YES Power Field Effect Transistors (FET) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDS8984	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	32 mJ	7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.032 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF7309TRPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.05 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
NDT3055	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
SI7288DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	15.6 W	UNSPECIFIED	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	50 A	5 mJ	20 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.019 ohm	10 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	40	260
IRLML6401GTRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A	33 mJ	4.3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	43 ns	-55 Cel	460 ns		.05 ohm	4.3 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY	TO-236AB				125 pF
IRFL9014PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	140 mJ	1.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.5 ohm		SINGLE	R-PSSO-G3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-261AA	e3	30	260
CSD18543Q3A	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	156 A	55 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0156 ohm	12 A	DUAL	R-PDSO-F5	1	DRAIN		AVALANCHE RATED		e3	30	260	6.2 pF
FDT439N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6.3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	6.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
SIRA01DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	31.2 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	42 ns	-55 Cel	98 ns		.0049 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	70 pF
SQ2362ES-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	7 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	40 ns	-55 Cel	51 ns	Matte Tin (Sn)	.068 ohm	4.3 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	26 pF	AEC-Q101
IRF640SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	130 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	580 mJ	18 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.18 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e3	40	260
FQD5P20TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14.8 A	330 mJ	3.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.4 ohm	3.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
2N7002PV,115	NXP Semiconductors	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE				.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			-55 Cel		TIN		.35 A			1					e3	30	260
SI4946BEY-T1-E3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.7 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	7.2 mJ	6.5 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	35 ns	-55 Cel	55 ns	MATTE TIN	.041 ohm	6.5 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260	44 pF
IRF1010NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	170 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	290 A	250 mJ	84 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN OVER NICKEL	.011 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	TO-252	e3	30	260
SI7157DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	300 A	61.25 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.0016 ohm	60 A	DUAL	R-PDSO-C5	1	DRAIN				e3	30	260
SI7469ADP-T1-RE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	73.5 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	125 A	80 mJ	46 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	46 ns	-55 Cel	82 ns	MATTE TIN	.027 ohm	46 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	37 pF
FQB47P06TM-AM002	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	188 A	820 mJ	47 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.026 ohm	47 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
FQB47P06TM_AM002	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	188 A	820 mJ	47 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.026 ohm	47 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
G2R1000MT17J	Genesic Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	44 W	PLASTIC/EPOXY	SWITCHING	1700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	45 mJ		7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel			1.25 ohm	5 A	SINGLE	R-PSSO-G7		DRAIN			TO-263				5 pF	IEC-60747-8-4
G3R450MT17J	Genesic Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	71 W	PLASTIC/EPOXY	SWITCHING	1700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	59 mJ		7	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON CARBIDE		-55 Cel			.63 ohm	8 A	SINGLE	R-PSSO-G7		DRAIN			TO-263				1.5 pF	IEC-60747-8-4
TN2510N8-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	5 A			3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	20 ns	-55 Cel	30 ns	MATTE TIN	2 ohm	.73 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD	TO-243AA	e3	40	260	25 pF
STN1NK80Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A	50 mJ	.25 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	16 ohm	.25 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260	6.7 pF
SQJ469EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	128 A	101 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.025 ohm	32 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified			e3		260
BSP129H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	1.4 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	20 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN				e3				AEC-Q101
IRF540STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	230 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				PURE MATTE TIN	.077 ohm	28 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB		30	260
2N7002BKMB,315	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.715 W						ENHANCEMENT MODE	1			.45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			-55 Cel		TIN		.45 A			1					e3	30	260
FDS8949_F085	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	26 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.029 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDS8949-F085	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	26 mJ	6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.029 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified				30	260
AO4490L	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.8 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.8 W	150 Cel	SILICON		-55 Cel			.0072 ohm	16 A	DUAL	R-PDSO-G8									238 pF
IPT059N15N3ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	620 A	520 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0059 ohm	155 A	SINGLE	R-PSSO-F2	1	DRAIN				e3
PMV40UN2R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4.4 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Tin (Sn)	.044 ohm	3.7 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	35 pF	IEC-60134
FDB44N25TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	307 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	176 A	2055 mJ	44 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	930 ns	-55 Cel	420 ns	MATTE TIN	.069 ohm	44 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245	90 pF
BSZ086P03NS3EGATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	105 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0134 ohm	13.5 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified	ESD PROTECTED		e3
NVMFS5113PLT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	415 A	315 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn) - annealed	.014 ohm		DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FQD1N80TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	90 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	20 ohm	1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
BSC098N10NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	240 A	30 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0098 ohm	11 A	DUAL	R-PDSO-F8	1	DRAIN				e3	40	260
FQD16N25CTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	160 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	432 mJ	16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.27 ohm	16 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252	e3	30	260
AUIRF7759L2TR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	UNSPECIFIED	SWITCHING	75 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	640 A	257 mJ	375 A	9	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.0023 ohm	26 A	BOTTOM	R-XBCC-N9	1	DRAIN								AEC-Q101
CSD19534Q5AT	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	137 A	55 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0176 ohm	10 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	7.4 pF
IRLML6401TR	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A	33 mJ	4.3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	43 ns	-55 Cel	460 ns	TIN LEAD	.05 ohm	4.3 A	DUAL	R-PDSO-G3			Not Qualified	HIGH RELIABILITY	TO-236AB	e0			125 pF
FDML7610S	Onsemi	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	40 A		60 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.0075 ohm	12 A	DUAL	R-PDSO-N6	1		Not Qualified			e4	30	260
IRFR540ZTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	91 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	39 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0285 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
IRF7507TRPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	19 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.14 ohm	2.4 A	DUAL	R-PDSO-G8	1			ULTRA LOW RESISTANCE		e3	30	260
IRFS7530TRL7PP	Infineon Technologies	N-CHANNEL	SINGLE	YES	375 W			60 V				1			240 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0014 ohm	240 A			1					e3	30	260
AUIRF7759L2TR1	International Rectifier	N-CHANNEL	SINGLE	YES	125 W							1			375 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							375 A
IRF7493TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	74 A	180 mJ	9.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.015 ohm	9.3 A	DUAL	R-PDSO-G8	1				MS-012AA		30	260
IPT012N08N5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1200 A	817 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0012 ohm	52 A	SINGLE	R-PSSO-F2	1	DRAIN				e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.