Fairchild Semiconductor Power Field Effect Transistors (FET) 292

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NDT3055_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A		4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.1 ohm	4 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NDT456P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		7.5 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.03 ohm	7.5 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FDS2572_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.053 ohm	4.9 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3
FQD2N60CTM_WS	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.6 A	120 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				Matte Tin (Sn)	4.7 ohm	1.9 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252	e3	30	260
FDS2582_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		252 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.066 ohm	4.1 A	DUAL	R-PDSO-G8			Not Qualified			e3
FDT439N_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		6.3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.045 ohm	6.3 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
FDS6890A_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		7.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.034 ohm	7.5 A	DUAL	R-PDSO-G8			Not Qualified	FAST SWITCHING		e3
IRFP250N	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	214 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		315 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.075 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247	e0
FQP13N50C	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	195 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	860 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.48 ohm	13 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
FDD86367_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	227 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		82 mJ	100 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	104 ns	-55 Cel	80 ns	Matte Tin (Sn) - annealed	.0042 ohm		SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260		AEC-Q101
FDS9926A_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.03 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FQP13N50C_F105	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	195 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	860 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.48 ohm	13 A	SINGLE	R-PSFM-T3					TO-220AB	e3
FDD6685_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.02 ohm	11 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252	e3
IRF540N_R4942	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	120 W						ENHANCEMENT MODE	1			33 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					Tin/Lead (Sn/Pb)		33 A								e0
FDBL86210_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	500 W							1			169 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							169 A			1							245
FDS8958A_NL	Fairchild Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	54 mJ	7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.028 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified			e3
FDS8958A_NF073	Fairchild Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	54 mJ	7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.028 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
FDP075N15A_F102	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	333 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	522 A	588 mJ	130 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0075 ohm	120 A	SINGLE	R-PSFM-T3				ULTRA-LOW RESISTANCE	TO-220AB	e3
FDC2612_F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			1.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							1.1 A
FDT458P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.4 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.13 ohm	3.4 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BUZ11_NR4941	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.04 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB	e3
FDN5632N_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.1 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR		1			1.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		1.7 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
NDS9948_NL	Fairchild Semiconductor	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A	15 mJ	2.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.25 ohm	2.3 A	DUAL	R-PDSO-G8			Not Qualified			e3
FQD4P25TM_WS	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A	280 mJ	3.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	2.1 ohm	3.1 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260
FQA24N50F	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	290 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	96 A	1100 mJ	24 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.2 ohm	24 A	SINGLE	R-PSFM-T3			Not Qualified			e3
FDA20N50_F109	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	280 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	88 A	1110 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.23 ohm	22 A	SINGLE	R-PSFM-T3			Not Qualified	FAST SWITCHING		e3
FDB075N15A_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		502 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON				MATTE TIN	.0075 ohm	110 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	260		AEC-Q101
FQA9N90C_F109	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	280 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	900 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.4 ohm	9 A	SINGLE	R-PSFM-T3			Not Qualified			e3
FDB3652_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	150 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		182 mJ	61 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.016 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	260
FDP150N10A-F102	Fairchild Semiconductor	N-CHANNEL	SINGLE	NO	91 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					Matte Tin (Sn)		50 A								e3
FDFS2P106A_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.11 ohm	3 A	DUAL	R-PDSO-G8			Not Qualified			e3
FCPF190N60E_F152	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	61.8 A	400 mJ	20.6 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.19 ohm	20.6 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
FDH45N50F_F133	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	625 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	1868 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.12 ohm	45 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD	e3
FCH067N65S3_F155	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	312 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	1160 mJ	44 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.067 ohm	44 A	SINGLE	R-PSFM-T3					TO-247AB	e3	NOT SPECIFIED	NOT SPECIFIED
FDD8447L_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		40 mJ	50 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0085 ohm		SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FDD2572_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	135 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		36 mJ	29 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.054 ohm	4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FDS8896_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		196 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.006 ohm	15 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
FCH041N60F_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	595 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		2025 mJ	76 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	242 ns	-55 Cel	514 ns		.041 ohm	76 A	SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
FDS4080N3	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.9 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	200 mJ	13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				NICKEL PALLADIUM GOLD	.0105 ohm	13 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified			e4
SSP70N10A	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	188 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	220 A	1613 mJ	55 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin/Lead (Sn/Pb)	.023 ohm	55 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0
FDS6375_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	39 ns	-55 Cel	289 ns	MATTE TIN	.024 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3			229 pF
FDD24AN06LA0_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		32 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.019 ohm	7.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260		AEC-Q101
FDWS86368_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	214 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		82 mJ	80 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	60 ns	-55 Cel	59 ns	Matte Tin (Sn) - annealed	.0045 ohm	80 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260	20 pF	AEC-Q101
2N7002TR	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	.2 W						ENHANCEMENT MODE	1			.115 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn85Pb15)		.115 A			1					e0
FDD120AN15A0_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		122 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.12 ohm	14 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260		AEC-Q101
RFP4N100	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	17 A		4.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	3.5 ohm	4.3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
HUFA76429D3ST_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	110 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.029 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260
SFR9014TF	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	24 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	72 mJ	5.3 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.5 ohm	5.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.