NO Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STW28NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

430 mJ

21 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.158 ohm

21 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

2SK962

Fuji Electric

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

23 A

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

2 ohm

8 A

SINGLE

R-PSFM-T3

e0

FQU2N100TU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6.4 A

160 mJ

1.6 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

9 ohm

1.6 A

SINGLE

R-PSIP-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

IPP65R110CFDAAKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

99.6 A

845 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.11 ohm

31.2 A

SINGLE

R-PSFM-T3

HIGH RELIABILITY

TO-220AB

e3

AEC-Q101

IRF2804PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1080 A

540 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0023 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-220AB

e3

10

260

IRFP044NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

230 mJ

49 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.02 ohm

53 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-247AC

e3

IRFP260N

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

560 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.04 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AC

e0

IXFN230N10

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

920 A

4000 mJ

230 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.006 ohm

230 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IRFP064PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

300 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

520 A

1000 mJ

70 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.009 ohm

70 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

IXTK140N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

4000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.018 ohm

140 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

JANTXV2N6782

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

14 A

68 mJ

3.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.69 ohm

3.5 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/556

SCT2160KEC

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

55 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.208 ohm

22 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

7 pF

STE48NM50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

192 A

810 mJ

48 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

48 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STP150N10F7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

650 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0042 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

80 pF

AEC-Q101

STW13NK100Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

700 mJ

13.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.7 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

CCB021M12FM3

Wolfspeed

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

6

106 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.0279 ohm

UPPER

R-XUFM-X22

ISOLATED

16 pF

IEC-60747-8-4

IPW65R110CFDAFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

99.6 A

845 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.11 ohm

31.2 A

SINGLE

R-PSFM-T3

HIGH RELIABILITY

TO-247

e3

AEC-Q101

IRFP250MPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

315 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.075 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-247AC

e3

IRFZ24NLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

3.8 W

175 Cel

SILICON

-55 Cel

.07 ohm

17 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

TO-262AA

65 pF

NTD2955-1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

216 mJ

12 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.18 ohm

12 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

30

260

IRFB23N20DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

250 mJ

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.1 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

65 pF

IRFP4227PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

140 mJ

65 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.025 ohm

65 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

TO-247AC

e3

STB24N60M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

180 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

FDPF5N50NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

160 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

4.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FQP4N90C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

570 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.2 ohm

4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPP023N10N5AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

979 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0023 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IPP200N15N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

170 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.02 ohm

50 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP150N10F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

495 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0042 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

67 pF

FQP6N80C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

158 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

680 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

2.5 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPP60R099C6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

796 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.099 ohm

37.9 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FDP8030L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

187 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1500 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0035 ohm

80 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

FQA24N50F

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1100 mJ

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

24 A

SINGLE

R-PSFM-T3

Not Qualified

e3

FQP17P10

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

580 mJ

16.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.19 ohm

16.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FQP85N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

810 mJ

85 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.01 ohm

85 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

CAS300M17BM2

Wolfspeed

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

UPPER

R-XUFM-X7

NOT SPECIFIED

NOT SPECIFIED

IPP023N04NGXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

150 mJ

90 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0023 ohm

90 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRFB31N20DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

124 A

420 mJ

31 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.082 ohm

31 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IXFH10N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

500 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.4 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

IXFH12N100Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.05 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXTH24N50L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

1500 mJ

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.3 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

SPP08P06P

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35.2 A

70 mJ

8.8 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.3 ohm

8.8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

FDA20N50-F109

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

1110 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

FDA20N50_F109

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

1110 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.23 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

e3

IPP65R190CFD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

151 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

57.2 A

484 mJ

17.5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.19 ohm

17.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPP65R190CFDA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

57.2 A

484 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.19 ohm

17.5 A

SINGLE

R-PSFM-T3

HIGH RELIABILITY

TO-220AB

e3

AEC-Q101

IRFB4115GPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

420 A

220 mJ

104 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.011 ohm

104 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IRFB7434PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

294 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1270 A

490 mJ

195 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0016 ohm

195 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFB7546PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

110 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0073 ohm

75 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.