Diodes Incorporated Power Field Effect Transistors (FET) 1,827

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

DMP3018SSS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

104 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.012 ohm

10.5 A

DUAL

R-PDSO-G8

e3

30

260

358 pF

IATF 16949; MIL-STD-202

DMN10H220LQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.22 ohm

1.4 A

DUAL

R-PDSO-G3

HIGH RELIABILITY

e3

260

17 pF

AEC-Q101; MIL-STD-202

DMTH43M8LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

350 A

87 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0033 ohm

100 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

52 pF

MIL-STD-202

DMTH8001STLWQ-13

Diodes Incorporated

MATTE TIN

e3

260

ZXMC6A09DN8TC

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

25 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.045 ohm

3.9 A

DUAL

R-PDSO-G8

Not Qualified

LOW THRESHOLD

NOT SPECIFIED

NOT SPECIFIED

DMT6015LFVW-7

Diodes Incorporated

MATTE TIN

e3

260

DMTH6016LFDFWQ-7R

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

70 A

11.7 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.018 ohm

9.4 A

DUAL

S-PDSO-N6

DRAIN

e3

260

25.4 pF

AEC-Q101; IATF 16949; MIL-STD-202

ZXMN2A02N8TA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

10.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

8.3 A

DUAL

R-PDSO-G8

1

Not Qualified

LOW THRESHOLD

e3

30

260

DMTH4014LDVW-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.6 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

2

110 A

19.6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

10.2 A

DUAL

S-PDSO-F8

DRAIN

e3

260

21 pF

MIL-STD-202

DMN3016LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

70 A

24 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.016 ohm

9.5 A

DUAL

R-PDSO-F5

1

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

DMP4010SK3-13

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

DMTH6002LPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

167 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

820 A

662 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0033 ohm

205 A

DUAL

R-PDSO-F8

DRAIN

e3

260

179 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMT6009LPS-13

Diodes Incorporated

MATTE TIN

e3

260

DMPH4023SK3Q-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.6 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

70 A

85 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.026 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH RELIABILITY

TO-252

e3

260

111 pF

AEC-Q101

DMP6018LPSQ-13

Diodes Incorporated

MATTE TIN

e3

260

DMTH43M8LK3Q-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

87 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0036 ohm

17.6 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH RELIABILITY

TO-252

e3

30

260

AEC-Q101

ZXMN6A25DN8TC

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

22 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.055 ohm

3.6 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMN15M5UCA6-7

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

UNSPECIFIED

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

90 A

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.01 ohm

11.5 A

BOTTOM

R-XBCC-N6

1

e4

12 pF

MIL-STD-202

DMTH4007SPS-13

Diodes Incorporated

MATTE TIN

e3

260

DMP3011SFVWQ-13

Diodes Incorporated

MATTE TIN

e3

260

ZVP2110GTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

8 ohm

.31 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMT6017LFDF-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.76 W

PLASTIC/EPOXY

SWITCHING

65 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

50 A

18 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.018 ohm

8.1 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

29 pF

MIL-STD-202

ZXMN4A06KTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35.3 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.05 ohm

10.9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOW THRESHOLD; FAST SWITCHING

e3

30

260

DMP3007SFG-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

120 A

130 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.006 ohm

70 A

DUAL

S-PDSO-N8

DRAIN

e3

260

305 pF

MIL-STD-202

DMTH6005LPS-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMN2058U-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.13 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.035 ohm

4.6 A

DUAL

R-PDSO-G3

e3

260

39 pF

DMTH6006LPSWQ-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMTH6016LPD-13

Diodes Incorporated

MATTE TIN

1

e3

260

ZXMP7A17GTC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

70 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9.6 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.16 ohm

3.7 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOW THRESHOLD; FAST SWITCHING

TO-261AA

e3

30

260

ZVP2110G

Diodes Incorporated

P-CHANNEL

SINGLE

YES

2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

.31 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

8 ohm

.31 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

DMP3120L-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

2.8 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.12 ohm

2.8 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

DMT6015LFV-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

60 A

14.5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.016 ohm

9.5 A

DUAL

S-PDSO-F8

1

DRAIN

e3

260

20 pF

MIL-STD-202

DMPH6023SK3Q-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.033 ohm

7.3 A

SINGLE

R-PSSO-G2

DRAIN

HIGH RELIABILITY

TO-252

e3

260

143 pF

AEC-Q101

DMN60H4D5SK3-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.6 A

33 mJ

2.5 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

41 ohm

2.5 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

e3

30

260

4.2 pF

DMT6016LPSW-13

Diodes Incorporated

MATTE TIN

1

e3

DMNH6035SPDWQ-13

Diodes Incorporated

Matte Tin (Sn)

1

e3

NOT SPECIFIED

NOT SPECIFIED

DMN3009SFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

80 A

55 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0055 ohm

16 A

DUAL

S-PDSO-N8

1

DRAIN

e3

30

260

248 pF

MIL-STD-202

DMTH6015LPDW-13

Diodes Incorporated

MATTE TIN

e3

260

DMTH4011SPDQ-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMP3011SSS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

102 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.01 ohm

32 A

DUAL

R-PDSO-G8

e3

260

296 pF

DMN10H220LVT-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.67 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.6 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.22 ohm

1.87 A

DUAL

R-PDSO-G6

e3

260

17 pF

MIL-STD-202

DMN3025LFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

60 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.018 ohm

7.5 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMTH4004SK3Q-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

160 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0032 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

HIGH RELIABILITY

TO-252

e3

260

AEC-Q101

DMN2024UQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.025 ohm

6.8 A

DUAL

R-PDSO-G3

1

e3

30

260

38 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMP65H9D0HSS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

9 ohm

.3 A

DUAL

R-PDSO-G8

e3

260

6.5 pF

MIL-STD-202

ZVP2106GTC

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.45 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMP3021SFVWQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

128 A

84 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

11 A

DUAL

S-PDSO-F8

DRAIN

e3

260

225 pF

AEC-Q101; IATF 16949

DMN3016LDN-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

45 A

24 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.02 ohm

7.3 A

DUAL

S-PDSO-N8

1

DRAIN

260

82 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.