Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

DMC4029SSD-13

Diodes Incorporated

MATTE TIN

1

e3

30

260

LC60P03K

Diodes Incorporated

LV36C03

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LV20P03K

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LTP17N06

Diodes Incorporated

LNP5N03

Diodes Incorporated

LTNP17P04K

Diodes Incorporated

LTV4N10

Diodes Incorporated

LTD35N10

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

86 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.029 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

80 pF

LCS75P02A

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

S2D350N70

Diodes Incorporated

3

S2TB99N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

S2PF650N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LV11N03S

Diodes Incorporated

S2U1R4N70

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

S2PF580N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTD95N04

Diodes Incorporated

S2U1R0N70

Diodes Incorporated

3

LCS110P02A

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LV17N03K

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LTD36N08

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LTP194N08

Diodes Incorporated

LV14C03

Diodes Incorporated

S2P500N70

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LD8P03

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LCC120P02

Diodes Incorporated

LNP10D5N03

Diodes Incorporated

S2U380N65R

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

S2TB99N65F

Diodes Incorporated

LV18N03B

Diodes Incorporated

LTV4C06

Diodes Incorporated

S2U750N70

Diodes Incorporated

3

S2PF420N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LCS50P03

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LTV8C04

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LNP4D6N03K

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LV14N03S

Diodes Incorporated

LCS37N03

Diodes Incorporated

LV3D6N03

Diodes Incorporated

LTV8N10A

Diodes Incorporated

LTV6C06

Diodes Incorporated

LZPF7N60

Diodes Incorporated

N-CHANNEL

SINGLE

NO

53 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

LCS110P02C

Diodes Incorporated

LTPF56N08A

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LV3D5N03

Diodes Incorporated

LD8D5N03

Diodes Incorporated

LTD28N10

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTD19P04

Diodes Incorporated

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.