Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17.2 A |
190 mJ |
4.3 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
2.4 ohm |
4.3 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e3 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
1100 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.2 ohm |
24 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
||||||||||||||||||||||||||
Fairchild Semiconductor |
N-CHANNEL |
SINGLE |
NO |
120 W |
ENHANCEMENT MODE |
1 |
33 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Tin/Lead (Sn/Pb) |
33 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1250 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
2000 mJ |
44 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.22 ohm |
44 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e1 |
41 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
208 W |
1 |
20.6 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Matte Tin (Sn) - annealed |
20.6 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
6 ohm |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
17 pF |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
312 W |
PLASTIC/EPOXY |
SWITCHING |
300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
1200 mJ |
38 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.085 ohm |
38 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
121 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
210 A |
990 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
820 ns |
-55 Cel |
470 ns |
.025 ohm |
52.4 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
120 pF |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
48 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.1 ohm |
14 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-251AA |
e3 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
15 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
14 A |
68 mJ |
3.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.69 ohm |
3.5 A |
BOTTOM |
O-MBCY-W3 |
Qualified |
AVALANCHE RATED |
TO-205AF |
e0 |
MIL-19500/556 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
590 mJ |
43 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.042 ohm |
43 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
30 |
250 |
|||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17.2 A |
190 mJ |
4.3 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
2.4 ohm |
4.3 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
135 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
400 mJ |
13 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.55 ohm |
13 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
NO |
25 W |
ENHANCEMENT MODE |
1 |
43 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
43 A |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
59 A |
418 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.19 ohm |
20.2 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
560 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.04 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
TO-247AC |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
41 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
470 mJ |
5.9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.45 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
485 mJ |
80 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.023 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
53 A |
56 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.18 ohm |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
41 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
72 A |
324 mJ |
18 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.14 ohm |
18 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
78 A |
300 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.25 ohm |
26 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247 |
e3 |
10 |
260 |
8 pF |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
190 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
205 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.034 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
176 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
480 mJ |
80 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.01 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
650 A |
519 mJ |
162 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.004 ohm |
75 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
TO-262AA |
e3 |
30 |
260 |
||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
250 A |
5000 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL |
.14 ohm |
53 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
300 W |
1 |
42 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
42 A |
e3 |
|||||||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
780 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0075 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
100 mJ |
50 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) |
.028 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
260 A |
230 mJ |
65 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.01 ohm |
65 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
TO-251AA |
e3 |
30 |
260 |
|||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
400 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.008 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
110 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
370 mJ |
60 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.016 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
78 A |
82 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.12 ohm |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
690 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.22 ohm |
20.7 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
127 mJ |
16 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.1 ohm |
16 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
230 A |
1950 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.045 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
||||||||||||||||||||||||
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
METAL |
SWITCHING |
200 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
120 A |
910 mJ |
2 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 W |
150 Cel |
SILICON |
.085 ohm |
30 A |
BOTTOM |
O-MBFM-P2 |
DRAIN |
Not Qualified |
TO-3 |
300 pF |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
38 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
210 mJ |
28 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.022 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
250 mJ |
3.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
3.7 ohm |
3.5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-247AC |
e3 |
||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
333 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
522 A |
588 mJ |
130 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0075 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
ULTRA-LOW RESISTANCE |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
333 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
522 A |
588 mJ |
130 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0075 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
ULTRA-LOW RESISTANCE |
TO-220AB |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
200 mJ |
59 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.018 ohm |
59 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
TO-220AB |
e3 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
125 A |
171 mJ |
29 A |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
28 ns |
-55 Cel |
54 ns |
Matte Tin (Sn) - annealed |
.11 ohm |
29 A |
SINGLE |
R-PSFM-T4 |
HIGH RELIABILITY |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
10 pF |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
227 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
69 A |
525 mJ |
23 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
101 ns |
-55 Cel |
257 ns |
Matte Tin (Sn) - annealed |
.165 ohm |
23 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
39 W |
1 |
20.6 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Matte Tin (Sn) - annealed |
20.6 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
230 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.077 ohm |
28 A |
SINGLE |
R-PSFM-T3 |
AVALANCHE RATED |
TO-220AB |
120 pF |
|||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 A |
210 mJ |
2.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
3 ohm |
2.5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
30 |
260 |
37 pF |
|||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
27 A |
778 mJ |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.3 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
656 A |
1153 mJ |
164 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0047 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
ULTRA-LOW RESISTANCE |
TO-220AB |
e3 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.