Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
940 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1800 A |
3000 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
NICKEL |
.0013 ohm |
600 A |
UPPER |
R-PUFM-X4 |
1 |
ISOLATED |
AVALANCHE RATED |
10 |
260 |
1470 pF |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
360 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
350 A |
500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0091 ohm |
130 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
95 pF |
||||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
83 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
200 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.12 ohm |
18 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
80 pF |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.11 ohm |
36 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
1.5 ohm |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
24 pF |
|||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
230 W |
PLASTIC/EPOXY |
SWITCHING |
105 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
220 A |
400 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.014 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
90 pF |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
220 A |
2000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.04 ohm |
88 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
1500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.024 ohm |
96 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
700 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
50 A |
1500 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.6 ohm |
22 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
100 pF |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
960 W |
PLASTIC/EPOXY |
AMPLIFIER |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
720 A |
3000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.007 ohm |
240 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
1470 pF |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1250 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1600 A |
3000 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0015 ohm |
600 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
1470 pF |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
450 V |
SOLDER LUG |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
30 A |
15 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.4 ohm |
15 A |
UPPER |
R-PUFM-D15 |
Not Qualified |
||||||||||||||||||||||||||||||
Motorola |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
NO |
42 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
10 A |
12 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.15 ohm |
10 A |
SINGLE |
R-PSFM-T12 |
ISOLATED |
Not Qualified |
COMPLEMENTARY OUTPUTS |
e0 |
||||||||||||||||||||||||
Motorola |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
NO |
42 W |
PLASTIC/EPOXY |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
10 A |
12 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.15 ohm |
10 A |
SINGLE |
R-PSFM-T12 |
ISOLATED |
Not Qualified |
e0 |
|||||||||||||||||||||||||
National Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
12 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
50 W |
175 Cel |
SILICON |
270 ns |
250 ns |
TIN LEAD |
.15 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e0 |
100 pF |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
293 W |
ENHANCEMENT MODE |
1 |
130 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
130 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
475 A |
315 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0068 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
1 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
636 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.13 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
228 A |
1954 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.042 ohm |
76 A |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
68 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
444 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.205 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
150 pF |
||||||||||||||||||||||
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
72 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
25 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.047 ohm |
25 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
MEGAFET |
TO-220AB |
e0 |
||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
750 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
91 A |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
.034 ohm |
56 A |
SINGLE |
R-PSFM-T4 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
9 pF |
|||||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
115 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
.081 ohm |
26 A |
SINGLE |
R-PSFM-T4 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
3 pF |
||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
158 mJ |
3.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
2.2 ohm |
3.5 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
156 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
170 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
.037 ohm |
58 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
6.6 pF |
||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
AMPLIFIER |
160 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
100 W |
150 Cel |
SILICON |
TIN LEAD |
8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
120 W |
PLASTIC/EPOXY |
SWITCHING |
180 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
10 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE |
NO |
120 W |
PLASTIC/EPOXY |
AMPLIFIER |
180 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
10 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
e0 |
|||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE |
NO |
150 W |
PLASTIC/EPOXY |
AMPLIFIER |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
12 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
800 mJ |
20 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.09 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
4 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
3.8 ohm |
4 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 A |
8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1.8 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
e0 |
|||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
1.8 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 W |
SILICON |
TIN LEAD |
1.4 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
10 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.55 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e0 |
||||||||||||||||||||||
Fuji Electric |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
35 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.037 ohm |
35 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
150 W |
PLASTIC/EPOXY |
AMPLIFIER |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
12 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 W |
SILICON |
TIN LEAD |
.45 ohm |
15 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8.4 A |
2.8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
5 ohm |
2.8 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
40 W |
SILICON |
6.4 ohm |
2 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
1054 mJ |
60 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 W |
150 Cel |
SILICON |
.015 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
312 mJ |
8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
40 W |
150 Cel |
SILICON |
.85 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
27 A |
663 mJ |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 W |
150 Cel |
SILICON |
TIN LEAD |
1.4 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
e0 |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
252 mJ |
10 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
45 W |
150 Cel |
SILICON |
1 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
27 A |
413 mJ |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.6 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
15 A |
595 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
2.5 ohm |
5 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
105 A |
204 mJ |
35 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.019 ohm |
35 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 A |
93 mJ |
2 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
4.5 ohm |
2 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e0 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.