250 W Power Field Effect Transistors (FET) 552

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SIHB35N60E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	691 mJ	32 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	150 ns	-55 Cel	181 ns		.094 ohm	32 A	SINGLE	R-PSSO-G2				AVALANCHE RATED	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	5 pF
AOB10N60L	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE	YES	250 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A
SUP75P05-08	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A		75 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.008 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB	e0
FDA8440	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	500 A	410 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0041 ohm	30 A	SINGLE	R-PSFM-T3			Not Qualified			e3
FDB0260N1007L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1100 A	912 mJ	200 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	94 ns	-55 Cel	115 ns	Matte Tin (Sn) - annealed	.0026 ohm	200 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263CB	e3	30	245	65 pF
FDBL0260N100	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1000 A	866 mJ	200 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	96 ns	-55 Cel	109 ns	Matte Tin (Sn) - annealed	.0026 ohm	200 A	SINGLE	R-PSSO-F2	1	DRAIN			MO-299A	e3	30	245	60 pF
IRHNA67164	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	283 mJ	56 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.018 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0				RH - 100K Rad(Si)
IRHNA67264	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	283 mJ	50 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	200 ns	-55 Cel	150 ns	TIN LEAD	.018 ohm	56 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified	HIGH RELIABILITY		e0				RH - 100K Rad(Si)
JANSR2N7469U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	300 A	363 mJ	75 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.012 ohm	75 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED						MIL-19500/673
STW20N95DK5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	520 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.33 ohm	18 A	SINGLE	R-PSFM-T3		DRAIN			TO-247		NOT SPECIFIED	NOT SPECIFIED	5 pF
APTMC60TLM55CT3AG	Microchip Technology				250 W							1			55 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		125 Cel							55 A									NOT SPECIFIED	NOT SPECIFIED
IPB015N04LGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	865 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0018 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-263AB	e3
IPB015N04NGATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	865 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0015 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
IXFP5N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	300 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	2.8 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e1
JANSR2N7652U2A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	400 A	4000 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	210 ns	-55 Cel	179 ns		.004 ohm	100 A	SINGLE	S-CSSO-G2		DRAIN							30 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
SIHG30N60E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	65 A	690 mJ	29 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	29 A	SINGLE	R-PSFM-T3		DRAIN			TO-247AC		NOT SPECIFIED	NOT SPECIFIED
SIHP25N50E-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	273 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	110 ns	-55 Cel	144 ns		.145 ohm	26 A	SINGLE	R-PSFM-T3					TO-220AB				8 pF
STW40N65M2	STMicroelectronics	N-CHANNEL	SINGLE	NO	250 W							1			32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							32 A									NOT SPECIFIED	NOT SPECIFIED
IRFB13N50APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	560 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.45 ohm	14 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
IRFH6200TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	780 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0015 ohm	45 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
IRLH5030TR2PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	230 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0099 ohm	13 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3
JANSR2N7473U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	214 A	380 mJ	53.5 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.038 ohm	53.5 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	RADIATION HARDENED		e0
JANSR2N7474U2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	222 mJ	45 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.06 ohm	45 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500/684
SIHB24N65E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	250 W							1			24 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel							24 A
STW57N65M5-4	STMicroelectronics	N-CHANNEL	SINGLE	NO	250 W							1			42 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel							42 A									NOT SPECIFIED	NOT SPECIFIED
STH47N60DM6-2AG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	137 A	700 mJ	36 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.08 ohm	36 A	SINGLE	R-PSSO-G2		DRAIN		BULK: 1000			NOT SPECIFIED	NOT SPECIFIED	2 pF	AEC-Q101
IXTH1N250	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		2500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A		1.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	40 ohm	1.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD	e3	10	260
NTBGS001N06C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			363 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.001 ohm	363 A	SINGLE	R-PSSO-G6	1	DRAIN			TO-263CB	e3	30	245	53 pF
MTW32N25E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	600 mJ	32 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.08 ohm	32 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AE	e0		235
IXTH3N150	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY		1500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9 A	250 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	7.3 ohm	3 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247AD	e3	10	260	30 pF
IXTH60N20X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	106 A	350 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.021 ohm	60 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-247				.95 pF
FDB28N30	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	588 mJ	28 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	360 ns	-55 Cel	316 ns		.129 ohm	28 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB		NOT SPECIFIED	NOT SPECIFIED	50 pF
IXTA60N20X4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	106 A	350 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.021 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB	e3	10	260	.95 pF
IXTH75N10	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON				MATTE TIN	.02 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247AD	e3
IXTM10N100	IXYS Corporation	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	1000 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	40 A		10 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON					1.2 ohm	10 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AA
IXTM21N50	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	METAL	SWITCHING	500 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	84 A		21 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	300 W	150 Cel	SILICON					.25 ohm	21 A	BOTTOM	O-MBFM-P2		DRAIN	Not Qualified		TO-204AE		NOT SPECIFIED	NOT SPECIFIED
IXTP48N20T	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	500 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.05 ohm	48 A	SINGLE	R-PSFM-T3		DRAIN		AVALANCHE RATED	TO-220AB				40 pF
IXFH6N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	1200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	300 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0024 ohm	6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-247	e3	10	260
PSMN057-200B,118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	156 A	300 mJ	39 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.057 ohm	39 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
SIHB24N65EFT1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A	691 mJ	24 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	116 ns	-55 Cel	212 ns	Matte Tin (Sn)	.156 ohm	24 A	SINGLE	R-PSSO-G2	1			AVALANCHE RATED	TO-263AB	e3	30	260	4 pF
SIHB30N60E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A	690 mJ	29 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.125 ohm	29 A	SINGLE	R-PSSO-G2	1				TO-263AB	e3	30	260
STB47N60DM6AG	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	137 A	700 mJ	36 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.08 ohm	36 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
STW30N80K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	440 mJ	24 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.18 ohm	24 A	SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED	1.2 pF
MTV10N100E-RL	Onsemi	N-CHANNEL	SINGLE	YES	250 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A
MTV32N25ERL	Onsemi	N-CHANNEL	SINGLE	YES	250 W						ENHANCEMENT MODE	1			32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							32 A
MTW20N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	2000 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN LEAD	.24 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	HIGH VOLTAGE	TO-247AE	e0	30	235
MTW10N100E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	250 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	500 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.3 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	HIGH VOLTAGE	TO-247AE	e0		235
MTV25N50E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	938 mJ	25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.2 ohm	25 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.