Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
88 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
30 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.05 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e0 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
56 A |
2500 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.95 ohm |
14 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-247AD |
e3 |
10 |
260 |
|||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
1500 mJ |
20 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.35 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-247AD |
e3 |
||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
560 W |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
3000 mJ |
24 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.39 ohm |
24 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-264AA |
e1 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1090 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
630 A |
5000 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0075 ohm |
220 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
AVALANCHE RATED |
60 pF |
UL RECOGNIZED |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
695 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
700 A |
3500 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.0035 ohm |
300 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
AVALANCHE RATED |
3.2 pF |
UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
330 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
300 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.36 ohm |
16 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-220AB |
7 pF |
||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1250 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
3500 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.024 ohm |
120 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
TO-247AD |
5.5 pF |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1250 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
600 A |
3000 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.005 ohm |
240 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
1.5 pF |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
22 A |
2 mJ |
5.5 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.42 ohm |
5.5 A |
BOTTOM |
O-MBCY-W3 |
DRAIN |
Qualified |
HIGH RELIABILITY |
TO-205AF |
e0 |
MIL-19500/557 |
|||||||||||||||||||
National Semiconductor |
N-CHANNEL |
SINGLE |
NO |
250 W |
ENHANCEMENT MODE |
1 |
15 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
15 A |
e0 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
119 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
69 A |
128 mJ |
17 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
Matte Tin (Sn) - annealed |
.224 ohm |
17 A |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
|||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
326 W |
ENHANCEMENT MODE |
1 |
150 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
150 A |
||||||||||||||||||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
636 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.13 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
1 |
ISOLATED |
TO-220AB |
10 |
260 |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
70 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.014 ohm |
70 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
34 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
45 A |
460 mJ |
15 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.28 ohm |
15 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
156 W |
PLASTIC/EPOXY |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
470 mJ |
11 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.45 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
610 mJ |
20 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.165 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
85 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28 A |
110 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.68 ohm |
7 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
BULK: 2500 |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
.9 pF |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
72 A |
180 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.19 ohm |
18 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
720 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
.0027 ohm |
180 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
220 mJ |
8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.3 ohm |
8 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
UNSPECIFIED |
SWITCHING |
500 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
130 A |
8 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
595 W |
150 Cel |
SILICON |
SILVER |
.12 ohm |
47 A |
UPPER |
R-XUFM-X8 |
ISOLATED |
Not Qualified |
BRIDGE RECTIFIER AVAILABLE |
e4 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
40 W |
ENHANCEMENT MODE |
1 |
3.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
3.5 A |
||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
120 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
20 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN COPPER |
.27 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
1 |
DRAIN |
Not Qualified |
e2 |
|||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
1000 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
44 A |
1210 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
1 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247 |
e1 |
|||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
250 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
110 A |
55 A |
12 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON CARBIDE |
-40 Cel |
.049 ohm |
55 A |
UPPER |
R-XUFM-X12 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
700 mJ |
80 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.008 ohm |
80 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e0 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
54 A |
200 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.2 ohm |
13.5 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
e3 |
|||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
375 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
236 A |
832 mJ |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0028 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
e3 |
55 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
35.7 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33 A |
339 mJ |
11 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.4 ohm |
11 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
625 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
1868 mJ |
45 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.12 ohm |
45 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AD |
e3 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
208 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
300 A |
309 mJ |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.009 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
42 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
100 mJ |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.8 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
38 A |
700 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.73 ohm |
9.5 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
210 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
182.4 A |
650 mJ |
45.6 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.042 ohm |
45.6 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
860 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.48 ohm |
13 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
167 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
150 mJ |
90 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0023 ohm |
90 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
110 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.0029 ohm |
24 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
208 W |
PLASTIC/EPOXY |
SWITCHING |
900 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
34 A |
678 mJ |
15 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.34 ohm |
15 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
56 A |
250 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.2 ohm |
14 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
AVALANCHE RATED |
TO-262AA |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
670 A |
170 mJ |
170 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0041 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
METAL |
SWITCHING |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
25 A |
92 mJ |
6.5 A |
3 |
CYLINDRICAL |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN LEAD |
.345 ohm |
6.5 A |
BOTTOM |
O-MBCY-W3 |
Not Qualified |
TO-205AF |
e0 |
|||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE |
NO |
150 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
790 mJ |
12 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.5 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247AC |
e0 |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
540 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
1000 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.1 ohm |
34 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
AVALANCHE RATED |
TO-247 |
e3 |
10 |
260 |
2 pF |
||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
700 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
720 A |
4000 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.0125 ohm |
180 A |
UPPER |
R-PUFM-X4 |
ISOLATED |
AVALANCHE RATED |
600 pF |
UL RECOGNIZED |
|||||||||||||||||||||||
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
36 W |
PLASTIC/EPOXY |
SWITCHING |
300 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
700 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.027 ohm |
56 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
AVALANCHE RATED |
TO-220AB |
3 pF |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
192 A |
2500 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.1 ohm |
48 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e1 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.