NO Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FCH067N65S3-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

1160 mJ

44 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.067 ohm

44 A

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

FCH067N65S3_F155

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

1160 mJ

44 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.067 ohm

44 A

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDP61N20

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

244 A

1440 mJ

61 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.041 ohm

61 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FQPF5N60C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

210 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.5 ohm

4.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IRF431

National Semiconductor

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.5 A

e0

IRFB4020PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

AMPLIFIER

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

94 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.1 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFB5615PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

144 W

PLASTIC/EPOXY

AMPLIFIER

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

109 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.039 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NDD60N900U1-1G

Onsemi

N-CHANNEL

SINGLE

NO

74 W

1

5.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5.9 A

3

e3

30

260

SCT3120ALGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

TIN

.156 ohm

21 A

SINGLE

R-PSFM-T3

TO-247

e3

10

265

SIHP12N60E-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

117 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

12 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STW56N60M2-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

350 W

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

NOT SPECIFIED

NOT SPECIFIED

FCA47N60_F109

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

141 A

1800 mJ

47 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

47 A

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IRFP90N20DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

580 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

380 A

1010 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.023 ohm

90 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

STP20NM50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

650 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.25 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

HUF76139P3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

120 ns

-40 Cel

218 ns

.0075 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

IRFP22N50A

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

277 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

1180 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.23 ohm

22 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e0

IRFP4004PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1390 A

290 mJ

350 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0017 ohm

195 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

IRFPG40PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17 A

490 mJ

4.3 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.5 ohm

4.3 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AC

e3

30

260

SPW17N80C3CKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

51 A

670 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.29 ohm

17 A

SINGLE

R-PSFM-T3

AVALANCHE RATED, HIGH VOLTAGE

TO-247

IRF9640

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.5 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

IRFD014PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1.3 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

130 mJ

1.7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.2 ohm

1.7 A

DUAL

R-PDIP-T3

Not Qualified

e3

40

260

IRFP150

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

830 mJ

41 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.055 ohm

41 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

NXH040F120MNF1PG

Onsemi

N-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

74 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

4

90 A

22

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-40 Cel

.056 ohm

30 A

UPPER

R-XUFM-X22

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

12 pF

SPA11N80C3XKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

470 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

SPP06N80C3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

230 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.9 ohm

6 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-220AB

e3

SPP11N80C3XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

470 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

11 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BTS432E

Siemens

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.038 ohm

SINGLE

R-PSFM-T5

Not Qualified

FCH041N60F-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

2025 mJ

76 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

242 ns

-55 Cel

514 ns

.041 ohm

76 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FCH041N60F_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

595 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

2025 mJ

76 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

242 ns

-55 Cel

514 ns

.041 ohm

76 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FDP39N20

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

251 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

156 A

860 mJ

39 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.066 ohm

39 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

TO-220AB

e3

FQPF9P25

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

650 mJ

6 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.62 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

IPI70N10S312AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

410 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0116 ohm

70 A

SINGLE

R-PSIP-T3

TO-262AA

e3

IPP111N15N3GXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

332 A

330 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0111 ohm

83 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

PSMN028-100YS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

137 A

68 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

PURE TIN

.0275 ohm

30 A

SINGLE

R-PSFM-T4

1

DRAIN

Not Qualified

MO-235

SPP08P06PH

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35.2 A

70 mJ

8.8 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.3 ohm

8.8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

SPW35N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

313 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

103.8 A

1500 mJ

34.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.1 ohm

34.6 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-247AA

e3

SSP70N10A

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

188 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

1613 mJ

55 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.023 ohm

55 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

FQU13N06LTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

90 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.145 ohm

11 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251

e3

IMZA120R007M1HXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

NO

750 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

504 A

638 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.0111 ohm

225 A

SINGLE

R-PSFM-T4

TO-247

61 pF

IPW65R080CFD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

391 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

137 A

1160 mJ

43.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.08 ohm

43.3 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IRF1010EZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

340 A

99 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0085 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED, ULTRA-LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFZ34NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

68 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

65 mJ

29 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.04 ohm

29 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IXFK100N65X2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

3500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.03 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-264AA

e1

10

260

2.6 pF

IXFN420N10T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1070 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

1000 A

5000 mJ

420 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

NICKEL

.0023 ohm

420 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IXFP6N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

300 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0024 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IXTP1N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

100 mJ

1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

15 ohm

1 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

MTD3055VL-1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

72 mJ

12 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.18 ohm

12 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED

e0

SCT3060ALGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

97 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

TIN

.078 ohm

39 A

SINGLE

R-PSFM-T3

TO-247

e3

10

265

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.