Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
98 mJ |
16.2 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.004 ohm |
16.2 A |
DUAL |
R-PDSO-G8 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
966 pF |
AEC-Q101 |
|||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
4.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
48 A |
22 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0065 ohm |
14.5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
TO-252 |
e3 |
30 |
260 |
|||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.4 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
244 A |
176 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.015 ohm |
11 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
260 |
229 pF |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
87 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.007 ohm |
14 A |
DUAL |
R-PDSO-G8 |
3 |
e3 |
30 |
260 |
305 pF |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
65 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.8 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
8 ohm |
.215 A |
BOTTOM |
R-PBCC-N3 |
DRAIN |
e4 |
260 |
6 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
14 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
8 mJ |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.25 ohm |
6.1 A |
DUAL |
R-PDSO-G4 |
DRAIN |
e3 |
260 |
19.1 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.3 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
277 A |
260 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.013 ohm |
69 A |
DUAL |
R-PDSO-F8 |
DRAIN |
e3 |
260 |
403 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.45 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
13 A |
3.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.12 ohm |
2.9 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
e4 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9.4 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.35 ohm |
1.7 A |
DUAL |
R-PDSO-G4 |
DRAIN |
e3 |
260 |
29.8 pF |
AEC-Q101; MIL-STD-202 |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
820 A |
662 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0033 ohm |
205 A |
DUAL |
R-PDSO-F8 |
DRAIN |
e3 |
260 |
179 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
35 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.024 ohm |
7 A |
DUAL |
R-PDSO-G6 |
e3 |
260 |
38 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.44 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
36 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.028 ohm |
5.8 A |
DUAL |
R-PDSO-G6 |
e3 |
260 |
79 pF |
MIL-STD-202 |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
55 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0055 ohm |
16 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
30 |
260 |
248 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
140 A |
32 mJ |
35 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.018 ohm |
35 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
260 |
126 pF |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.08 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
20 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.06 ohm |
3.4 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
260 |
29 pF |
MIL-STD-202 |
|||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
1 |
e3 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.21 W |
PLASTIC/EPOXY |
SWITCHING |
65 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.8 A |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
8 ohm |
.192 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
e4 |
30 |
260 |
2.1 pF |
MIL-STD-202 |
|||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
1 |
e3 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
10.3 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.011 ohm |
9.3 A |
DUAL |
R-PDSO-G8 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
36.6 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
209 A |
30.5 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0089 ohm |
52.4 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
260 |
12.4 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
98 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.006 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
HIGH RELIABILITY |
TO-220AB |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
113 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
200 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.00365 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
260 |
105 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
1 |
e3 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
1 |
e3 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
6.7 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.017 ohm |
10.3 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.16 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
70 A |
86 mJ |
13 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0117 ohm |
13 A |
DUAL |
R-PDSO-F5 |
SOURCE |
ESD PROTECTED |
e3 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
500 A |
175 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0025 ohm |
27 A |
DUAL |
S-PDSO-N5 |
DRAIN |
e3 |
260 |
538 pF |
|||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.045 ohm |
4 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
42 pF |
|||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
1 |
e3 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.45 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
13 A |
3.7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.12 ohm |
2.9 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
e4 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
Matte Tin (Sn) |
1 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
24 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.03 ohm |
6 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
108 pF |
AEC-Q101 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.25 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
176 A |
104 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.01 ohm |
50 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
260 |
296 pF |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
55 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.0055 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
HIGH RELIABILITY |
TO-252 |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.