NO Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTP32P20T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.13 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

105 pF

PSMN1R1-30PL,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

338 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

IXFB132N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1890 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

330 A

2000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.039 ohm

132 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

12 pF

IXFR120N20

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

3000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0195 ohm

105 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

1000 pF

UL RECOGNIZED

IPP410N30NAKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

176 A

240 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.041 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IRFPS3810PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

441 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

670 A

1350 mJ

14 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.009 ohm

105 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

IXFH96N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

225 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.024 ohm

96 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXFK34N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

560 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

3000 mJ

34 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.24 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264

NOT SPECIFIED

NOT SPECIFIED

IXFP16N50P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

750 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXTH10P60

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

3 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

157 pF

IXTH1N250

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

2500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

1.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

40 ohm

1.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AD

e3

10

260

IXTP120P065T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

65 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.01 ohm

120 A

SINGLE

R-PSFM-T4

DRAIN

AVALANCHE RATED

TO-220AB

505 pF

SCT2120AFC

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

.156 ohm

29 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

TK72E12N1,S1X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

256 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0044 ohm

72 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

30 pF

VMM650-01F

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN THERMISTOR

NO

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

680 A

9

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0018 ohm

680 A

UPPER

R-PUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFK160N30T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1390 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

5000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.019 ohm

160 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

45 pF

IXTH48N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

660 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.065 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

6.4 pF

NTHL045N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

325 W

PLASTIC/EPOXY

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

304 A

64.2 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

Matte Tin (Sn) - annealed

64.2 A

SINGLE

R-PSFM-T3

TO-247

e3

14.53 pF

STD6N80K5

STMicroelectronics

N-CHANNEL

NO

800 V

.0016 ohm

NOT SPECIFIED

NOT SPECIFIED

STP36N55M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.08 ohm

33 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

2SK3667

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

189 mJ

7.5 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

7.5 A

SINGLE

R-PSFM-T3

Not Qualified

IPU95R3K7P7AKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

22 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5 A

2 mJ

2 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

3.7 ohm

2 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IRFSL11N50APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

390 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.55 ohm

11 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IXFH320N10T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1000 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

800 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0035 ohm

320 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

450 pF

IXFK170N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

715 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

2000 mJ

170 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.009 ohm

170 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXTH02N250

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

PLASTIC/EPOXY

2500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

450 ohm

.2 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

10

260

3 pF

IXTH16N10D2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.064 ohm

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e3

10

260

IXTH2R4N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

200 mJ

2.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

2.4 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXTK82N25P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.035 ohm

82 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

NVHL080N120SC1A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

171 mJ

31 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

.11 ohm

31 A

SINGLE

R-PSFM-T3

1

TO-247

e3

30

260

6.5 pF

AEC-Q101

PHP29N08T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

88 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

27 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.05 ohm

27 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

2SK1382

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.029 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK3569

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

363 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.75 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

FDPF16N50UT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38.5 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

610 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.48 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

FQPF11N40C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

44 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

360 mJ

10.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.53 ohm

10.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPP100N06S2L05AKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0059 ohm

100 A

SINGLE

R-PSFM-T3

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP100N08S2L07AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0068 ohm

100 A

SINGLE

R-PSFM-T3

1

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP180N10N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

172 A

50 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.018 ohm

43 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

10

260

IPW60R040CFD7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

212 A

249 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.04 ohm

50 A

SINGLE

R-PSFM-T3

TO-247

e3

IRF710PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

120 mJ

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

3.6 ohm

2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

30

260

IRLB8748PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

370 A

114 mJ

92 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0048 ohm

78 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IXFH24N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

650 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

55 A

1500 mJ

24 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXFK210N30X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1250 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

650 A

3000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0055 ohm

210 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

7.7 pF

IXFK240N25X3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1250 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

600 A

3000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.005 ohm

240 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

1.5 pF

IXFK26N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

1500 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.46 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFK78N50P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1130 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.068 ohm

78 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

5 pF

IXFN36N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

144 A

4000 mJ

36 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.24 ohm

36 A

UPPER

R-PUFM-X4

DRAIN

Not Qualified

AVALANCHE RATED

IXFN48N50U2

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

192 A

48 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.1 ohm

48 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.