Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

DMN6069SFVW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

56 A

7.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.069 ohm

4 A

DUAL

S-PDSO-F8

DRAIN

e3

260

28 pF

MIL-STD-202

DMTH8028LFVWQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.5 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

108 A

23.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.025 ohm

27 A

DUAL

S-PDSO-F8

DRAIN

e3

260

19.5 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMT67M8LSS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

84.5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0066 ohm

12 A

DUAL

R-PDSO-G8

e3

260

70 pF

MIL-STD-202

DMTH4014LPSW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

46.9 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

170 A

19.6 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0145 ohm

43.5 A

DUAL

R-PDSO-F8

DRAIN

e3

260

21 pF

MIL-STD-202

ZXMN3A04DN8TA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.81 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

39 A

6.5 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.02 ohm

6.5 A

DUAL

R-PDSO-G8

1

Not Qualified

MS-012AA

e3

260

218 pF

BSS126SK-13

Diodes Incorporated

MATTE TIN

e3

260

DMNH4004SPS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

536 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.006 ohm

100 A

DUAL

R-PDSO-F8

1

DRAIN

e3

260

171 pF

DMN3013LFG-13

Diodes Incorporated

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

YES

2.16 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

80 A

28 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.16 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.0177 ohm

9.5 A

DUAL

S-PDSO-N8

1

SOURCE

e3

260

16 pF

MIL-STD-202

DMT67M8LK3-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

345 A

84.5 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.007 ohm

87 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

e3

260

70 pF

IATF 16949; MIL-STD-202

DMTH3004LK3-13

Diodes Incorporated

MATTE TIN

e3

260

DMNH10H028SK3Q-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

58 A

43 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.028 ohm

55 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH RELIABILITY

TO-252

e3

260

AEC-Q101

ZXMN4A06GTC

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

7 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.05 ohm

5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

61 pF

BSP120TA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

12 ohm

.25 A

DUAL

R-PDSO-G4

DRAIN

Not Qualified

DMTH43M8LPSQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

350 A

87 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

21 ns

-55 Cel

68 ns

MATTE TIN

.0033 ohm

100 A

DUAL

R-PDSO-F8

1

DRAIN

HIGH RELIABILITY

e3

30

260

104 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMP1011LFVQ-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.16 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

70 A

86 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0117 ohm

19 A

DUAL

R-PDSO-F8

SOURCE

e3

260

53 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMHC3025LSDQ-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMT64M1LCG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.6 W

PLASTIC/EPOXY

SWITCHING

65 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

260 A

206 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0054 ohm

67.8 A

DUAL

S-PDSO-N8

1

DRAIN

e4

30

260

91 pF

DMC3025LNS-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

2

45 A

9.8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.035 ohm

7.2 A

DUAL

S-PDSO-F8

1

e3

30

260

57 pF

MIL-STD-202

ZXMP6A18DN8QTA

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

23 A

38.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.055 ohm

3.7 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMTH6004SCTBQ-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMTH8008SFGQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

272 A

174.85 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.007 ohm

68 A

DUAL

S-PDSO-N8

1

DRAIN

e3

30

260

45.8 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMT6008LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

41 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

80 A

25 mJ

60 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0075 ohm

13 A

DUAL

S-PDSO-N5

1

DRAIN

e3

30

260

57 pF

DMN2022UNS-13

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.9 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

SQUARE

ENHANCEMENT MODE

2

60 A

14.7 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.017 ohm

10.7 A

DUAL

S-PDSO-F8

e3

260

160 pF

MIL-STD-202

DMT6011LSS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

85 A

39.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

10.6 A

DUAL

R-PDSO-G8

e3

260

38 pF

DMTH3004LPSQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

180 A

110 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0038 ohm

22 A

DUAL

R-PDSO-F5

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

ZXMP6A17GQTC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13.7 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

MATTE TIN

.125 ohm

3 A

DUAL

R-PDSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMTH4002SCTBQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

166.7 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

760 A

551.8 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.003 ohm

192 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

e3

260

17 pF

AEC-Q101; IATF 16949

DMTH8012LK3-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

147 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.016 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

HIGH RELIABILITY

TO-252

e3

260

AEC-Q101

DMTH4007SPD-13

Diodes Incorporated

MATTE TIN

e3

260

DMNH6021SPDW-13

Diodes Incorporated

MATTE TIN

3

e3

DMTH4014SPSWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

46.9 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

170 A

19.4 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0148 ohm

43.5 A

DUAL

R-PDSO-F8

DRAIN

e3

260

15 pF

AEC-Q101; IATF 16949; MIL-STD-202

ZVP2106ZTA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5 ohm

.39 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

DMTH4005SCT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

52.8 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0047 ohm

100 A

SINGLE

R-PSFM-T3

HIGH RELIABILITY

TO-220AB

e3

260

AEC-Q101

ZXMP10A17E6QTAR

Diodes Incorporated

MATTE TIN

1

e3

260

DMTH10H030LK3-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

85 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.045 ohm

28 A

SINGLE

R-PSSO-G2

DRAIN

HIGH RELIABILITY

TO-252

e3

260

AEC-Q101

DMN2053UFDBQ-7

Diodes Incorporated

NICKEL PALLADIUM GOLD

e4

260

DMNH6008SCT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

190 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.008 ohm

130 A

SINGLE

R-PSFM-T3

HIGH RELIABILITY

TO-220AB

e3

260

AEC-Q101

DMTH15H017SPS-13

Diodes Incorporated

MATTE TIN

e3

260

DMP3017SFGQ-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

80 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.5 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.01 ohm

11.5 A

DUAL

S-PDSO-N5

DRAIN

GATE PROTECTED

e3

260

294 pF

AEC-Q101

DMTH4005SK3Q-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

150 A

52.8 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0045 ohm

95 A

SINGLE

R-PSSO-G2

DRAIN

HIGH RELIABILITY

TO-252

e3

260

AEC-Q101

DMN3022LDG-7

Diodes Incorporated

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

YES

1.96 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

50 A

28 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.96 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.022 ohm

7.6 A

DUAL

S-PDSO-N8

1

SOURCE

e3

260

10.6 pF

MIL-STD-202

ZVP2120ZTA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

25 ohm

.17 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

ZXMP6A13GTC

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.9 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.8 A

2.3 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.39 ohm

2.3 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

260

DMNH6069SFVW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

72 A

7.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.05 ohm

5 A

DUAL

S-PDSO-N8

DRAIN

e3

260

28 pF

DMN6070SSDQ-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

12 A

5 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.087 ohm

2.7 A

DUAL

R-PDSO-G8

e3

260

20 pF

AEC-Q101; MIL-STD-202

DMTH62M8SPS-13

Diodes Incorporated

MATTE TIN

1

e3

260

DMN6069SFVWQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

56 A

7.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.069 ohm

4 A

DUAL

S-PDSO-F8

DRAIN

e3

260

28 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMTH6016LK3-13

Diodes Incorporated

MATTE TIN

1

e3

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.