IXYS Corporation Power Field Effect Transistors (FET) 39

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTA3N120HV-TRL

IXYS Corporation

Matte Tin (Sn)

1

e3

10

260

IXTA3N150HV-TRL

IXYS Corporation

Matte Tin (Sn)

1

e3

10

260

IXTA3N120-TRR

IXYS Corporation

Matte Tin (Sn)

1

e3

10

260

IXTA120P065T-TRL

IXYS Corporation

Matte Tin (Sn)

1

e3

10

260

IXTT140N075L2HV-TR

IXYS Corporation

IXFN80N50

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

700 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

320 A

6000 mJ

80 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL

.055 ohm

80 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXTA3N50D2-TRL

IXYS Corporation

Matte Tin (Sn)

1

e3

10

260

VMM1500-0075P

IXYS Corporation

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

NO

UNSPECIFIED

SWITCHING

75 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0008 ohm

1500 A

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFH28N50Q

IXYS Corporation

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

1500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

28 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AD

e3

IXFT28N50F

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

315 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

112 A

1500 mJ

28 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.19 ohm

28 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

IXTT1N250HV-TRL

IXYS Corporation

MKE38P600LB-TUB

IXYS Corporation

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1950 mJ

9

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.045 ohm

50 A

DUAL

R-PDSO-G9

ISOLATED

HIGH RELIABILITY

UL RECOGNIZED

IXFH12N50F

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

300 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

IXTY01N80

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

50 ohm

.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

10

260

IXTY1R6N50P

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

75 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6.5 ohm

1.6 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-252AA

e3

10

260

IXTA1R4N120P-TRL

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

86 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

13 ohm

1.4 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AB

e3

10

260

7.6 pF

IXFR24N50Q

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

1500 mJ

22 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

22 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXTN21N100

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

84 A

21 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

520 W

150 Cel

SILICON

.55 ohm

21 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

VMM1000-01P

IXYS Corporation

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

NO

UNSPECIFIED

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

7

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0012 ohm

1000 A

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

IXTA80N075L2-TRL

IXYS Corporation

Matte Tin (Sn)

1

e3

10

260

IXFK24N100F

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

3000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0039 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

NOT SPECIFIED

NOT SPECIFIED

IXTA02N250HV-TRL

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

2500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

.2 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

450 ohm

.2 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

10

260

3 pF

IXTT110N10L2-TRL

IXYS Corporation

IXFN48N50U2

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

192 A

48 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.1 ohm

48 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXTN79N20

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

340 A

79 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

400 W

150 Cel

SILICON

NICKEL

.025 ohm

79 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

VMM1500-0075X2

IXYS Corporation

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

75 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

1560 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.00038 ohm

1560 A

UNSPECIFIED

R-XXFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

VWM270-0075X2

IXYS Corporation

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

75 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

6

270 A

17

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0021 ohm

270 A

UPPER

R-XUFM-X17

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXTA140P05T-TRL

IXYS Corporation

IXFA230N075T2-TRL

IXYS Corporation

Matte Tin (Sn)

1

e3

10

260

IXFE80N50

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

580 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

320 A

6000 mJ

72 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.055 ohm

72 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFH32N50Q

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

128 A

1500 mJ

32 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.16 ohm

32 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

IXFK55N50

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

560 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

55 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.09 ohm

55 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

NOT SPECIFIED

NOT SPECIFIED

IXTA64N10L2-TRL

IXYS Corporation

Matte Tin (Sn)

1

e3

10

260

IXTH75N10

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

MATTE TIN

.02 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AD

e3

IXTM10N100

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

METAL

SWITCHING

1000 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

40 A

10 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

300 W

150 Cel

SILICON

1.2 ohm

10 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

IXTP110N055P

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0135 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXTQ88N28T

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

PLASTIC/EPOXY

280 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

250 A

88 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.044 ohm

88 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

e3

IXTY08N100P-TRL

IXYS Corporation

VWM350-0075P

IXYS Corporation

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

UNSPECIFIED

SWITCHING

75 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

6

24

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0033 ohm

340 A

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.