Diodes Incorporated - DMN3013LDG-13

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DMN3013LDG-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN3013LDG-13
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Package Style (Meter): SMALL OUTLINE; Maximum Feedback Capacitance (Crss): 16 pF;
Datasheet DMN3013LDG-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.5 A
Maximum Pulsed Drain Current (IDM): 80 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.16 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 2.16 W
Maximum Drain-Source On Resistance: .0177 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 28 mJ
Maximum Feedback Capacitance (Crss): 16 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Reference Standard: MIL-STD-202
Peak Reflow Temperature (C): 260
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