NO Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FQP4P40

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

260 mJ

3.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.1 ohm

3.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FQP5N60C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

210 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.5 ohm

4.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FQP8N80C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

850 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

1.55 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FQPF13N50CT

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

860 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.48 ohm

13 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

FQPF2N80

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

180 mJ

1.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

6.3 ohm

1.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

HUF75344G3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

285 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.008 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

HUF75344P3_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

285 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.008 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IPA028N08N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

352 A

1430 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0028 ohm

89 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA032N06N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

336 A

235 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0032 ohm

84 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPA60R099P7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

105 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

TIN

.099 ohm

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA65R110CFDXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34.7 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

99.6 A

845 mJ

31.2 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.11 ohm

31.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPA65R380E6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

215 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPP052N08N5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

84 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0052 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IPP50N10S3L16AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

330 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0209 ohm

50 A

SINGLE

R-PSFM-T3

1

TO-220AB

e3

AEC-Q101

IPP65R150CFD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195.3 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

614 mJ

22.4 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.15 ohm

22.4 A

SINGLE

R-PSFM-T3

TO-220AB

e3

IPP80N06S2L11AKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

280 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0147 ohm

80 A

SINGLE

R-PSFM-T3

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

TO-220AB

e3

IPW65R037C6XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

297 A

2185 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.037 ohm

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

IRF2807PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

340 mJ

82 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

.013 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-220AB

e3

IRF2807ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 A

160 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0094 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRF2907ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

680 A

690 mJ

170 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0045 ohm

160 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRF510A

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

33 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

63 mJ

5.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.4 ohm

5.6 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IRF510L

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.54 ohm

5.6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRF5305LPBF

International Rectifier

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

280 mJ

31 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.06 ohm

31 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

TO-262AA

e3

30

260

IRF630NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

82 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

94 mJ

9.3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.3 ohm

9.3 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e0

IRF640N

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

247 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.15 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

e0

30

225

IRF644

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.28 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

IRF840BPBF-BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

56 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

58 ns

-55 Cel

56 ns

.85 ohm

8.7 A

SINGLE

R-PSFM-T3

TO-220AB

8 pF

IRF9Z24NPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

96 mJ

12 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.175 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFB13N50APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

560 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.45 ohm

14 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

30

260

IRFB3004PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1310 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00175 ohm

195 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IRFB3307ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

140 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0058 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFI540NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

300 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.052 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

e3

40

260

IRFI9540GPBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

600 mJ

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.2 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

30

260

140 pF

IRFPS37N50APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

446 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

144 A

1260 mJ

36 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.13 ohm

36 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

e3

30

260

IRLB8314PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

664 A

180 mJ

171 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0032 ohm

130 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

500 pF

IRLR7821TRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

230 mJ

65 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.01 ohm

65 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

TO-251AA

e3

30

260

IXFH6N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

180 W

150 Cel

SILICON

MATTE TIN

2 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

IXFH75N10

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

MATTE TIN

.02 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

IXFH75N10Q

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1500 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

IXFK170N10

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

560 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

680 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.01 ohm

170 A

SINGLE

R-PSFM-T3

DRAIN

TO-264AA

1200 pF

IXFN120N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

890 W

PLASTIC/EPOXY

SWITCHING

650 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

240 A

3500 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.024 ohm

108 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

5.5 pF

UL RECOGNIZED

IXFN44N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

176 A

4000 mJ

44 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.165 ohm

44 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IXFR140N20P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

4000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.022 ohm

90 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e1

10

260

UL RECOGNIZED

IXFR230N20T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

630 A

5000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.008 ohm

156 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

e1

10

260

60 pF

UL RECOGNIZED

IXTH10N100D2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

695 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.5 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

TO-247AD

e3

10

260

70 pF

IXTH16P60P

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

460 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

2500 mJ

16 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.72 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

60 pF

IXTH30N60L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

540 W

PLASTIC/EPOXY

AMPLIFIER

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

2000 mJ

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.24 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

130 pF

IXTP05N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.25 A

50 mJ

.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

30 ohm

.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.