41 W Power Field Effect Transistors (FET) 69

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDMC86102LZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	84 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.024 ohm	7 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e4	30	260
DMP2008UFG-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	113 mJ	54 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.008 ohm	14 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260
FDMC86102L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	63 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD	.023 ohm	7 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260
PSMN022-30PL,127	NXP Semiconductors	N-CHANNEL	SINGLE	NO	41 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					Tin (Sn)		30 A								e3
SPA11N80C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	33 A	470 mJ	5.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.45 ohm	11 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
FDPF18N20FT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	324 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.14 ohm	18 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FDMC510P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	37 mJ	18 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	82 ns	-55 Cel	812 ns	NICKEL PALLADIUM GOLD SILVER	.008 ohm	12 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260	1110 pF
FDMC6679AZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	32 A		51 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD	.01 ohm	11.5 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260
FDMC86102	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	72 mJ	29 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM	.024 ohm	7 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified		MO-240BA	e4	30	260
FDMC8462	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	216 mJ	64 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium (Ni/Pd)	.0058 ohm	14 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED
FDMC8651	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A	128 mJ	64 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Nickel/Palladium (Ni/Pd)	.0061 ohm	15 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED
FDMC510P-F106	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	37 mJ	18 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	82 ns	-55 Cel	812 ns	NICKEL PALLADIUM GOLD	.008 ohm	18 A	DUAL	S-PDSO-N5	1	DRAIN				e4	30	260	1110 pF
FDMC510P-T	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	37 mJ	18 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	82 ns	-55 Cel	812 ns		.008 ohm	18 A	DUAL	S-PDSO-N5		DRAIN							1110 pF
DMN10H220LFVW-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	44 A	1.1 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.222 ohm	11 A	DUAL	S-PDSO-N8		DRAIN				e3		260	12 pF
DMT6008LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	25 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0075 ohm	13 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260	57 pF
FDMC7660	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	200 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0022 ohm	20 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified		MO-240BA	e3	30	260
FDMS7678	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	70 A	54 mJ	26 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0055 ohm	17.5 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
DMP2008UFG-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	113 mJ	54 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.008 ohm	14 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260
FDMC8854	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	30 A		15 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.0057 ohm	15 A	DUAL	S-PDSO-F8	1	DRAIN	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED
HUF76009D3ST	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.039 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
AUIRL7732S2TR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	UNSPECIFIED	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	230 A	124 mJ	58 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0066 ohm	14 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified	HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
TJ15S06M3L,LXHQ	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	29 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.063 ohm	15 A	SINGLE	R-PSSO-G2		DRAIN							130 pF	AEC-Q101
DMP2006UFG-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	28 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	370 ns	MATTE TIN	.0055 ohm	17.5 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260	900 pF
FQPF33N10L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	430 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.055 ohm	18 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
AOTF240L	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE	NO	41 W						ENHANCEMENT MODE	1			85 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							85 A
FDMC7660S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	128 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0022 ohm	40 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified		MO-240BA	e3	30	260
FDMC8588DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A	29 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.005 ohm	17 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
FDMS0310AS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	33 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0043 ohm	19 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
NTMFD001N03P9	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	500 A	104 mJ	57 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.001 ohm	165 A	DUAL	R-PDSO-N8	1					e3	30	260	138 pF
FDB3502	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	75 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	54 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.047 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FDMC6683	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	37 mJ	18 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	82 ns	-55 Cel	757 ns	NICKEL PALLADIUM GOLD SILVER	.0083 ohm	18 A	DUAL	S-PDSO-N5	1	DRAIN				e4		260	1095 pF
FDMS8026S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	33 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0043 ohm	19 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
FQPF33N10	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	430 mJ	18 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.052 ohm	18 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
FDMC8554	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	1	36 A		72 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.005 ohm	16.5 A	DUAL	S-PDSO-F8	1	DRAIN	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED
FDMC8678S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	60 A	181 mJ	66 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.0052 ohm	15 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified		MO-240BA	e4	30	260
FDMS8692	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	120 A	72 mJ	48 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.009 ohm	12 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified					260
FDMC8676	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	60 A	216 mJ	18 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.0059 ohm	16 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260
FDMC86324	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	72 mJ	20 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium (Ni/Pd)	.023 ohm	7 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified		MO-240BA	e4	NOT SPECIFIED	NOT SPECIFIED
FQPF15P12	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	1157 mJ	15 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.2 ohm	15 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
PHL13030AL	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	169 A	13 mJ	21 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD	.019 ohm	21 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e4	30	260
PSMN013-30LL,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	41 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							21 A
PSMN022-30BL,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	41 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		30 A			1					e3	30	245
IPG20N04S4-12	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	80 A	80 mJ	20 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0122 ohm	20 A	DUAL	R-PDSO-F8	1		Not Qualified			e3		260
IPA037N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	680 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0037 ohm	75 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IPD50N04S4-10	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	42 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0093 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260
AUIRF7647S2TR	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	UNSPECIFIED	AMPLIFIER	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	95 A	67 mJ	24 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.031 ohm	5.9 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e3	40	260
IPA032N06N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	336 A	235 mJ	84 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0032 ohm	84 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
IPD60R360P7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A	27 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.36 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.