Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

DMTH4004LK3-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

90 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.005 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

HIGH RELIABILITY

TO-252

e3

260

AEC-Q101

DMTH10H005SCT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

542 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.005 ohm

140 A

SINGLE

R-PSFM-T3

TO-220AB

e3

30

260

DMTH10H009LPS-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMN2040UVT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.024 ohm

6.7 A

DUAL

R-PDSO-G6

1

e3

30

260

83 pF

MIL-STD-202

DMNH10H028SK3-13

Diodes Incorporated

MATTE TIN

e3

260

DMT6002LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

167 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

294 mJ

100 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.003 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

e3

260

187 pF

DMNH4005SPS-13

Diodes Incorporated

MATTE TIN

e3

30

260

ZXMP6A17E6

Diodes Incorporated

P-CHANNEL

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.19 ohm

2.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

DMN3033LSNQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.03 ohm

6 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

108 pF

AEC-Q101

DMTH6005LPSQ-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMNH6021SPD-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

64 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.025 ohm

8.2 A

DUAL

R-PDSO-F6

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

ZXMP4435N8

Diodes Incorporated

P-CHANNEL

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.035 ohm

8.6 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMPH4029LFGQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

88 A

32 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.045 ohm

8 A

DUAL

S-PDSO-N8

1

DRAIN

HIGH RELIABILITY

e3

260

107 pF

AEC-Q101; MIL-STD-202

DMTH4004SCTBQ-13

Diodes Incorporated

MATTE TIN

e3

260

DMT68M8LFV-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41.7 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

210 A

39 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0095 ohm

54.1 A

DUAL

S-PDSO-F8

1

DRAIN

e3

260

44 pF

MIL-STD-202

DMT6010LFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

80 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0115 ohm

13 A

DUAL

S-PDSO-N8

1

DRAIN

e3

30

260

38.5 pF

MIL-STD-202

ZXMN7A11GTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

70 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.13 ohm

3.8 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

LOW THRESHOLD; FAST SWITCHING

TO-261AA

e3

30

260

DMTH4014LDVWQ-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.6 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

2

110 A

19.6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.015 ohm

10.2 A

DUAL

S-PDSO-F8

DRAIN

e3

260

21 pF

AEC-Q101; MIL-STD-202

DMN2024UVTQ-13

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

35 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.024 ohm

7 A

DUAL

R-PDSO-G6

e3

260

38 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH8028LFVW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.5 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

108 A

23.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.025 ohm

27 A

DUAL

S-PDSO-F8

DRAIN

e3

260

19.5 pF

DMP65H11D0HSS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

11 ohm

.27 A

DUAL

R-PDSO-G8

e3

3.5 pF

MIL-STD-202

DMTH6009LPSQ-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMP3045LFVW-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

76 A

30.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.042 ohm

19.9 A

DUAL

S-PDSO-F8

DRAIN

e3

74 pF

ZXMP6A17DN8

Diodes Incorporated

P-CHANNEL

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.18 ohm

2.9 A

DUAL

R-PDSO-G8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMG4496SSS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.42 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

10 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0215 ohm

10 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

DMNH6011LK3Q-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

147 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.018 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH RELIABILITY

TO-252

e3

30

260

127 pF

AEC-Q101; MIL-STD-202

DMN3009LFVQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

90 A

58 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0055 ohm

60 A

DUAL

S-PDSO-F8

DRAIN

e3

260

247 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMP3100L-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.08 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2.7 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.1 ohm

2.7 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW THRESHOLD, HIGH RELIABILITY

e3

30

260

DMTH6005LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

400 A

171 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0041 ohm

100 A

DUAL

S-PDSO-N8

DRAIN

e3

260

69 pF

MIL-STD-202

ZXMP10A17KTA

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.3 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.35 ohm

2.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOW THRESHOLD

TO-252AA

e3

DMTH47M2LPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

292 A

24.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0073 ohm

73 A

DUAL

R-PDSO-F8

DRAIN

e3

260

14.8 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMN3013LFG-7

Diodes Incorporated

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

YES

2.16 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

80 A

28 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.16 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.0177 ohm

9.5 A

DUAL

S-PDSO-N8

1

SOURCE

e3

260

16 pF

MIL-STD-202

DMNH10H028SPSQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

54 A

35 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.028 ohm

40 A

DUAL

R-PDSO-F5

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

DMTH10H009SPSQ-13

Diodes Incorporated

MATTE TIN

e3

260

DMT6012LSS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.84 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

65 A

37.5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.011 ohm

10.4 A

DUAL

R-PDSO-G8

1

e4

30

260

27.5 pF

MIL-STD-202

ZXMN2A02N8TC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

10.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.02 ohm

8.3 A

DUAL

R-PDSO-G8

Not Qualified

260

DMNH6065SSDQ-13

Diodes Incorporated

MATTE TIN

e3

260

DMNH6009SPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.3 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

380 A

226 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0073 ohm

95 A

DUAL

R-PDSO-F8

DRAIN

e3

260

111 pF

MIL-STD-202

ZXMN3B04N8TC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.025 ohm

7.2 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

DMN1002UCA6-7

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.47 W

UNSPECIFIED

SWITCHING

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4787 ns

-55 Cel

10255 ns

NICKEL PALLADIUM GOLD

BOTTOM

R-XBCC-N6

SOURCE

ESD PROTECTED

e4

260

297 pF

ZXMN3AMCTA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.45 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

13 A

2.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.12 ohm

2.9 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

HIGH RELIABILITY

e4

30

260

DMTH32M5LPS-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMTH3004LFGQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

250 A

110 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0055 ohm

75 A

DUAL

S-PDSO-N8

3

DRAIN

HIGH RELIABILITY

e3

260

240 pF

AEC-Q101; MIL-STD-202

DMP3160L

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.122 ohm

2.7 A

DUAL

R-PDSO-G3

LOW THRESHOLD, HIGH RELIABILITY

DMNH6069SFVWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

72 A

7.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.05 ohm

5 A

DUAL

S-PDSO-F8

DRAIN

e3

260

28 pF

AEC-Q101; IATF 16949; MIL-STD-202

ZXMN6A08GTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.08 ohm

3.8 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

TO-261AA

e3

260

DMTH10H005LCT

Diodes Incorporated

MATTE TIN

e3

30

260

ZXMN20B28KTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10.2 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17.3 A

73 mJ

2.3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.78 ohm

1.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

HIGH RELIABILITY

TO-252AA

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.