250 W Power Field Effect Transistors (FET) 552

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRHSLNA53Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.004 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHMJ57160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	UNSPECIFIED	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.018 ohm	35 A	SINGLE	R-XSSO-G3		ISOLATED	Not Qualified			e0
IRHM57260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.049 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-254AA	e0
2N7622U2	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	1060 mJ	56 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.015 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHM8260D	Infineon Technologies	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		35 A								e0
BUY15CS57A-01(P)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	UNSPECIFIED		150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	520 mJ	57 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	220 ns	-55 Cel	290 ns		.011 ohm	45 A	BOTTOM	R-XBCC-N3	1	DRAIN							180 pF	EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)
JANSR2N7468U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0056 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0				MIL-19500/673
IRHM4064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.021 ohm	35 A	SINGLE	S-CSFM-P3			Not Qualified		TO-254AA	e0
IRHM7160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	201 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.045 ohm	35 A	SINGLE	R-CSFM-T3			Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRHM7260U	Infineon Technologies	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		35 A								e0
JANSR2N7523U2A	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	1116 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	180 ns		.013 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN							564 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHM54160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	THROUGH-HOLE	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.018 ohm	35 A	SINGLE	S-CSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-254AA	e0
JANSF2N7523U2	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	1116 mJ	56 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	180 ns		.013 ohm	56 A	DUAL	R-CDSO-N3		DRAIN		HIGH RELIABILITY						MIL-19500; RH - 300K Rad(Si)
IRHSLNA57064SCV	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	370 mJ	75 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	125 ns		.0061 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN		RADIATION HARDENED						MIL-19500
JANKCAR2N7391	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SINGLE	YES	250 W	UNSPECIFIED			NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			22 A	3	UNCASED CHIP	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON						22 A	UPPER	R-XUUC-N3	1	DRAIN	Not Qualified	RADIATION HARDENED						MIL-19500/657A
IRHM8360D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	400 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	88 A	500 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.25 ohm	22 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRHSNA57064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	309 mJ	56 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel	SILICON	160 ns	-55 Cel	125 ns	TIN LEAD	.0056 ohm	56 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e0				RH - 100K Rad(Si)
JANSR2N7550U2A	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	188 A	400 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	130 ns	-55 Cel	220 ns		.049 ohm	47 A	SINGLE	S-CSSO-G2		DRAIN	Qualified						115 pF	MIL-19500; RH - 300K Rad(Si)
2N7604U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	402 mJ	56 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.012 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHM7160U	Infineon Technologies	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		35 A								e0
IRHM3260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	250 ns	-55 Cel	330 ns	TIN LEAD	.077 ohm	35 A	SINGLE	S-CSFM-P3			Not Qualified		TO-254AA	e0			360 pF
IRHSLNA53064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	370 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0061 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
JANSR2N7473U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	214 A	380 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	130 ns		.038 ohm	53.5 A	SINGLE	S-CSSO-G2		DRAIN							65 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHSLNA57064SCSD	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	370 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	125 ns		.0061 ohm	75 A	SINGLE	R-XDSO-N3		DRAIN								RH - 100K Rad(Si)
IRHMS597160	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	480 mJ	45 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.05 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRHSLNA57064A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	UNSPECIFIED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	370 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	125 ns		.0061 ohm	75 A	SINGLE	R-XDSO-N3		DRAIN								RH - 100K Rad(Si)
IRFM064D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	380 A	620 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.017 ohm	35 A	SINGLE	R-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
JANSF2N7550U2A	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	188 A	400 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	130 ns	-55 Cel	220 ns		.049 ohm	47 A	SINGLE	S-CSSO-G2		DRAIN							115 pF	MIL-19500; RH - 100K Rad(Si)
JANSF2N7524U2	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	725 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	185 ns	-55 Cel	135 ns		.016 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN							267 pF	MIL-19500; RH - 300K Rad(Si)
IPI70N10SL-16	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	700 mJ	70 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.025 ohm	70 A	SINGLE	R-PSIP-T3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-262AA	e3
IRHM54260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.049 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-254AA	e0
JANSG2N7583U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	263 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN							13 pF	MIL-19500; MIL-STD-750; RH - 500K Rad(Si)
JANSR2N7467U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	130 ns		.0035 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							150 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHM7260D	Infineon Technologies	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		35 A								e0
IRHM58260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.049 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-254AA	e0
JANSF2N7549U2A	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	134 A	303 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	135 ns	-55 Cel	220 ns		.102 ohm	33.5 A	SINGLE	S-CSSO-G2		DRAIN							86 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
JANSF2N7468U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	119 ns		.0056 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							90 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IRFM360U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	400 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	92 A	980 mJ	23 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.23 ohm	23 A	SINGLE	R-MSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
JANSG2N7468U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	119 ns		.0056 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							90 pF	MIL-19500; MIL-STD-750; RH - 500K Rad(Si)
IPI80N06S2-07	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0066 ohm	80 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AA	e3		260
IRFM360	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	400 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	92 A	980 mJ	23 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.23 ohm	23 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0
IRHM58Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	UNSPECIFIED	SWITCHING	30 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0095 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRHM8260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	250 ns	-55 Cel	330 ns	TIN LEAD	.077 ohm	35 A	SINGLE	S-CSFM-P3			Not Qualified	AVALANCHE RATED; RADIATION HARDENED	TO-254AA	e0			360 pF
IRHSNA57Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0035 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRHM9160	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	UNSPECIFIED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.075 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0
BUY15CS57A01ESH4SA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	UNSPECIFIED		150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	520 mJ	57 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	220 ns	-55 Cel	290 ns		.011 ohm	45 A	BOTTOM	R-XBCC-N3		DRAIN					NOT SPECIFIED	NOT SPECIFIED	180 pF	EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)
JANSR2N7579U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	462 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.01 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN							20 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
JANSR2N7581U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	283 mJ	56 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	205 ns	-55 Cel	120 ns		.018 ohm	49 A	SINGLE	S-CSSO-G2		DRAIN		HIGH RELIABILITY					28 pF	MIL-19500; RH - 100K Rad(Si)

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.