Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

AF2302NWA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2.4 A

e0

DMT10H010SPS-13

Diodes Incorporated

MATTE TIN

1

e3

30

260

S2PF650N80

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

DMS2220LFW-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2.9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.095 ohm

2.9 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

HIGH RELIABILITY

e4

260

DMT3006LFDFQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

80 A

31 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.007 ohm

14.1 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

72 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMT10H009LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

200 A

144.5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0085 ohm

13 A

DUAL

S-PDSO-N8

DRAIN

e3

260

16 pF

MIL-STD-202

DMN80H2D0SCTI

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

60 mJ

7 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

30

260

11 pF

AF1332NULA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.6 A

30

260

LCS65P02A

Diodes Incorporated

3

DMT32M5LPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

350 A

140 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.003 ohm

100 A

DUAL

R-PDSO-F8

DRAIN

e3

260

186 pF

AF4920NSLA

Diodes Incorporated

N-CHANNEL

YES

2.1 W

ENHANCEMENT MODE

6.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.9 A

260

DMP26M7UFG-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

SQUARE

ENHANCEMENT MODE

1

80 A

28 mJ

18 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0067 ohm

18 A

DUAL

S-PDSO-F5

e3

260

728 pF

DMG9926USD-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

30 A

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.024 ohm

8 A

DUAL

R-PDSO-G8

1

Not Qualified

HIGH RELIABILITY

e3

30

260

UZVN2120GTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.32 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZVP0545G

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Matte Tin (Sn)

150 ohm

.075 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

40

260

DMC2053UFDBQ-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMP2110UVTQ-13

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.01 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

15 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.15 ohm

1.8 A

DUAL

R-PDSO-G6

e3

260

47 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMT3002LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

700 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0025 ohm

240 A

DUAL

R-PDSO-F8

DRAIN

e3

260

300 pF

MIL-STD-202

AF6930NSL

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2.1 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

260

DMT10H032SFVW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

SQUARE

ENHANCEMENT MODE

1

140 A

25.35 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.032 ohm

35 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

6 pF

MIL-STD-202

DMN90H8D5HCT

Diodes Incorporated

MATTE TIN

1

e3

260

DMJ70H1D3SJ3

Diodes Incorporated

MATTE TIN

e3

260

DMC2025UFDBQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

20 A

8.5 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.035 ohm

6 A

DUAL

R-PDSO-N6

DRAIN

e4

260

77 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMT34M1LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

250 A

78 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0052 ohm

21 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

DMC1016UPD-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

65 A

25 mJ

9.5 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.017 ohm

9.5 A

DUAL

R-PDSO-F6

DRAIN

e3

260

311 pF

DMT8012LK3-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

10.2 mJ

44 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.017 ohm

44 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

e3

260

10 pF

UZVP2106GTA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.45 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UZXMHC6A07T8TC

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

8.7 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.3 ohm

1.8 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

40

260

AF4410NSA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

3.1 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

DMS2120LFWB-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2.9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.095 ohm

2.9 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

HIGH RELIABILITY

e4

30

260

UZXMP6A13GTC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.8 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.39 ohm

2.3 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

40

260

DMT31M7LSS-13

Diodes Incorporated

MATTE TIN

e3

260

ZXMHC3A01T8TC

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

14.5 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.12 ohm

2.7 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZVNL110G

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

.6 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.6 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

260

DMT32M4LPSW-13

Diodes Incorporated

MATTE TIN

e3

260

UZVNL120GTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10 ohm

.32 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

S2P760N65R

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

UZVN2106GTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2 ohm

.71 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMP2160UFDBQ-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

13 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.07 ohm

3.8 A

DUAL

S-PDSO-N6

1

DRAIN

HIGH RELIABILITY

e4

260

AEC-Q101

DMP2018LFK-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

90 A

72 mJ

9.2 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.016 ohm

7.1 A

DUAL

R-PDSO-N4

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

DMP2007UFG-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

80 A

50 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

MATTE TIN

.007 ohm

18 A

DUAL

S-PDSO-N5

1

DRAIN

e3

30

260

DMC2053UFDBQ-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

S2PF350N70

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

DMP2033UVT-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

4.2 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.065 ohm

4.2 A

DUAL

R-PDSO-G6

1

e3

30

260

63 pF

AEC-Q101

DMP2022LSSQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.013 ohm

9.3 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

260

AEC-Q101

DMT3003LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

100 A

250 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0032 ohm

100 A

DUAL

S-PDSO-N8

DRAIN

e3

260

240 pF

MIL-STD-202

S2PF900N65R

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

DMT10H009SPS-13

Diodes Incorporated

MATTE TIN

1

e3

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.