4 W Power Field Effect Transistors (FET) 28

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SUD45P03-10-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN OVER NICKEL	.018 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
STL55NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	60 A	150 mJ	55 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	.0115 ohm	15 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified	LOW THRESHOLD		e3
MP4212	Toshiba	N-CHANNEL AND P-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	20 A	129 mJ		10	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR			SILICON				.32 ohm	5 A	SINGLE	R-PSIP-T10		ISOLATED	Not Qualified
BUK113-50DL	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.2 ohm	8 A	SINGLE	R-PSSO-G3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, ESD PROTECTED
PSMN9R0-30KL	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	77 mJ	16 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.013 ohm	16 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA
BSP255	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.3 A		.325 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	4 W	150 Cel	SILICON				17 ohm	.325 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE
JANSF2N7423	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	56 A	500 mJ	14 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	.33 ohm	14 A	SINGLE	S-CSFM-P3			Qualified	AVALANCHE RATED	TO-254AA	e0				MIL-19500/662
JANKCAH2N7394	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SINGLE	YES	4 W	UNSPECIFIED			NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			35 A	3	UNCASED CHIP	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					35 A	UPPER	R-XUUC-N3	1	DRAIN	Qualified	RADIATION HARDENED						MIL-19500/657A
JANSF2N7422	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	88 A	500 mJ	22 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	.085 ohm	22 A	SINGLE	S-CSFM-P3			Qualified	HIGH RELIABILITY	TO-254AA	e0				MIL-19500/662
JANSF2N7423U	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	56 A	500 mJ	14 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	.33 ohm	14 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY		e0				MIL-19500/662
JANSF2N7422U	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	500 mJ	22 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	.085 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY, RADIATION HARDENED		e0				MIL-19500/662
JANSH2N7394	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	4 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	140 A	500 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	.03 ohm	35 A	SINGLE	S-CSFM-P3			Qualified	RADIATION HARDENED	TO-254AA	e0				MIL-19500/663
JANTXVF2N7423U	Infineon Technologies	P-CHANNEL	SINGLE	YES	4 W	CERAMIC, METAL-SEALED COFIRED		200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	56 A	500 mJ	14 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD		14 A	BOTTOM	R-CBCC-N3		ISOLATED	Qualified	RADIATION HARDENED		e0				MIL-19500/662A
S3513	Toshiba	N-CHANNEL		NO	4 W						ENHANCEMENT MODE				3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		3 A								e0
MP4211	Toshiba	P-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	20 A	273 mJ	5 A	10	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.28 ohm	5 A	SINGLE	R-PSIP-T10		ISOLATED	Not Qualified
MP4210	Toshiba	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	20 A	129 mJ	5 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.32 ohm	5 A	SINGLE	R-PSIP-T10			Not Qualified
MP4203	Toshiba	P-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	10 A		5 A	10	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			Tin/Lead (Sn/Pb)	.8 ohm	5 A	SINGLE	R-PSIP-T10			Not Qualified			e0
MP4209	Toshiba	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	4 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	12 A	140 mJ	3 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.45 ohm	3 A	SINGLE	R-PSIP-T10		ISOLATED	Not Qualified
MP4207	Toshiba	N-CHANNEL AND P-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	10 A		5 A	10	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	120 ns	600 ns		.2 ohm	5 A	SINGLE	R-PSIP-T10			Not Qualified				NOT SPECIFIED	240	180 pF
S3514	Toshiba	N-CHANNEL		NO	4 W						ENHANCEMENT MODE				5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel				Tin/Lead (Sn/Pb)		5 A								e0
MP4202	Toshiba	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	10 A		5 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			Tin/Lead (Sn/Pb)	.32 ohm	5 A	SINGLE	R-PSIP-T10			Not Qualified	FAST SWITCHING		e0
MP4201	Toshiba	N-CHANNEL	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	4 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	6 A		3 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			Tin/Lead (Sn/Pb)	.74 ohm	3 A	SINGLE	R-PSIP-T10			Not Qualified	FAST SWITCHING		e0
MP4208	Toshiba	P-CHANNEL	COMMON SOURCE, 4 ELEMENTS WITH BUILT-IN DIODE	NO	4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	10 A		5 A	10	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.5 ohm	5 A	SINGLE	R-PSIP-T10			Not Qualified
UPA1501H	Renesas Electronics	N-CHANNEL	COMPLEX	NO	4 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	12 A		3 A	12	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	.65 ohm	3 A	SINGLE	R-PSIP-T12			Not Qualified			e0
HAT1038R	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.23 ohm	3.5 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA
HAT1038RJ	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.23 ohm	3.5 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA
4AK26	Renesas Electronics	N-CHANNEL		NO	4 W						ENHANCEMENT MODE				10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						10 A
UPA1501H-AZ	Renesas Electronics	N-CHANNEL	COMPLEX	NO	4 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	4	12 A		3 A	12	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.65 ohm	3 A	SINGLE	R-PSIP-T12			Not Qualified				10	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.