268 mJ	56 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN								RH - 300K Rad(Si)
IRHNS67164	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	283 mJ	56 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	205 ns	-55 Cel	120 ns		.018 ohm	49 A	SINGLE	S-CSSO-G2		DRAIN		HIGH RELIABILITY					28 pF	RH - 100K Rad(Si)
IRHNA593064	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	725 mJ	56 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	185 ns	-55 Cel	135 ns	TIN LEAD	.016 ohm	56 A	DUAL	R-CDSO-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0				RH - 300K Rad(Si)
IRHNA597064D	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	725 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	185 ns	-55 Cel	135 ns		.016 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN							267 pF	RH - 100K Rad(Si)
IRHNS55Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	130 ns		.0035 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							150 pF	MIL-19500; MIL-STD-750; RH - 500K Rad(Si)
IPB021N06N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	634 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0021 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
IRHNA6S7160SCS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	462 mJ	56 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.01 ohm	56 A	DUAL	R-CDSO-N3		DRAIN		HIGH RELIABILITY						RH - 100K Rad(Si)
IRHN9230	Infineon Technologies	P-CHANNEL	SINGLE	YES	250 W	CERAMIC, METAL-SEALED COFIRED		200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			35 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.8 ohm	6.4 A	BOTTOM	R-CBCC-N3			Not Qualified	RADIATION HARDENED		e0
IRHNS57163SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	130 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	280 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	130 ns		.0135 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							116 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHNA593260	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	134 A	303 mJ	33.5 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	135 ns	-55 Cel	220 ns	TIN LEAD	.102 ohm	33.5 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0				RH - 300K Rad(Si)
IPB015N04NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	865 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0015 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		245
IPB80N06S2-07	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0063 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3		260
IRHNS593Z60	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	1116 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	180 ns		.013 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN							564 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IRFS4310ZTRRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	560 A	130 mJ	127 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.006 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IRFSL4310TRRZPBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			127 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							127 A
JANTXVR2N7472U2	Infineon Technologies	N-CHANNEL	SINGLE	YES	250 W	CERAMIC, METAL-SEALED COFIRED		130 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	280 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	RADIATION HARDENED		e0				MIL-19500/684A
IRHNS67260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	263 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN							13 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHNS57260SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	214 A	380 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	130 ns		.038 ohm	53.5 A	SINGLE	S-CSSO-G2		DRAIN							65 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRFH6200TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	780 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0015 ohm	45 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3
IPB019N06L3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	634 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0019 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3		245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.