250 W Power Field Effect Transistors (FET) 552

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRHNS53160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	363 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	125 ns		.012 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							60 pF	MIL-19500; RH - 300K Rad(Si)
JANTXVR2N7468U2	Infineon Technologies	N-CHANNEL	SINGLE	YES	250 W	CERAMIC, METAL-SEALED COFIRED		60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0				MIL-19500/673
IPB180N10S403ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	530 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0033 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263	e3
IRHNA6S3264	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	240 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.04 ohm	50 A	DUAL	R-CDSO-N3		DRAIN							10.8 pF	MIL-STD-750; RH - 300K Rad(Si)
IPP015N04NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	865 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0015 ohm	120 A	SINGLE	R-PSFM-T3	1		Not Qualified		TO-220AB	e3
IPB120N10S403ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	770 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0035 ohm	120 A	SINGLE	R-PSSO-G3	1	DRAIN			TO-263AB	e3			300 pF	AEC-Q101
IRF6218LPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	210 mJ	27 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.15 ohm	27 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-262AA	e3
JANTXVR2N7467U2	Infineon Technologies	N-CHANNEL	SINGLE	YES	250 W	CERAMIC, METAL-SEALED COFIRED		30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD		75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0				MIL-19500/683A
IPP070N06NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.007 ohm	80 A	SINGLE	R-PSFM-T3	1		Not Qualified	AVALANCHE RATED	TO-220AB	e3
IRFH5250DTR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	470 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0022 ohm	40 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3
IPP120N06S4-H1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	1060 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0024 ohm	120 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB			260
IRLH5036TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	286 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0055 ohm	20 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3
IRHNA57064PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	500 mJ	75 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	119 ns		.0056 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN		HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED		RH - 100K Rad(Si)
IRFH5250DTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	470 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0022 ohm	40 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	40	260
IRHNA6S7260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	268 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	DUAL	R-CDSO-N3		DRAIN							13 pF	MIL-STD-750; RH - 100K Rad(Si)
IPB070N06NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0067 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3
IRHNA593160SCS	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	188 A	400 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	130 ns	-55 Cel	220 ns		.049 ohm	47 A	DUAL	R-CDSO-N3		DRAIN							115 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IPB180N06S4-H1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	700 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0017 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified		TO-263	e3		260
IPI070N06NG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.007 ohm	80 A	SINGLE	R-PSIP-T3	1		Not Qualified	AVALANCHE RATED	TO-262AA	e3
IRHNA6S3160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	462 mJ	56 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.01 ohm	56 A	DUAL	R-CDSO-N3		DRAIN								RH - 300K Rad(Si)
IRHNA6S3260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	268 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	DUAL	R-CDSO-N3		DRAIN							13 pF	MIL-STD-750; RH - 300K Rad(Si)
JANTXVR2N7474U2	Infineon Technologies	N-CHANNEL	SINGLE	YES	250 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							45 A
JANTXVH2N7469U	Infineon Technologies	N-CHANNEL	SINGLE	YES	250 W	UNSPECIFIED		200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	104 A	500 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.1 ohm	26 A	BOTTOM	R-XBCC-N3		DRAIN	Qualified	RADIATION HARDENED						MIL-19500/603E
IRHNS65260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	263 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.028 ohm	56 A	SINGLE	S-CSSO-G2		DRAIN							13 pF	MIL-19500; MIL-STD-750; RH - 500K Rad(Si)
IPB011N04LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1260 A	525 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0014 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE		e3		260
IRHNS57064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	300 A	500 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	119 ns		.0056 ohm	75 A	SINGLE	S-CSSO-G2		DRAIN							90 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IPP120N10S4-03	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	770 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0039 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB	e3			300 pF	AEC-Q101
IRHNS9A7064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	400 A	4000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	179 ns		.004 ohm	100 A	SINGLE	S-CSSO-G2		DRAIN							30 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHNA597064SCVD	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	725 mJ		3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	185 ns	-55 Cel	135 ns		.016 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN							267 pF	RH - 100K Rad(Si)
IRFS4310ZPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	560 A	130 mJ	127 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.006 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
IRHNS63164	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	224 A	283 mJ	56 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	205 ns	-55 Cel	120 ns		.018 ohm	49 A	SINGLE	S-CSSO-G2		DRAIN		HIGH RELIABILITY					28 pF	RH - 300K Rad(Si)
IPB120N10S4-03	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	770 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0035 ohm	120 A	SINGLE	R-PSSO-G3	1	DRAIN			TO-263AB	e3			300 pF	AEC-Q101
IPB065N06LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0062 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-263AB	e3		245
IPP80N06S2L-06	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	530 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0081 ohm	80 A	SINGLE	R-PSFM-T3	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3		260
BUZ100L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	250 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.018 ohm	60 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-220AB	e0
IRHNS63264	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	200 A	240 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	200 ns	-55 Cel	150 ns		.04 ohm	50 A	SINGLE	S-CSSO-G2		DRAIN							10.8 pF	RH - 300K Rad(Si)
IRHNS9A3064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	400 A	4000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	179 ns		.004 ohm	100 A	SINGLE	S-CSSO-G2		DRAIN							30 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
DMTH8001STLW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1080 A	1104 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0017 ohm	270 A	SINGLE	R-PSSO-F8		DRAIN				e3		260	34 pF
TJ100F06M3L(T4L,Q)	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	184 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.0107 ohm	100 A	SINGLE	R-PSSO-G2		DRAIN								AEC-Q101
TJ100F06M3L(TE24L,Q)	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	184 mJ	100 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		SILICON					.0107 ohm	100 A	SINGLE	R-PSSO-G2		DRAIN								AEC-Q101
TJ100F06M3L	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	300 A	184 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.0107 ohm	100 A	SINGLE	R-PSSO-G2		DRAIN								AEC-Q101
2SK3131	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	525 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.11 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
TK16J55D	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	550 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	445 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.37 ohm	16 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK3131(Q)	Toshiba	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							50 A
2SK3132(F)	Toshiba	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							50 A
TK16J55D(Q)	Toshiba	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			16 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							16 A
2SK3132	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	200 A	525 mJ	50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.095 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK3132(Q)	Toshiba	N-CHANNEL	SINGLE	NO	250 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							50 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.