Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
65 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.065 ohm |
25 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
HIGH RELIABILITY |
TO-252 |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
Diodes Incorporated |
NICKEL PALLADIUM GOLD |
1 |
e4 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.8 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
12 ohm |
.25 A |
DUAL |
R-PDSO-G4 |
DRAIN |
Not Qualified |
||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
36.6 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
209 A |
30.5 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0089 ohm |
52.4 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
260 |
12.4 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
5.8 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.057 ohm |
5.8 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
35 A |
4.8 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD |
.025 ohm |
6.9 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
HIGH RELIABILITY |
e4 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
64 A |
16 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.009 ohm |
16 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
3 |
e3 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
40 A |
6.8 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.036 ohm |
6.8 A |
DUAL |
R-PDSO-N8 |
1 |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
36.6 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
209 A |
30.5 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0089 ohm |
52.4 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
260 |
12.4 pF |
AEC-Q101; MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
140 A |
194 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.008 ohm |
16.5 A |
DUAL |
R-PDSO-F5 |
DRAIN |
HIGH RELIABILITY |
e3 |
AEC-Q101 |
||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
166.8 A |
23.4 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.025 ohm |
41.7 A |
DUAL |
R-PDSO-F8 |
DRAIN |
32 pF |
MIL-STD-202 |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
17 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.125 ohm |
2.9 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
FAST SWITCHING |
TO-261AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
66 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.02 ohm |
12 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
2.67 W |
UNSPECIFIED |
SWITCHING |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
BOTTOM |
R-XBCC-N6 |
ESD PROTECTED |
e4 |
260 |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.2 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.2 ohm |
2.6 A |
DUAL |
R-PDSO-G6 |
e3 |
260 |
25 pF |
AEC-Q101; MIL-STD-202 |
||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
64 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.02 ohm |
7.2 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
260 |
168 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
187.5 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
440 mJ |
100 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.09 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.001 ohm |
100 A |
DUAL |
R-PDSO-F5 |
DRAIN |
e3 |
260 |
203 pF |
|||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
115 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
316 A |
202 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.019 ohm |
79 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-252 |
e3 |
260 |
416 pF |
AEC-Q101; IATF 16949 |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.33 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
21 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.098 ohm |
3.6 A |
DUAL |
R-PDSO-G3 |
e3 |
260 |
42 pF |
|||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
98 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.0056 ohm |
90 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
HIGH RELIABILITY |
TO-252 |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28 A |
7.1 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.03 ohm |
7.1 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
87 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.0036 ohm |
17.6 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
HIGH RELIABILITY |
TO-252 |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
35 A |
65 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.05 ohm |
5.3 A |
DUAL |
R-PDSO-G8 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
400 A |
171 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0041 ohm |
100 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
260 |
69 pF |
MIL-STD-202 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
25 A |
10 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.03 ohm |
6.2 A |
DUAL |
S-PDSO-N6 |
DRAIN |
HIGH RELIABILITY |
e4 |
260 |
44 pF |
AEC-Q101 |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
110 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.004 ohm |
26 A |
DUAL |
R-PDSO-F5 |
DRAIN |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
12.5 W |
PLASTIC/EPOXY |
SWITCHING |
450 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.2 A |
30 mJ |
.6 A |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
21 ohm |
.6 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
e3 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
13.6 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.125 ohm |
2.3 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
LOW THRESHOLD |
e3 |
30 |
260 |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
57.7 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
180 A |
19.6 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0137 ohm |
49.8 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
260 |
21 pF |
MIL-STD-202 |
||||||||||||||||||||
Diodes Incorporated |
P-CHANNEL |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.576 ohm |
2.1 A |
DUAL |
R-PDSO-G4 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
312 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0035 ohm |
150 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252 |
e3 |
260 |
188 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.2 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.2 ohm |
2.6 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
260 |
25 pF |
MIL-STD-202 |
|||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
YES |
2.16 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
80 A |
28 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
2.16 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0177 ohm |
9.5 A |
DUAL |
S-PDSO-N8 |
1 |
SOURCE |
e3 |
260 |
16 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65.2 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
400 A |
165 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.003 ohm |
100 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
260 |
88 pF |
MIL-STD-202 |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.27 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
130 A |
58.4 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0087 ohm |
18 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
260 |
477 pF |
AEC-Q101; MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.55 ohm |
2.6 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
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|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
11.1 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.125 ohm |
2.3 A |
DUAL |
R-PDSO-G8 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
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Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.07 ohm |
5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.