NO Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STW32NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

340 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.13 ohm

22 A

SINGLE

R-PSFM-T3

TO-247

e3

STW57N65M5-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

1

42 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

42 A

NOT SPECIFIED

NOT SPECIFIED

SUP85N10-10

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

280 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.0105 ohm

85 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

SUP85N10-10P-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

180 mJ

85 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.01 ohm

85 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

TK40E06N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

67 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

125 A

40 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0104 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

VN10KM

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

1 W

ENHANCEMENT MODE

1

.31 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.31 A

VNP28N04-E

STMicroelectronics

N-CHANNEL

SINGLE

NO

83 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

40 A

e3

2SK1974

ROHM

N-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

FCH104N60F-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

809 mJ

37 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

78 ns

-55 Cel

131 ns

Matte Tin (Sn) - annealed

.104 ohm

37 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FCH104N60F_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

809 mJ

37 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

78 ns

-55 Cel

131 ns

Matte Tin (Sn) - annealed

.104 ohm

37 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FDPF2D3N10C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

888 A

1176 mJ

222 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

2.4 W

175 Cel

SILICON

123 ns

-55 Cel

175 ns

Matte Tin (Sn) - annealed

.0023 ohm

120 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

75 pF

IPP65R190C6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

485 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.19 ohm

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPP65R190CFD7A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

77 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

55 A

64 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.19 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

HIGH RELIABILITY

TO-220AB

e3

AEC-Q101

IRF200P223

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

541 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0115 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-247AC

e3

IRF3709ZLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

79 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

60 mJ

87 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.0063 ohm

42 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-262AA

e3

30

260

IRF820APBF-BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

140 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

3 ohm

2.5 A

SINGLE

R-PSFM-T3

TO-220AB

2.7 pF

IRFBE30

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4.1 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

4.1 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

IRFP150R

Intersil

N-CHANNEL

SINGLE

NO

180 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

40 A

e0

IRL3715LPBF

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

71 W

PLASTIC/EPOXY

SWITCHING

20 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

110 mJ

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.014 ohm

54 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-262AA

e3

30

260

IRL3715PBF

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

71 W

PLASTIC/EPOXY

SWITCHING

20 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

110 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.014 ohm

54 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IRL3715ZLPBF

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

20 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

44 mJ

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.011 ohm

50 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-262AA

e3

30

260

IRL3715ZPBF

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

20 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

44 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.011 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IXFB60N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

5000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.14 ohm

60 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

e1

IXFK44N80P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.19 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFN110N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1500 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

275 A

3000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.056 ohm

90 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

8 pF

UL RECOGNIZED

IXTX60N50L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

960 W

PLASTIC/EPOXY

AMPLIFIER

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

3000 mJ

60 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.1 ohm

60 A

SINGLE

R-PSIP-T3

DRAIN

AVALANCHE RATED

172 pF

RDX045N60FU6

ROHM

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

SCTW90N65G2V

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

110 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON CARBIDE

-55 Cel

MATTE TIN

110 A

SINGLE

R-PSFM-T3

DRAIN

e3

SPI20N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

62.1 A

690 mJ

20.7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

20.7 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED

TO-262AA

SSH22N50A

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

278 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

2151 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.25 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

e3

STP6NK90ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

23.2 A

300 mJ

5.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

5.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-220AB

e3

IPS65R1K0CEAKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

50 mJ

7.2 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1 ohm

7.2 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IXFR36N60P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1500 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.2 ohm

20 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXTK200N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

PLASTIC/EPOXY

AMPLIFIER

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

500 A

5000 mJ

200 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.011 ohm

200 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

610 pF

IRFP1405PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

640 A

1060 mJ

160 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0053 ohm

95 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-247AC

e3

VUM24-05N

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

95 A

8

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

325 W

150 Cel

SILICON

SILVER

.12 ohm

35 A

UPPER

R-XUFM-X8

ISOLATED

Not Qualified

BRIDGE RECTIFIER AVAILABLE

e4

NOT SPECIFIED

NOT SPECIFIED

IXFN140N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

280 A

4000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

NICKEL

.018 ohm

115 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

UL RECOGNIZED

VMO1200-01F

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

1220 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.00125 ohm

1220 A

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRL640A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

63 A

64 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.18 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IXFK48N50

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

192 A

48 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

500 W

150 Cel

SILICON

TIN SILVER COPPER

.1 ohm

48 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264

e1

10

260

IXFN180N25T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

900 W

PLASTIC/EPOXY

SWITCHING

250 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

500 A

5000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0129 ohm

168 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

47 pF

UL RECOGNIZED

IXTN62N50L

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

800 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

150 A

5000 mJ

62 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.1 ohm

62 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

UL RECOGNIZED

RFP70N03

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.01 ohm

70 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

FQPF2N60C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

120 mJ

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.7 ohm

2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IXTH130N20T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

830 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.016 ohm

130 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

122 pF

IRF720PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13 A

190 mJ

3.3 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.8 ohm

3.3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

30

260

IXFH50N60P3

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

125 A

1000 mJ

50 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.16 ohm

50 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

2.5 pF

IXFH52N30Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

208 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

200 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.