Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

LV14N03

Diodes Incorporated

LV35C03

Diodes Incorporated

LTV3C10

Diodes Incorporated

LCC110P02

Diodes Incorporated

S2U350N70

Diodes Incorporated

3

LCC75P02

Diodes Incorporated

LTCP3N10

Diodes Incorporated

LTD35N06

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LV14N03K

Diodes Incorporated

LTD24N10

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LZPF2N60

Diodes Incorporated

N-CHANNEL

SINGLE

NO

23 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

LCS72P02

Diodes Incorporated

LV40P03

Diodes Incorporated

S2PF200N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTV8N04

Diodes Incorporated

LV20T03

Diodes Incorporated

LV18N03A

Diodes Incorporated

LTPF81N08

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LV10P03

Diodes Incorporated

S2PF900N65

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

G1V4D7N06

Diodes Incorporated

3

LTV11N06

Diodes Incorporated

LD5D2N03A

Diodes Incorporated

LTM5853

Diodes Incorporated

LCS33P02

Diodes Incorporated

S2P750N70

Diodes Incorporated

LCS70P03

Diodes Incorporated

LTP85N06

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTD61P06

Diodes Incorporated

LTP124N10

Diodes Incorporated

LTD18P06

Diodes Incorporated

LV10P03K

Diodes Incorporated

LTP105N06A

Diodes Incorporated

LTD19N10

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LTP40N10

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

172 A

400 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.025 ohm

43 A

SINGLE

R-PSFM-T3

TO-220AB

LV5D5N03AK

Diodes Incorporated

LTD15N10

Diodes Incorporated

NOT SPECIFIED

NOT SPECIFIED

LCS75P03

Diodes Incorporated

S2P350N70

Diodes Incorporated

LD3D2N03

Diodes Incorporated

LTV13P04K

Diodes Incorporated

LCC70P03

Diodes Incorporated

LCS80P03

Diodes Incorporated

LTP93N08A

Diodes Incorporated

LNP6D5N03

Diodes Incorporated

LTV17P04

Diodes Incorporated

LTP22P06

Diodes Incorporated

LV12C03S

Diodes Incorporated

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.