Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS Corporation |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
NO |
UNSPECIFIED |
SWITCHING |
100 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
7 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0012 ohm |
1000 A |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||||||||||
Sanyo Electric |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
6.5 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.7 ohm |
6.5 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
174 mJ |
60 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN COPPER |
.016 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
1 |
DRAIN |
Not Qualified |
e2 |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
180 mJ |
5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.7 ohm |
5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
|||||||||||||||||||||||||
|
Alpha & Omega Semiconductor |
N-CHANNEL |
SINGLE |
NO |
83 W |
ENHANCEMENT MODE |
1 |
4 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
4 A |
||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
1200 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.15 ohm |
45 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-264AA |
e3 |
||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
70 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.18 ohm |
13 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
|||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
349 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Tin (Sn) |
120 A |
e3 |
||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
120 mJ |
5.8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.6 ohm |
5.5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
95 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
55 mJ |
6 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.036 ohm |
6 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
35 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
39.1 ns |
-40 Cel |
92.6 ns |
.00563 ohm |
200 A |
UPPER |
R-XUFM-X35 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
112 pF |
UL RECOGNIZED |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
360 A |
1360 mJ |
90 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.016 ohm |
90 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
220 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
1124 mJ |
45 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.04 ohm |
45 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
175 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
390 A |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.008 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
45 A |
43 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.28 ohm |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
13 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.9 ohm |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
120 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
900 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0041 ohm |
120 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
TO-262AA |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
340 mJ |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0045 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
79 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
43 mJ |
50 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0084 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e3 |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
43 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0093 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
AVALANCHE RATED |
TO-220AB |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
129 A |
151 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.07 ohm |
31 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
89 A |
636 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.125 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
18 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.1 A |
18 mJ |
1.7 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
3 ohm |
1.7 A |
SINGLE |
R-PSIP-T3 |
TO-251AA |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
267 A |
1954 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.041 ohm |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
83 A |
97 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.099 ohm |
22 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
e3 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
34 A |
34 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
TIN |
.36 ohm |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
e3 |
|||||||||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
550 A |
980 mJ |
130 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.007 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
51 mJ |
.37 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
3 ohm |
.37 A |
DUAL |
R-PDIP-T3 |
DRAIN |
Not Qualified |
e3 |
40 |
260 |
|||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
44 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
170 A |
520 mJ |
44 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.06 ohm |
44 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE |
NO |
180 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
84 A |
960 mJ |
21 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.2 ohm |
21 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247AC |
e0 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
43 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
46 mJ |
5 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.6 ohm |
5 A |
SINGLE |
R-PSIP-T3 |
1 |
DRAIN |
Not Qualified |
TO-251AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
64.1 mJ |
17 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.1 ohm |
17 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
250 A |
2500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.033 ohm |
102 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-264AA |
e1 |
10 |
260 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1000 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
168 A |
2000 mJ |
56 A |
4 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL |
.135 ohm |
56 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
UL RECOGNIZED |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
700 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
4000 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.075 ohm |
60 A |
UPPER |
R-PUFM-X4 |
DRAIN |
AVALANCHE RATED |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
780 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
5000 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.065 ohm |
63 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
115 pF |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
700 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
4.5 ohm |
3 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
25 pF |
||||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
30 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.055 ohm |
50 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
733 pF |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
520 W |
PLASTIC/EPOXY |
AMPLIFIER |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
340 A |
2500 mJ |
80 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.032 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
520 pF |
|||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
110 W |
PLASTIC/EPOXY |
SWITCHING |
1500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
350 mJ |
2.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
6 ohm |
2.5 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
AVALANCHE RATED |
TO-247 |
UL RECOGNIZED |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
42 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.8 A |
80 mJ |
.8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
20 ohm |
.8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e1 |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
63 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
100 mJ |
1.4 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
11 ohm |
1.4 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e1 |
|||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
86 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 A |
150 mJ |
2 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
7.5 ohm |
2 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e1 |
|||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
890 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
270 A |
3500 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.044 ohm |
90 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
250 pF |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
METAL |
SWITCHING |
400 V |
PIN/PEG |
ROUND |
ENHANCEMENT MODE |
1 |
56 A |
11.3 mJ |
14 A |
2 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.4 ohm |
14 A |
BOTTOM |
O-MBFM-P2 |
DRAIN |
Qualified |
HIGH RELIABILITY |
TO-204 |
e0 |
MIL-19500/543 |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
45 A |
61 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.104 ohm |
12 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
e0 |
235 |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
240 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
69 A |
380 mJ |
30 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.11 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
86 W |
ENHANCEMENT MODE |
1 |
32 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Tin (Sn) |
32 A |
e3 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.