YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NCV8406ASTT3G	Onsemi	N-CHANNEL	COMPLEX	YES	1.81 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		110 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-40 Cel			.24 ohm		DUAL	R-PDSO-G4		DRAIN								AEC-Q101
FDS4559_NL	Fairchild Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	90 mJ	4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.055 ohm	4.5 A	DUAL	R-PDSO-G8			Not Qualified			e3
SISS71DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A	31 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-50 Cel		MATTE TIN	.082 ohm	23 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260
AUIRF5210STRL	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	170 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	120 mJ	38 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.06 ohm	38 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE RATED	TO-263AB					AEC-Q101
BUK9M85-60EX	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	51 A	4.55 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.085 ohm	12.8 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260		AEC-Q101; IEC-60134
ZVN2110GTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	4 ohm	.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3	30	260
BSC028N06NSTATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				TIN	.0028 ohm	23 A	DUAL	R-PDSO-F8	1	DRAIN				e3
CSD18504Q5AT	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	275 A	92 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0098 ohm	15 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	9.6 pF
SI7431DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	5.4 W	UNSPECIFIED	SWITCHING	200 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	30 A	45 mJ	2.2 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.174 ohm	2.2 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	40	260
IRFH5004TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	250 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	340 mJ	100 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0026 ohm	28 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
AUIRF4905STRL	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	170 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	140 mJ	42 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.02 ohm	42 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB					AEC-Q101
IRF7413ZTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	32 mJ	13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.01 ohm	13 A	DUAL	R-PDSO-G8	1				MS-012AA
FDB3632_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	310 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		338 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.009 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	260		AEC-Q101
FDB3632-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	310 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		338 mJ	12 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.009 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245		AEC-Q101
BSP315PH6327	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4.68 A	24 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.8 ohm	1.17 A	DUAL	R-PDSO-G4		DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	40	260		AEC-Q101
FDS6675BZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A		11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	26 ns	-55 Cel	300 ns	MATTE TIN	.013 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	500 pF
BBS3002-TL-1E	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	90 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	340 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.009 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245	950 pF
IPB120P04P4L03ATMA2	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	136 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	78 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.0049 ohm	120 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3			270 pF	AEC-Q101
SQM120P10-10M1L_GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	304 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.0101 ohm	120 A	SINGLE	R-PSSO-G2					TO-263AB		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
BSC900N20NS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	61 A	100 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.09 ohm	15.2 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3
FDMS86350ET80	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	187 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	693 A	864 mJ	198 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	135 ns	-55 Cel	85 ns	Matte Tin (Sn) - annealed	.0024 ohm	198 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260
BSC067N06LS3GATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	47 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0067 ohm	15 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3
IRF7304TRPBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2				8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.09 ohm	3.6 A	DUAL	R-PDSO-G8	1			LOGIC LEVEL COMPATIBLE
IRFR024NTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	71 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - with Nickel (Ni) barrier	.075 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
FQB12P20TM	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	120 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A	810 mJ	11.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.47 ohm	11.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	FAST SWITCHING	TO-263AB	e3	30	245
DMP3056LDM-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A		5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.045 ohm	5 A	DUAL	R-PDSO-G6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
FQD8P10TM-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	44 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26.4 A	150 mJ	6.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.53 ohm	6.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FQD8P10TM_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	44 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26.4 A	150 mJ	6.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.53 ohm	6.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NVMFD5C650NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	125 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	502 A	186 mJ	111 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0058 ohm	21 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
IRFR7440TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	140 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	760 A	376 mJ	180 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.0024 ohm	90 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
ZXMP6A13GTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.8 A		2.3 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.39 ohm	2.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
BSC011N03LSTATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	190 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					.0014 ohm	37 A	DUAL	R-PDSO-F8	1	DRAIN						260
IRLML2502TR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	33 A		4.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.045 ohm	4.2 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e0	30	245
IRF7749L1TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	125 W							1			375 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							375 A			1
CSD18563Q5A	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	116 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	96 A	146 mJ	93 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.0108 ohm	15 A	DUAL	R-PDSO-F5	1	DRAIN		AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	NOT SPECIFIED	260	5.1 pF
SI2319CDS-T1-BE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	34 ns	-55 Cel	46 ns		.077 ohm	4.4 A	DUAL	R-PDSO-G3					TO-236AB				61 pF	IEC-61249-2-21
IRF9358TRPBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	73 A	210 mJ	9.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0163 ohm	9.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
DMP6023LE-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	62.9 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.028 ohm	7 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
FDD4685-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	121 mJ	40 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	43 ns	-55 Cel	81 ns	MATTE TIN	.027 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260	205 pF	AEC-Q101
FDD4685_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	121 mJ	40 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	43 ns	-55 Cel	81 ns	MATTE TIN	.027 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260	205 pF	AEC-Q101
IRLL024NTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	120 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.065 ohm	3.1 A	DUAL	R-PDSO-G4	1	DRAIN		AVALANCHE RATED, ULTRA-LOW RESISTANCE	TO-261AA	e3	30	260
SI7155DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	125 mJ	100 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	116 ns	-55 Cel	420 ns		.0046 ohm	100 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	1370 pF
SQ2318AES-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	8 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	24 ns	-55 Cel	26.5 ns		.031 ohm	8 A	DUAL	R-PDSO-G3					TO-236AB		NOT SPECIFIED	NOT SPECIFIED	46 pF
BSC220N20NSFDATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	208 A	214 mJ	52 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.022 ohm	52 A	DUAL	R-PDSO-N8	1	DRAIN				e3			10 pF
NX3008NBK,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.42 W						ENHANCEMENT MODE	1			.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		.4 A			1					e3	30	260
IRF3710STRLPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	280 mJ	57 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN OVER NICKEL	.023 ohm	57 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	TO-263AB	e3	30	260
FDS2572	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.053 ohm	4.9 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF2804STRL7PP	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	330 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1360 A	630 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.0016 ohm	160 A	SINGLE	R-PSSO-G6	1	DRAIN				e3	30	260	970 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.