Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMN1004UFDF-7	Diodes Incorporated																								NICKEL PALLADIUM GOLD					1					e4	30	260
DMTH10H009LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	220 A	144.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0085 ohm	14 A	DUAL	S-PDSO-N8		DRAIN				e3		260	16 pF	MIL-STD-202
ZXMN7A11GQTA	Diodes Incorporated																								MATTE TIN					1					e3	30	260
ZXMP6A18DN8TC	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	23 A		4.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.055 ohm	3.7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
DMTH8012LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	10.2 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	50 A	DUAL	R-PDSO-F8		DRAIN				e3		260	10 pF	MIL-STD-202
ZVN2120ZTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY		200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	2 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON					10 ohm	.27 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
DMC3021LSDQ-13	Diodes Incorporated																								MATTE TIN					1					e3	30	260
DMN3030LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		7 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.018 ohm	9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMC3036LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.036 ohm	6.9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMT64M2LPSW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83.3 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	165.6 mJ	100 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0044 ohm	100 A	DUAL	R-PDSO-F8		DRAIN				e3		260	79 pF
DMN6040SFDE-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.03 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A	10 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.038 ohm	5.3 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	44 pF
DMT6005LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	98 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0072 ohm	13.5 A	DUAL	R-PDSO-G8						e3		260	60 pF	MIL-STD-202
DMP3035LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		12 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.016 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMP3025LK3-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	10 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	41.9 A		16.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.025 ohm	10.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
DMN6069SFVW-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	32 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	56 A	7.2 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.069 ohm	4 A	DUAL	S-PDSO-F8		DRAIN				e3		260	28 pF	MIL-STD-202
DMTH6016LSDQ-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.9 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A	11.7 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0195 ohm	6.2 A	DUAL	R-PDSO-G8				HIGH RELIABILITY		e3		260	27 pF	AEC-Q101
DMTH32M5LPSQ-13	Diodes Incorporated																								MATTE TIN					1					e3		260
DMNH6042SK3Q-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	65 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.065 ohm	25 A	SINGLE	R-PSSO-G2		DRAIN		HIGH RELIABILITY	TO-252	e3		260		AEC-Q101
DMN3025LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A			5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.018 ohm	7.5 A	DUAL	S-PDSO-N5	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
DMN3016LDN-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	45 A	24 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.02 ohm	7.3 A	DUAL	S-PDSO-N8	1	DRAIN						260	82 pF
DMP3015LSSQ-13	Diodes Incorporated																								MATTE TIN					1					e3		260
DMN1033UCB4-7	Diodes Incorporated																								TIN SILVER COPPER					1					e1	30	260
ZXMN2B03E6TA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.04 ohm	4.3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
DMN2041UVT-13	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.44 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	36 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.028 ohm	5.8 A	DUAL	R-PDSO-G6						e3		260	79 pF	MIL-STD-202
DMTH10H025LK3Q-13	Diodes Incorporated																								MATTE TIN					1					e3		260
DMTH61M8SPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	860 A	640.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0016 ohm	215 A	DUAL	R-PDSO-F8	1	DRAIN				e3		260	184 pF	MIL-STD-202
DMTH6009LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A	20.6 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.01 ohm	14.2 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3	30	260		AEC-Q101
DMP3065LVT-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	32 ns	-55 Cel	75 ns	MATTE TIN	.042 ohm	4 A	DUAL	R-PDSO-G6	1					e3	30	260	130 pF	MIL-STD-202
ZVN2120GTC	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A		.32 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	10 ohm	.32 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3		260
DMT69M5LH3	Diodes Incorporated																								MATTE TIN										e3		260
DMTH4014LFVW-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	57.7 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	2	180 A	19.6 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0137 ohm	49.8 A	DUAL	S-PDSO-F8		DRAIN				e3		260	21 pF	MIL-STD-202
DMT68M8LFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41.7 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	210 A	39 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0095 ohm	54.1 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	44 pF	MIL-STD-202
DMNH4011SK3Q-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN		HIGH RELIABILITY	TO-252	e3		260	108 pF	AEC-Q101; MIL-STD-202
DMP3165LQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.09 ohm	3.3 A	DUAL	R-PDSO-G3						e3		260	35 pF	AEC-Q101; MIL-STD-202
DMTH4008LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55.5 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	110 A	25.7 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.013 ohm	64.8 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	27 pF	MIL-STD-202
DMN3010LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.0095 ohm	13.1 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3	30	260		AEC-Q101
DMN3112SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.057 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMP3012LPS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A			5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.012 ohm	11.4 A	DUAL	R-PDSO-F5	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
DMNH6012LK3Q-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.018 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN		HIGH RELIABILITY	TO-252	e3		260		AEC-Q101
ZVP2120G	Diodes Incorporated	P-CHANNEL	SINGLE	YES	2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.2 A		.2 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	25 ohm	.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3		260
ZXMN10A08GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.25 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261AA	e3	30	260
DMN3060LCA3-7	Diodes Incorporated																								NICKEL PALLADIUM GOLD										e4
DMTH61M8LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	187.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	900 A	605 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0016 ohm	225 A	DUAL	R-PDSO-F8		DRAIN				e3		260	157 pF	MIL-STD-202
DMN2053UFDB-7	Diodes Incorporated																								NICKEL PALLADIUM GOLD										e4		260
DMT6005LCT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	43.5 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.006 ohm	100 A	SINGLE	R-PSFM-T3				HIGH RELIABILITY	TO-220AB	e3		260		AEC-Q101
DMPH6050SPDQ-13	Diodes Incorporated																								Matte Tin (Sn)										e3	NOT SPECIFIED	NOT SPECIFIED
DMG4496SSSQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		10 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0215 ohm	10 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMNH15H110SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	121.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.11 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN			TO-252	e3			34 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.