Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMT67M8LPSW-13	Diodes Incorporated																									MATTE TIN					1					e3		260
DMN3052L-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	19 A		5.4 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.032 ohm	5.4 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN12M3UCA6-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	2.47 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	4787 ns	-55 Cel	10255 ns				BOTTOM	R-XBCC-N6	1						30	260	297 pF
DMP3008SFGQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A		7.1 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	7.1 A	DUAL	S-PDSO-N5	1	DRAIN		HIGH RELIABILITY		e3	30	260	294 pF	AEC-Q101
DMNH6042SSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	35 A	65 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	5.3 A	DUAL	R-PDSO-G8						e3		260	24 pF
DMN6068LK3Q-13	Diodes Incorporated																									MATTE TIN					1					e3	30	260
DMN3008SCP10-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	2.7 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				10	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD			BOTTOM	R-XBCC-N10	1			ESD PROTECTED		e4		260
DMTH10H2M5STLWQ-13	Diodes Incorporated																									MATTE TIN										e3		260
DMN3020LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.9 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	51 A		16.7 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.02 ohm	11.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
DMN68M7SCT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	68 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	183 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.008 ohm	100 A	SINGLE	R-PSFM-T3					TO-220AB	e3		260	198 pF	MIL-STD-202
DMT6009LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	19.2 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	90 A	40.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	11 A	DUAL	S-PDSO-N8		DRAIN				e3		260	41 pF	MIL-STD-202
DMN2040LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.026 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN2027USS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.81 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A		9.8 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.02 ohm	7.3 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMTH6015LDVWQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	2	98 A	20.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0205 ohm	9.2 A	DUAL	S-PDSO-F8		DRAIN				e3		260	20.5 pF	AEC-Q101; MIL-STD-202
DMTH69M8LFVWQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	29.4 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	180 A	45 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0095 ohm	15.9 A	DUAL	S-PDSO-F8		DRAIN		HIGH RELIABILITY		e3		260	41 pF	AEC-Q101; MIL-STD-202
DMT6016LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	11.7 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.015 ohm	32 A	DUAL	R-PDSO-F5	1	DRAIN				e3		260
DMP1008UCA9-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	8 V	BALL	SQUARE	ENHANCEMENT MODE	1	80 A		16 A	9	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		COPPER NICKEL GOLD	.0091 ohm	16 A	BOTTOM	S-PBGA-B9	1					e4		260	164 pF
DMN15H310SE-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	1.45 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.31 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN				e3		260
DMTH3004LFGQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	250 A	110 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0055 ohm	75 A	DUAL	S-PDSO-N8	3	DRAIN		HIGH RELIABILITY		e3		260	240 pF	AEC-Q101; MIL-STD-202
ZXMP10A18GTC	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16.5 A		2.6 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.15 ohm	2.6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
DMNH6008SPS-13	Diodes Incorporated																									MATTE TIN					1					e3	30	260
DMNH10H028SPS-13	Diodes Incorporated																									MATTE TIN										e3		260
DMC3016LNS-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	2	55 A	24 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.02 ohm	9 A	DUAL	S-PDSO-F8	1					e3	30	260	107 pF	MIL-STD-202
DMTH8008LFGQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	280 A	162 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0069 ohm	70 A	DUAL	S-PDSO-N8		DRAIN				e3		260	31 pF	AEC-Q101; MIL-STD-202
DMT616MLSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.06 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	12.3 mJ	10 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.014 ohm	10 A	DUAL	R-PDSO-G8	1					e3		260	27 pF
DMN2041LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.16 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		7.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.028 ohm	7.63 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN3009LFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1				8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.0055 ohm	60 A	DUAL	S-PDSO-N8	1	DRAIN				e3	30	260
DMTH10H010SPSQ-13	Diodes Incorporated																									MATTE TIN					1					e3	30	260
DMN2005LP-13	Diodes Incorporated	N-CHANNEL	SINGLE	YES	.2 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		.2 A			1					e3		260
DMNH6042SPD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	32 A	65 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.05 ohm	5.7 A	DUAL	R-PDSO-F6		DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
DMT6009LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	20.6 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.01 ohm	13.3 A	SINGLE	R-PSSO-G2		DRAIN		HIGH RELIABILITY	TO-252	e3		260		AEC-Q101
DMP1011LFVQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.16 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	70 A	86 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0117 ohm	19 A	DUAL	R-PDSO-F8		SOURCE				e3		260	53 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMG4N65CT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	9.14 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	456 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3 ohm	4 A	SINGLE	R-PSFM-T3	1			HIGH RELIABILITY	TO-220AB	e3	30	260		AEC-Q101
DMTH4014LDVW-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.6 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	2	110 A	19.6 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.015 ohm	10.2 A	DUAL	S-PDSO-F8		DRAIN				e3		260	21 pF	MIL-STD-202
DMTH8008SPS-13	Diodes Incorporated																									MATTE TIN					1					e3		260
DMTH10H010LPS-13	Diodes Incorporated																									MATTE TIN					1					e3	30	260
DMNH10H028SCT	Diodes Incorporated																									MATTE TIN										e3		260
DMT6004LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	160 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.0028 ohm	22 A	DUAL	R-PDSO-F5	1	DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
BSS126SK-7	Diodes Incorporated																									MATTE TIN										e3		260
DMT6010LSS-13	Diodes Incorporated																									MATTE TIN										e3		260
DMN2005UPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	133 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0087 ohm	20 A	DUAL	R-PDSO-F8		DRAIN				e3		260	505 pF	MIL-STD-202
DMTH4014LFVWQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57.7 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	2	180 A	19.6 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0137 ohm	49.8 A	DUAL	S-PDSO-F8		DRAIN				e3			21 pF	AEC-Q101; MIL-STD-202
DMG2301L-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.12 ohm	3 A	DUAL	R-PDSO-G3						e3		260	45 pF
DMT69M5LCG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.64 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	208 A	37.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.0083 ohm	52.1 A	DUAL	S-PDSO-N8	1	DRAIN				e4	30	260	52 pF	MIL-STD-202
DMN3013LDG-7	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	YES	2.16 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	80 A	28 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.16 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.0177 ohm	9.5 A	DUAL	S-PDSO-N8	1	SOURCE				e3		260	16 pF	MIL-STD-202
DMP3050LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		4.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	4.8 A	DUAL	R-PDSO-G8	1					e3	30	260
DMP3065LVT-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	32 ns	-55 Cel	75 ns	MATTE TIN	.042 ohm	4 A	DUAL	R-PDSO-G6	1					e3	30	260	130 pF	MIL-STD-202
DMP1011UCB9-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.57 W	PLASTIC/EPOXY	SWITCHING	8 V	BALL	SQUARE	ENHANCEMENT MODE	1	50 A			9	GRID ARRAY		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.014 ohm	7.4 A	BOTTOM	S-PBGA-B9				HIGH RELIABILITY		e1		260	350 pF	AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.