429 W Power Field Effect Transistors (FET) 16

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDBL86062-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		352 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	73 ns	-55 Cel	59 ns	Matte Tin (Sn) - annealed	.002 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN		MO-299A	e3	30	260	29 pF	AEC-Q101
FDBL86062_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		352 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	73 ns	-55 Cel	59 ns	Matte Tin (Sn) - annealed	.002 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN		MO-299A	e3	30	260	29 pF	AEC-Q101
FDBL86361_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		820 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	128 ns	-55 Cel	193 ns	MATTE TIN	.0014 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN		MO-299A	e3	30	260	139 pF	AEC-Q101
FDBL86361-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		820 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	128 ns	-55 Cel	193 ns	MATTE TIN	.0014 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN		MO-299A	e3	30	260	139 pF	AEC-Q101
FDBL0200N100	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		352 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	73 ns	-55 Cel	59 ns	Matte Tin (Sn) - annealed	.002 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN		MO-299A	e3	30	245	41 pF
IPLU300N04S4R8XTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1200 A	750 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	72 ns	-55 Cel	129 ns	TIN	.00077 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN	ULTRA-LOW RESISTANCE		e3			300 pF	AEC-Q101
FDH055N15A	Onsemi	N-CHANNEL	COMPLEX	NO	429 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	668 A	835 mJ	156 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0059 ohm	156 A	SINGLE	R-PSFM-T3			ULTRA-LOW RESISTANCE	TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED
FDBL0150N80	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		820 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	128 ns	-55 Cel	193 ns	Matte Tin (Sn) - annealed	.0014 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN		MO-299A	e3	30	260
PCFA86062F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	UNSPECIFIED		100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1		352 mJ		3	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.002 ohm	315.7 A	UPPER	R-XUUC-N3								29 pF	AEC-Q101
PCFA86361F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	UNSPECIFIED		80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1		819 mJ		2	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0014 ohm	371 A	UPPER	R-XUUC-N2						NOT SPECIFIED	NOT SPECIFIED	139 pF	AEC-Q101
PCFA86561F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	UNSPECIFIED		60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1		1167 mJ		2	UNCASED CHIP		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0011 ohm	441 A	UPPER	R-XUUC-N2						NOT SPECIFIED	NOT SPECIFIED	255 pF	AEC-Q101
NVBL0R5N04XC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		1064 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	221 ns	-55 Cel	215 ns		.00057 ohm	300 A	SINGLE	R-PSSO-F2		DRAIN		MO-299A		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
NVBLS0D5N04M8TXG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		1064 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	221 ns	-55 Cel	215 ns	MATTE TIN	.00057 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN		MO-299A	e3	30	260		AEC-Q101
FDBL9401-F085	Onsemi	N-CHANNEL	SINGLE	YES	429 W							1			300 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		300 A			1				e3	30	260
FDBL9401L-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		913 mJ	300 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	429 W	175 Cel	SILICON	150 ns	-55 Cel	412 ns	MATTE TIN	.00076 ohm	300 A	SINGLE	R-PSSO-F2	1	DRAIN		MO-299A	e3	30	260	509 pF	AEC-Q101
IPLU300N04S4-R8	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	429 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1200 A	750 mJ	300 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	50 ns	-55 Cel	68 ns	TIN	.00077 ohm	300 A	SINGLE	R-PSSO-F8	1	DRAIN	ULTRA-LOW RESISTANCE		e3			300 pF	AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.