ROHM Power Field Effect Transistors (FET) 320

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

R6507KND3TL1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

21 A

136 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.665 ohm

7 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

20 pF

R6515KNX-C7G

ROHM

R6524ENJTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

654 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN COPPER

.185 ohm

24 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

e2

R6576ENZ4C13

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

228 A

2115 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.046 ohm

76 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

R8002KND3TL1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

4 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

4.2 ohm

1.6 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

R8005ANJGTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

1.66 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

2.1 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

e2

R8008ANJFRGTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

4.2 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN COPPER

1.03 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

e2

AEC-Q101

RCJ331N25TL

ROHM

NOT SPECIFIED

NOT SPECIFIED

RCX300N20

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

396 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0427 ohm

70 A

SINGLE

R-PSFM-T3

1

ISOLATED

TO-220AB

e1

10

260

RCX511N25

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

204 A

197.9 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.065 ohm

51 A

SINGLE

R-PSFM-T3

1

ISOLATED

TO-220AB

e1

10

260

RD3G01BATTL1

ROHM

RD3H080SPTL1

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.147 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

RD3H200SNTL1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

RD3L03BBGTL1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

21 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0113 ohm

35 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

24 pF

RD3P175SNFRATL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.119 ohm

17.5 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

RD3P200SNTL1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

72 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

RD3S100AAFRATL

ROHM

NOT SPECIFIED

NOT SPECIFIED

RF4C100BCTCR

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

36 A

15.2 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.02 ohm

10 A

DUAL

S-PDSO-N6

1

DRAIN

e3

10

260

RF4E070BNTR1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

28 A

3.5 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

7 A

DUAL

S-PDSO-N6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

RF4E080GNTR

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

32 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0228 ohm

8 A

DUAL

S-PDSO-N6

1

DRAIN

e3

10

260

RF4G060ATTCR

ROHM

RF4L070BGTCR

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

28 A

4 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.04 ohm

7 A

DUAL

S-PDSO-N6

DRAIN

17 pF

RH6G040BGTB1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

59 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

380 A

56 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0036 ohm

40 A

DUAL

R-PDSO-F8

DRAIN

85 pF

RQ3E075ATTB

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

30 A

20 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.033 ohm

7.5 A

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

RQ3E080BNTB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

32 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.022 ohm

8 A

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

RQ3E180BNTB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

72 A

23.3 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0052 ohm

18 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

RQ3G110ATTB

ROHM

TIN

1

e3

10

260

RQ3L050GNTB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

20 A

3.9 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.086 ohm

5 A

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

RQ7E110AJTCR

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

44 A

18 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.009 ohm

11 A

DUAL

R-PDSO-F8

1

e3

10

260

RS1E130GNTB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

52 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0152 ohm

13 A

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

RS1E301GNTB1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

120 A

68 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0033 ohm

30 A

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

RS3E075ATTB

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

4.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.031 ohm

7.5 A

DUAL

R-PDSO-G8

1

10

260

RS6P060BHTB1

ROHM

RSD050N06TL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

15 A

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.14 ohm

5 A

SINGLE

R-PSSO-G2

1

Not Qualified

e2

10

260

RSS095N05FRATB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

38 A

9.5 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.021 ohm

9.5 A

DUAL

R-PDSO-G8

1

e2

10

260

210 pF

AEC-Q101

RSY160P05TL

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

45 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

32 A

16 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

16 A

DUAL

R-PDSO-F3

1

DRAIN

Not Qualified

10

260

RTQ020N03TR

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.194 ohm

2 A

DUAL

R-PDSO-G6

1

Not Qualified

e1

10

260

RTQ040P02TR

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16 A

4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.055 ohm

4 A

DUAL

R-PDSO-G6

1

Not Qualified

e1

10

260

RTQ045N03TR

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

4.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.06 ohm

4.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e1

10

260

RXH125N03TB1

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

12.5 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.014 ohm

12.5 A

DUAL

R-PDSO-G8

e3

SCT3030ARHRC15

ROHM

SCT3080ALHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

134 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

TIN

.104 ohm

30 A

SINGLE

R-PSFM-T3

TO-247

e3

10

265

19 pF

AEC-Q101

SCT3120AW7TL

ROHM

TIN

e3

SCT4018KEC11

ROHM

SCT4036KW7TL

ROHM

SCT4045DRHRC15

ROHM

SCT4045DW7HRTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

750 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

61 A

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

.059 ohm

31 A

SINGLE

R-PSSO-G7

1

DRAIN

30

260

5 pF

AEC-Q101

SH8J31GZETB

ROHM

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

18 A

14 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.085 ohm

4.5 A

DUAL

R-PDSO-G8

1

e3

10

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.