Diodes Incorporated - LZPF4N60

LZPF4N60 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LZPF4N60
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 39 W; Terminal Position: SINGLE; Maximum Feedback Capacitance (Crss): 18 pF;
Datasheet LZPF4N60 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.1 A
Maximum Pulsed Drain Current (IDM): 16.4 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 39 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 2.5 ohm
Avalanche Energy Rating (EAS): 330 mJ
Maximum Feedback Capacitance (Crss): 18 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Maximum Drain Current (Abs) (ID): 4.1 A
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