59 W Power Field Effect Transistors (FET) 22

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDMS8090

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

120 A

253 mJ

40 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD SILVER

.013 ohm

10 A

DUAL

R-PDSO-N4

1

DRAIN

e4

30

260

FQPF8N80C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

59 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

850 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.55 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FQPF8N80CYDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

59 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

850 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.55 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

BUK9Y104-100B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

59 W

ENHANCEMENT MODE

1

14.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

14.8 A

1

e3

30

260

RH6G040BGTB1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

380 A

56 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0036 ohm

40 A

DUAL

R-PDSO-F8

DRAIN

85 pF

FDT4N50NZU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

124 mJ

3 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

3 ohm

3 A

DUAL

R-PDSO-G4

1

DRAIN

TO-261AA

40

260

3 pF

FDMS8570SDC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

45 mJ

60 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0028 ohm

28 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

FDMS0306AS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

86 mJ

49 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0024 ohm

26 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

FDMS8023S

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

86 mJ

49 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0024 ohm

26 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

MO-240AA

e3

30

260

FDMD8580

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

482 A

337 mJ

82 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

74 ns

-55 Cel

70 ns

MATTE TIN

.0046 ohm

82 A

DUAL

R-PDSO-N8

1

DRAIN SOURCE

MO-240AA

e3

30

260

38 pF

FDMC7570S

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

120 A

144 mJ

132 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.002 ohm

27 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

MO-240BA

e3

30

260

BUK9Y40-55BT/R

NXP Semiconductors

N-CHANNEL

SINGLE

YES

59 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

18 A

BUK7Y54-75B,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

59 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

86 A

33 mJ

21.4 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.054 ohm

21.4 A

SINGLE

R-PSFM-T4

1

DRAIN

MO-235

e3

30

260

AEC-Q101; IEC-60134

BUK7Y20-30B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

59 W

ENHANCEMENT MODE

1

39.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

39.5 A

1

e3

30

260

BUK9Y40-55B,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

106 A

36 mJ

18 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.04 ohm

26 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

MO-235

e3

30

260

IPL60R285P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

36 A

38 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.285 ohm

SINGLE

S-PSSO-N4

2A

DRAIN

e3

260

IRFH8318TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

160 mJ

50 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0031 ohm

27 A

DUAL

R-PDSO-F5

DRAIN

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

IRFH8318TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

160 mJ

50 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0031 ohm

27 A

DUAL

R-PDSO-F5

1

DRAIN

HIGH RELIABILITY

IRFH8316TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

59 W

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

IRFH8316TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

59 W

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

50 A

1

NP30N06QDK-E2-AY

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

120 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

43 ns

108 ns

.014 ohm

30 A

DUAL

R-PDSO-F8

DRAIN

90 pF

AEC-Q101

NP30N06QDK-E1-AY

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

120 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

43 ns

108 ns

.014 ohm

30 A

DUAL

R-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

90 pF

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.