Diodes Incorporated Power Field Effect Transistors (FET) 1,827

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMG7N65SCT	Diodes Incorporated																									MATTE TIN										e3		260
DMT3008LFDF-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	70 A	3.2 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.01 ohm	10.4 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	53 pF	MIL-STD-202
DMT2004UFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	24 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	36 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	70 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	559 pF	MIL-STD-202
DMP2110UVTQ-7	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.01 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	15 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.15 ohm	1.8 A	DUAL	R-PDSO-G6						e3		260	47 pF	AEC-Q101; IATF 16949; MIL-STD-202
ZVNL120GTC	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	10 ohm	.32 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
AF15N50DNPTR-G1	Diodes Incorporated																																				30	260
DMG3N60SJ3	Diodes Incorporated																									MATTE TIN										e3		260
DMP2006UFG-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	28 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	55 ns	-55 Cel	370 ns	MATTE TIN	.0055 ohm	17.5 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260	900 pF
DMT3006LFVQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	29 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.007 ohm	60 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	72 pF	AEC-Q101; MIL-STD-202
DMJ70H601SV3	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	86 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.6 ohm	8 A	SINGLE	R-PSIP-T3					TO-251	e3		260
UZVP2110G	Diodes Incorporated	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn)	8 ohm	.31 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	40	260
AF9945NS	Diodes Incorporated	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		3.5 A								e0
DMT8012LSS-13	Diodes Incorporated																									MATTE TIN										e3		260
UZVN4206GTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					1.5 ohm	1 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	FAST SWITCHING			NOT SPECIFIED	NOT SPECIFIED
DMT3006LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	27.8 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	31 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	55.6 A	DUAL	S-PDSO-N5	1	DRAIN				e3	30	260	72 pF	MIL-STD-202
AF4910NSL	Diodes Incorporated	N-CHANNEL		YES	2.1 W						ENHANCEMENT MODE				10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A										260
UZXMP6A13GTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.8 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.39 ohm	2.3 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	40	260
HTMN5130SSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8 A	89 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.13 ohm	2.6 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
DMN4030LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.9 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37.7 A		13.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	9.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
DMT8008LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	380 A	26.5 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.007 ohm	95 A	SINGLE	R-PSSO-G2		DRAIN			TO-252	e3		260	52 pF
DMT3006LPB-13	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	30 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	100 A	28 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0111 ohm	50 A	DUAL	R-PDSO-F8	3	DRAIN				e3			72 pF	MIL-STD-202
DMP26M7UFG-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	28 mJ	18 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0067 ohm	18 A	DUAL	S-PDSO-F5						e3		260	728 pF
AF1332NUL	Diodes Incorporated	N-CHANNEL	SINGLE	YES	.35 W						ENHANCEMENT MODE	1			.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.6 A									30	260
S2D420N65R	Diodes Incorporated																																				NOT SPECIFIED	NOT SPECIFIED
DMT4031LFDF-7	Diodes Incorporated																									NICKEL PALLADIUM GOLD					1					e4	30	260
DMT10H025SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	12.9 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	31.25 mJ	7.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.023 ohm	7.4 A	DUAL	R-PDSO-G8						e3		260	20.4 pF
DMC1017UPD-13	Diodes Incorporated																									MATTE TIN										e3		260
UZVN4206G	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				Matte Tin (Sn)	1.5 ohm	1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3	40	260
AF9575PS	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON		-55 Cel			.09 ohm	4 A	DUAL	R-PDSO-G8
DMT3006LFDFQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	31 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.007 ohm	14.1 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	72 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMT10H015LSS-13	Diodes Incorporated																									MATTE TIN										e3		260
ZVN4206GVTC	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					1 ohm	1 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified	FAST SWITCHING			NOT SPECIFIED	NOT SPECIFIED
UZVN4306G	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.45 ohm	2.1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3
DMT15H017SK3-13	Diodes Incorporated																									MATTE TIN					1					e3		260
DT3055L	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		3.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.1 ohm	3.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
DMT10H025SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	2.8 mJ	41.2 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.03 ohm	41.2 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3	30	260		AEC-Q101
S2P380N65R	Diodes Incorporated																																				NOT SPECIFIED	NOT SPECIFIED
AF9410NSLA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	3.1 W						ENHANCEMENT MODE	1			8.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8.1 A										260
DMT10H015LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	85 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.018 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3				AEC-Q101
DMG8880LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.43 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		11.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.01 ohm	11.6 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMJ70H1D0SV3	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	7.5 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	1 ohm	6 A	SINGLE	R-PSIP-T3					TO-251	e3	30	260
DMC2025UFDBQ-7	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	20 A	8.5 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.035 ohm	6 A	DUAL	R-PDSO-N6		DRAIN				e4		260	77 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMT10H015SPS-13	Diodes Incorporated																									MATTE TIN					1					e3		260
AF2302NW	Diodes Incorporated	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			2.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		2.4 A								e0
DMT10H003SPSW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	139 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	608 A	612 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.003 ohm	152 A	DUAL	R-PDSO-F8		DRAIN				e3		260	34 pF
DMG10N60SCT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	178 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	550 mJ	12 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.75 ohm	12 A	SINGLE	R-PSFM-T3				ESD PROTECTED	TO-220AB	e3		260
UZVN4306GV	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.33 ohm	2.1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	40	260
ZXMHC6A07T8TC	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	4	8.7 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.3 ohm	1.8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.