Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

DMTH15H017SPSWQ-13

Diodes Incorporated

DMN3020UFDFQ-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMTH47M2LFVW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37.5 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

196 A

28.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0089 ohm

49 A

DUAL

S-PDSO-F8

DRAIN

e3

19.5 pF

MIL-STD-202

DMC3032LFDB-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

DMP3011SPSW-13

Diodes Incorporated

MATTE TIN

e3

DMC3032LFDB-13

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

DMTH47M2LFVWQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37.5 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

196 A

28.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0089 ohm

49 A

DUAL

S-PDSO-F8

DRAIN

HIGH RELIABILITY

e3

19.5 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH15H017SPSW-13

Diodes Incorporated

DMTH12H007SK3-13

Diodes Incorporated

MATTE TIN

e3

DMN3020UFDFQ-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMTH47M2LFVWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37.5 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

196 A

28.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0089 ohm

49 A

DUAL

S-PDSO-F8

DRAIN

HIGH RELIABILITY

e3

19.5 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH12H007SPSW-13

Diodes Incorporated

MATTE TIN

e3

DMTH47M2LFVW-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37.5 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

196 A

28.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0089 ohm

49 A

DUAL

S-PDSO-F8

DRAIN

e3

19.5 pF

MIL-STD-202

DMP3021SPSW-13

Diodes Incorporated

MATTE TIN

e3

DMN3061S-13

Diodes Incorporated

MATTE TIN

e3

DMN39M1LK3-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

357 A

84 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0055 ohm

89.3 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

e3

230 pF

MIL-STD-202

DMTH45M5LPDW-13

Diodes Incorporated

MATTE TIN

e3

DMN3061S-7

Diodes Incorporated

MATTE TIN

e3

DMP3007LK3Q-13

Diodes Incorporated

MATTE TIN

e3

DMN2055UQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.038 ohm

4.8 A

DUAL

R-PDSO-G3

e3

37 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMN2055UQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

25 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.038 ohm

4.8 A

DUAL

R-PDSO-G3

e3

37 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH45M5SPDWQ-13

Diodes Incorporated

DMTH45M5SPDW-13

Diodes Incorporated

DMTH45M5LPDWQ-13

Diodes Incorporated

Matte Tin (Sn) - annealed

1

e3

DMP3011SPDW-13

Diodes Incorporated

MATTE TIN

e3

DMTH10H032SPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

25.3 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.032 ohm

25 A

DUAL

R-PDSO-F8

1

DRAIN

e3

6 pF

MIL-STD-202

DMP4015SPSWQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

242 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.015 ohm

8.5 A

DUAL

R-PDSO-F8

1

DRAIN

e3

526 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH10H4M5LPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

428 A

240 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0049 ohm

107 A

DUAL

R-PDSO-F8

1

DRAIN

e3

25.5 pF

MIL-STD-202

DMTH10H4M5LPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

428 A

240 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0049 ohm

107 A

DUAL

R-PDSO-F8

1

DRAIN

e3

25.5 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH12H007SPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

336 A

360.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0089 ohm

84 A

DUAL

R-PDSO-F8

1

DRAIN

e3

29 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMN24H3D6S-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.06 W

PLASTIC/EPOXY

SWITCHING

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

3.5 ohm

.45 A

DUAL

R-PDSO-G3

e3

8 pF

MIL-STD-202

DMPH16M1UPSW-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.47 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

147 A

54 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.006 ohm

96 A

DUAL

R-PDSO-F8

1

DRAIN

e3

564 pF

MIL-STD-202

DMTH10H025LPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

90 A

96 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.023 ohm

45 A

DUAL

R-PDSO-F8

DRAIN

e3

20 pF

MIL-STD-202

DMN3060LCA3-7A

Diodes Incorporated

NICKEL PALLADIUM GOLD

1

e4

DMN24H3D6S-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.06 W

PLASTIC/EPOXY

SWITCHING

240 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

3.5 ohm

.45 A

DUAL

R-PDSO-G3

e3

8 pF

MIL-STD-202

DMN3732UFB4-7B

Diodes Incorporated

Nickel/Palladium/Gold (Ni/Pd/Au)

1

e4

DMN1021UCA4-7

Diodes Incorporated

Nickel/Gold (Ni/Au)

1

e4

DMTH45M5SPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

72 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

344 A

20.6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0055 ohm

86 A

DUAL

R-PDSO-F8

1

DRAIN

e3

21 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH45M5LPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

72 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

344 A

18.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0055 ohm

86 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30 pF

MIL-STD-202

DMTH15H017LPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

SWITCHING

150 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

315.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0255 ohm

50 A

DUAL

R-PDSO-F8

1

DRAIN

e3

6.7 pF

MIL-STD-202

DMTH45M5SPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

72 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

344 A

20.6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0055 ohm

86 A

DUAL

R-PDSO-F8

1

DRAIN

e3

21 pF

MIL-STD-202

DMTH45M5LPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

72 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

344 A

18.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0055 ohm

86 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH6010LPDWQ-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

37.5 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

90 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.016 ohm

47.6 A

DUAL

R-PDSO-F8

DRAIN

58 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH10H032LPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

132 A

25.3 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.032 ohm

33 A

DUAL

R-PDSO-F8

DRAIN

6.9 pF

MIL-STD-202

DMTH6010LPDW-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

37.5 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

90 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.016 ohm

47.6 A

DUAL

R-PDSO-F8

DRAIN

58 pF

MIL-STD-202

DMN3061SQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.23 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.059 ohm

2.3 A

DUAL

R-PDSO-G3

31 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMN3061SQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.23 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.059 ohm

2.3 A

DUAL

R-PDSO-G3

31 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH10H032LPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

132 A

25.3 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.032 ohm

33 A

DUAL

R-PDSO-F8

DRAIN

6.9 pF

AEC-Q101; IATF 16949; MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.