Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

S2D1R0N70

Diodes Incorporated

3

LTP120N06

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

405 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.004 ohm

120 A

SINGLE

R-PSFM-T3

TO-220AB

LD9N03

Diodes Incorporated

LC40P03

Diodes Incorporated

LLS22C02K

Diodes Incorporated

LNP15N03

Diodes Incorporated

LTNP25N06P

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTV4C10

Diodes Incorporated

S2PF760N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LV21P03

Diodes Incorporated

S2QT290N65R

Diodes Incorporated

1

LV35C03K

Diodes Incorporated

LCS110P02BK

Diodes Incorporated

LCS60N03K

Diodes Incorporated

LD4D8N03K

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTCS2P06

Diodes Incorporated

SMLU1232

Diodes Incorporated

S2D500N70

Diodes Incorporated

3

S2P1R4N70

Diodes Incorporated

LV6D2N03

Diodes Incorporated

LV45P03

Diodes Incorporated

S2D1R4N70

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LCS55P03

Diodes Incorporated

LCC37N03A

Diodes Incorporated

LTV5C06

Diodes Incorporated

LV12N03S

Diodes Incorporated

S2TB41N65F

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

S2TB200N65R

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTD39N04

Diodes Incorporated

LV14P03

Diodes Incorporated

LD15N03

Diodes Incorporated

LV22N03

Diodes Incorporated

LV60P03

Diodes Incorporated

LV20P03A

Diodes Incorporated

DMT15H035SCT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

166 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

144.5 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.035 ohm

46 A

SINGLE

R-PSFM-T3

TO-220AB

e3

260

4.2 pF

MIL-STD-202

DMN4060SVTQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

23 A

18 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.046 ohm

4.3 A

DUAL

R-PDSO-G6

e3

42.5 pF

AEC-Q101; MIL-STD-202

DMN4060SVTQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

23 A

18 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.046 ohm

4.3 A

DUAL

R-PDSO-G6

e3

42.5 pF

AEC-Q101; MIL-STD-202

DMT12H060LCA9-7

Diodes Incorporated

NICKEL GOLD

e4

DMP27M1UPSW-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.57 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

179 A

54 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.007 ohm

84 A

DUAL

R-PDSO-F8

DRAIN

e3

518 pF

MIL-STD-202

DMP2004UFG-13

Diodes Incorporated

MATTE TIN

e3

260

DMT15H053SK3-13

Diodes Incorporated

MATTE TIN

e3

260

ZVP4525GQTA

Diodes Incorporated

MATTE TIN

e3

DMP2900UFB-7B

Diodes Incorporated

MATTE TIN

e3

DMP22D5UFB4-7B

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.18 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

1.9 ohm

.4 A

BOTTOM

R-PBCC-N3

DRAIN

e4

2.7 pF

MIL-STD-202

DMJ70H600HK3-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

97 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.6 ohm

7.6 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

40 pF

MIL-STD-202

DMP2541UCP9-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

1.67 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

35 A

9

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER

.06 ohm

3.8 A

BOTTOM

S-XBCC-N9

e2

20 pF

ZXMS6008FF-7

Diodes Incorporated

MATTE TIN

e3

DMC6022SSD-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

45 A

24 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.034 ohm

6 A

DUAL

R-PDSO-G8

e3

260

51 pF

MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.