Onsemi - NVBL0R5N04XC

NVBL0R5N04XC by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVBL0R5N04XC
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 429 W; Maximum Turn On Time (ton): 221 ns; Case Connection: DRAIN;
Datasheet NVBL0R5N04XC Datasheet
In Stock522
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 221 ns
Maximum Drain Current (ID): 300 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 429 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 215 ns
JESD-30 Code: R-PSSO-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00057 ohm
Avalanche Energy Rating (EAS): 1064 mJ
JEDEC-95 Code: MO-299A
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 300 A
Peak Reflow Temperature (C): NOT SPECIFIED
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