YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF7319TRPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.029 ohm		DUAL	R-PDSO-G8	1			AVALANCHE RATED, ULTRA-LOW RESISTANCE	MS-012AA
NDS355AN-NB9L007A	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1			1.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin (Sn)		1.7 A			1					e3	30	260
DMP4065S-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.08 ohm	2.4 A	DUAL	R-PDSO-G3	1					e3	30	260	40 pF
IRF9540NSTRLPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	92 A	84 mJ	23 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.117 ohm	23 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-263AB	e3	30	260
SQM40P10-40L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.04 ohm	40 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
FDS4935A	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.023 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDMS86300DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	260 A	240 mJ	60 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0031 ohm	24 A	DUAL	R-PDSO-F5	1	DRAIN		ULTRA LOW RESISTANCE	MO-240AA	e3	30	260
CSD19536KTT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	806 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0028 ohm	200 A	SINGLE	R-PSSO-G2	2	DRAIN		AVALANCHE RATED	TO-263AB	e3	30	260	61 pF
SI7315DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	C BEND	SQUARE	ENHANCEMENT MODE	1	10 A	9.8 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.315 ohm	8.9 A	DUAL	S-PDSO-C5	1	DRAIN				e3	30	260
BSL302SNH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	30 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.025 ohm	7.1 A	DUAL	R-PDSO-G6	1			AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
NDT452AP	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-65 Cel		MATTE TIN	.065 ohm	5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
IRLML0030TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.3 W	150 Cel	SILICON		-55 Cel			.027 ohm	5.3 A	DUAL	R-PDSO-G3	1				TO-236AB				39 pF
FDD4685-F085P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	121 mJ	32 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	43 ns	-55 Cel	81 ns	MATTE TIN	.027 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260	205 pF	AEC-Q101
BBS3002-DL-1E	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	340 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.009 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245	950 pF
FDD4141-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	337 mJ	58 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0123 ohm	10.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
FDD4141_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	337 mJ	58 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0123 ohm	10.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
SQJ459EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	80 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.018 ohm	52 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED
IRLML6401	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A	33 mJ	4.3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	43 ns	-55 Cel	460 ns	TIN LEAD	.05 ohm	4.3 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY	TO-236AB	e0			125 pF
SI7461DP-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	60 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	60 A	125 mJ	8.6 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0145 ohm	8.6 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
IRFHS9301TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	52 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.037 ohm	6 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3	30	260
BSP316PH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.72 A		.68 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	1.8 ohm	.68 A	DUAL	R-PDSO-G4	1	DRAIN		LOGIC LEVEL COMPATIBLE		e3	40	260		AEC-Q101
FDD8424H	Onsemi	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	55 A	29 mJ	9 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.024 ohm	20 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified			e3	30	260
FQT7N10LTF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	50 mJ	1.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.38 ohm	1.7 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDD4243	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	84 mJ	14 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.064 ohm	6.7 A	SINGLE	R-XSSO-G2	1		Not Qualified		TO-252	e3	30	260
IRF7424TRPBF	Infineon Technologies	P-CHANNEL	SINGLE	YES	2.5 W			30 V				1			11 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0135 ohm	11 A			1				MS-012AA	e3	30	260
IRF5305STRLPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	280 mJ	31 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.06 ohm	31 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY	TO-252	e3	30	260
NVF2955T1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	225 mJ	2.6 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.185 ohm	1.7 A	DUAL	R-PDSO-G4	1	DRAIN			TO-261AA	e3	30	260		AEC-Q101
SQJ431AEP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37 A	45 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		-55 Cel			.315 ohm	9.4 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
RFD14N05LSM9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	48 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.1 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
RFD16N05LSM9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A		16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.056 ohm	16 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	MEGAFET	TO-252AA	e3	30	260
CSD18543Q3AT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	156 A	55 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0156 ohm	12 A	DUAL	R-PDSO-F5	1	DRAIN		AVALANCHE RATED		e3	30	260	6.2 pF
NDT456P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		7.5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	7.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
IRF530NSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	93 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN OVER NICKEL	.09 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
BSP295H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.5 ohm	1.8 A	DUAL	R-PDSO-G4	1	DRAIN				e3	40	260		AEC-Q101
SQJ457EP-T1_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	68 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	64.8 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	35 ns	-55 Cel	87 ns		.025 ohm	36 A	SINGLE	R-PSSO-G4		DRAIN					NOT SPECIFIED	NOT SPECIFIED	275 pF	AEC-Q101
FDS4675	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.013 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
SI7469DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY		80 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	40 A	100 mJ	28 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.025 ohm	10.2 A	DUAL	R-PDSO-C5	1	DRAIN	Not Qualified			e3	30	260
BSC123N08NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	66 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	220 A	70 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0123 ohm	55 A	DUAL	R-PDSO-N8		DRAIN
NVMFS5C604NLAFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	776 mJ	287 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0017 ohm	287 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	40 pF	AEC-Q101
NX3008NBKW,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.31 W						ENHANCEMENT MODE	1			.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		.35 A			1					e3	30	260
CSD16301Q2	Texas Instruments	N-CHANNEL	SINGLE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A	10 mJ	5 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.034 ohm	5 A	DUAL	R-PDSO-N6	1	DRAIN	Not Qualified			e4	30	260	17 pF
IRF7425TRPBF-1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0082 ohm	15 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
IRLML6401PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	34 A	33 mJ	4.3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	43 ns	-55 Cel	460 ns	MATTE TIN	.05 ohm	4.3 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY	TO-236AB	e3	30	260	125 pF
IRLL014NTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	32 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.14 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN		AVALANCHE RATED	TO-261AA	e3	30	260	30 pF
BSC016N06NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	139 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	380 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0016 ohm	30 A	DUAL	R-PDSO-F8	1	DRAIN				e3
FDB035N10A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	333 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	704 A	558 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0035 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-263AB	e3	30	245
IRF3205ZSTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	170 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	440 A	250 mJ	110 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.0065 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-263AB	e3	30	260
ZXMP10A18KTC	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21.1 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.15 ohm	3.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD		e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.