YES Power Field Effect Transistors (FET) 2,400+

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BSP89H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY		240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.4 A		.35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	6 ohm	.35 A	DUAL	R-PDSO-G4	1	DRAIN		LOGIC LEVEL COMPATIBLE		e3				AEC-Q101
IRFR3710ZTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	220 A	150 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.018 ohm	42 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
IRFR4620TRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	144 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	113 mJ	24 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.078 ohm	24 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
SUD50P08-25L-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	101 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.0252 ohm	12.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDMS86252L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	30 A	73 mJ	12 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.056 ohm	4.4 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
SI7116DN-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.8 W	UNSPECIFIED	SWITCHING	40 V	C BEND	SQUARE	ENHANCEMENT MODE	1	60 A	11 mJ	10.5 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0078 ohm	10.5 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	40	260
STD35P6LLF6	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.036 ohm	35 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
BSC160N15NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	224 A	43 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.016 ohm	56 A	DUAL	R-PDSO-F5	1	DRAIN				e3
IRFS4410ZTRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	230 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	390 A	242 mJ	97 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN OVER NICKEL	.009 ohm	97 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
SI7252DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	80 A	20 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.017 ohm	36.7 A	DUAL	R-PDSO-C6	1	DRAIN				e3	30	260
BSC026N08NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	370 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0026 ohm	23 A	DUAL	R-PDSO-F8	1	DRAIN				e3
BSP125H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.48 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	45 ohm	.12 A	DUAL	R-PDSO-G4	1	DRAIN		LOGIC LEVEL COMPATIBLE		e3	40	260		AEC-Q101
SI7463ADP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	UNSPECIFIED	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	45 mJ	46 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.01 ohm	46 A	DUAL	R-XDSO-C5		DRAIN				e3
NTD5867NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	18 mJ	20 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	36 W	150 Cel	SILICON	19.1 ns	-55 Cel	20.6 ns	MATTE TIN	.05 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
SI7232DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	UNSPECIFIED	SWITCHING	20 V	C BEND	SQUARE	ENHANCEMENT MODE	2	40 A	11 mJ	25 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0164 ohm	10 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
PSMN4R8-100BSEJ	NXP Semiconductors	N-CHANNEL	SINGLE	YES	405 W						ENHANCEMENT MODE	1			120 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		120 A			1					e3	30	245
FDD4243-F085P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		84 mJ	14 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	38 ns	-55 Cel	49 ns	MATTE TIN	.044 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260	135 pF	AEC-Q101
NCV8406ASTT1G	Onsemi	N-CHANNEL	COMPLEX	YES	1.81 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		110 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-40 Cel		Matte Tin (Sn) - annealed	.24 ohm		DUAL	R-PDSO-G4	1	DRAIN				e3	30	260		AEC-Q101
FDT434P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		6 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FQT4N20LTF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.4 A	52 mJ	.85 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.4 ohm	.85 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
MCH3406-TL-E	Onsemi	N-CHANNEL	SINGLE	YES	1 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		3 A			1					e6
NDS7002A_NB9GGTXA	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.5 A		.28 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-65 Cel			2 ohm	.28 A	DUAL	R-PDSO-G3					TO-236AB				5 pF
SQM120P06-07L-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	320 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0067 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
SI7149ADP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	300 A	31.2 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				PURE MATTE TIN	.0052 ohm	50 A	DUAL	R-PDSO-C5	1	DRAIN
STD30NF06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	150 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.03 ohm	35 A	SINGLE	R-PSSO-G2	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AA	e3	30	260
BSC093N15NS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	348 A	130 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0093 ohm	87 A	DUAL	R-PDSO-F8	1	DRAIN				e3
BSC600N25NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	100 A	210 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.06 ohm	25 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260
IPT020N10N3ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1200 A	800 mJ	300 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.02 ohm	300 A	SINGLE	R-PSSO-F8	1	DRAIN		ULTRA LOW RESISTANCE		e3	40	260
FQB22P10TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	710 mJ	22 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.125 ohm	22 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
IAUT300N10S5N015ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	375 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	1200 A	652 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	44 ns	-55 Cel	118 ns	TIN	.0015 ohm	300 A	SINGLE	R-PSSO-F8	1	DRAIN				e3			126 pF	AEC-Q101
IRF7205TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.07 ohm	4.6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA	e3	30	260
FDD6685	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.02 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
BSC028N06NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0028 ohm	23 A	DUAL	R-PDSO-F8	1	DRAIN				e3
IPZ40N04S5L4R8ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	53 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.0067 ohm	40 A	DUAL	R-PDSO-N8	1	DRAIN				e3				AEC-Q101
IRFR6215TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	310 mJ	13 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.295 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260
IPB200N25N3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	256 A	320 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.02 ohm	64 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
STB6NK90ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	23.2 A	300 mJ	5.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2 ohm	5.8 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED, HIGH VOLTAGE		e3	30	245
IPD50P04P4L11ATMA2	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	58 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	18 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.0106 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3			74 pF	AEC-Q101
IRF3415STRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	590 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN OVER NICKEL	.042 ohm	43 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY		e3	30	260
BSP315P	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4.68 A	24 mJ	1.17 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.8 ohm	1.17 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	40	260
SI7489DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	61 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	55 ns	-55 Cel	315 ns	Matte Tin (Sn) - annealed	.041 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3	30	260
BSC030P03NS3GAUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	345 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	199 ns	-55 Cel	197 ns	TIN	.0046 ohm	25.4 A	DUAL	R-PDSO-N8	3	DRAIN	Not Qualified			e3			520 pF
CSD19536KTTT	Texas Instruments	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	806 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0028 ohm	200 A	SINGLE	R-PSSO-G2	2	DRAIN		AVALANCHE RATED	TO-263AB	e3	30	260	61 pF
2N7002PS,115	NXP Semiconductors	N-CHANNEL		YES	.99 W						ENHANCEMENT MODE				.32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			-55 Cel		TIN		.32 A			1					e3	30	260
IRF3205ZSPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	170 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	440 A	180 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.0065 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	260	310 pF
BSC014N06NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	580 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.00145 ohm	30 A	DUAL	R-PDSO-F8	1	DRAIN				e3
SUD50P06-15-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	113 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	125 mJ	50 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.015 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IRFL9014TRPBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	140 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.5 ohm	1.8 A	DUAL	R-PDSO-G4		DRAIN		AVALANCHE RATED	TO-261AA		NOT SPECIFIED	NOT SPECIFIED	31 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.