Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

LNP11P03

Diodes Incorporated

S2PF380N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LNP6D5N03P

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

S2D380N65R

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LCS32N03A

Diodes Incorporated

LCS52P02

Diodes Incorporated

LD5D2N03

Diodes Incorporated

LTV12N08

Diodes Incorporated

LCS65P02

Diodes Incorporated

LZPF4N60

Diodes Incorporated

N-CHANNEL

SINGLE

NO

39 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16.4 A

330 mJ

4.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

2.5 ohm

4.1 A

SINGLE

R-PSFM-T3

ISOLATED

18 pF

LTP60N10

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

540 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0158 ohm

60 A

SINGLE

R-PSFM-T3

TO-220AB

LD32P03

Diodes Incorporated

LCC50P03

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LCS68P03

Diodes Incorporated

LV11N03A

Diodes Incorporated

LTNP45N04P

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTD51N10

Diodes Incorporated

LCS50P02K

Diodes Incorporated

LTD25N06

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LV11N03

Diodes Incorporated

LTV11N06A

Diodes Incorporated

LCC65P03

Diodes Incorporated

LV16C03

Diodes Incorporated

GNP10N10

Diodes Incorporated

LTP75N10

Diodes Incorporated

S2QT200N65R

Diodes Incorporated

3

LTC3P06

Diodes Incorporated

S2TB42N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTD11P10

Diodes Incorporated

LV20P03

Diodes Incorporated

LCC32N03

Diodes Incorporated

LTV8N10

Diodes Incorporated

LD6D6N03

Diodes Incorporated

LCC77P02

Diodes Incorporated

LV5D5N03K

Diodes Incorporated

S2D750N70

Diodes Incorporated

3

S2U500N70

Diodes Incorporated

3

LC50P02K

Diodes Incorporated

LCS35P02

Diodes Incorporated

LTV6P04

Diodes Incorporated

S2P1R0N70

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LV6N03

Diodes Incorporated

LTCP4N10

Diodes Incorporated

LC65P02

Diodes Incorporated

LTV4P06

Diodes Incorporated

S2PF290N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LV6D2N03A

Diodes Incorporated

LTV11N04

Diodes Incorporated

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.